Yusuf Labelechi - Static Cmos
Yusuf Labelechi - Static Cmos
Vin Vout
o.c.
VOL ≥ 0
Cout
VDD
0
VOL
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15
VT0n 3
VOH ≤ VDD → max output voltage when the logic output is “1”
VOL ≥ 0 → min output voltage when the logic output is “0”
VIL → max input voltage that can be interpreted as a logic “0”
VIH → min input voltage that can be interpreted as a logic “1”
VDD
(oC)
Tj = Ta + ΘP (oC)
Θ -> Thermal Resistance (oC/W)
P → Pstatic, Pdynamic (W)
V DD
P static= [ I D .V in =V OL /*I D .V in =V OH /]
2
Minimum area nMOS, pMOS transistor layouts limited by design rules
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 6
Minimum Area (Unit) MOS Transistor Layouts
61 31 41
31
41 14 1
21
51 21 51 21
2 2 41
Area=28∗14 1 =392 1 21
kn'
kn' = KPn = A/V2
A ID = 0
C
<
B
≥
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 9
CALCULTION OF VOH
VDD
Vin = VDD
implies
-1
VIL
@ Vin = VIL
VIH
0 VT0n VDD
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 16
Take Limit as knRL -> ∞
-> VT0n
-> VT0n 1
V out .V in=V IL /=V DD − -> VDD
k n RL
-> VT0n
V out .V in =V IH /=
-
2 V DD
3 k n RL
-> 0
-> 0
Vout
VDD
knRL -> ∞
semi-ideal VTC
Vin
0 VT0n VDD
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 17
1
V DD
P static .average/= [ I D .V in =0/* I D .V in =V DD /]
2
Vin = 0
P(Vin = “0”) = 0
Pstatic (average)
Multiplying by RL
W 30 x 2.V
10 −6
W
DD −V OL / 2.5−0.2/
R
5−0.2=
L = ' R 2
=
[2.5−1/0.2−.0.2/
2
−6 ] 2
0
L k n .2.V
2 DD−VLT0n/V OL −V OL / 30 x 10 .2.5−1/0.2−.0.2/ /
L
W
R L=2.05 x 105 0 NO UNIQUE W/L, RL
L
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 19
W 5
R L =2.05 x 10 0
L
V DD V DD −V OL
P static .average /=
2 RL
VSB,L ≠ 0
VSB,d
VSB,L
A ID = 0
C
<
B
≥
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 26
QUICK REVIEW
VDD
0 VT0n VDD
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 27
QUICK REVIEW
W 5
R L =2.05 x 10 0
L
Pstatic (average) [mW]
V DD V DD −V OL
P static .average /=
2 RL
IDn = IDp
≤
≤
≥
≥
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 29
“Visual” Representation of the CMOS Inverter
A
V th
V th−V T0n
V out
=∞ (iff λ = 0)
V in
-1
V th V DD
-VT0n
V IL V IH
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 32
IDn = IDp = 0
0=
IDn = IDp = 0
=0
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 33
IDn = IDp
Eq.(1)
Eq.(2)
SOLVE Eq. (1) and Eq. (2) for Vout and VIL or use simulation.
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 35
IDn = IDp
Eq.(4)
SOLVE Eq. (3) and Eq. (4) for Vout and VIH or use simulation.
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 37
IDn = IDp
Eq.(5)
V th =
V T0n *
- 1
kR
.V DD *V T0p /
Eq.(5)
Eq.(5)
1*
1
-
kR
2 Important design
V DD *V T0p −V th
Solving Eq.(5) for kR k R =.
V th −V T0n
/ Eq. for CMOS
inverter VTC.
1
If Vth is ideal Vth
set to V th =V th .ideal /= 2 V DD
0.5V DD *V T0p 2 2n .W / L/n
k R=. /=
0.5 V DD −V T0n 2 p .W / L/ p
Symmetric CMOS Inverter
W p 2n W n
V If Vand
If,th(ideal)
also VT0n = -V
and V = -VV
= =>=(k
V )symmetric =1.k=> / . /=
=1 . /
th(ideal) T0p
T0n T0T0p RT0 R Lp
symetric 2 p Ln
1 2p W p
=
k R 2n W n
where Ln = Lp
Vth (volts)
1/kR
V th =
V T0n *
-1
kR
.V DD *V T0p /
VDD = 5V; VT0n = - VT0p = 1 V
1*
- 1
kR
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 41
Symmetric CMOS inverter Vth(ideal) and VT0n = - VT0p = VT0 => .k R /symetric =1
.W / L/ p ≈2.52 .W / L/n
Symmetrical
Eq.(1)
1
Eq.(2) => V IL =V out − 2 V DD
Substitute V out =V IL * 1 V DD , V = V and Sym-Inv Cond. into Eq.(1), i.e.
2 in IL
V DD
5 2 3 2
NM H =V OH −V IH =V DD −. V DD − V T0 /= V DD * V T0 =2.125V
0 8 8 8 8
3 2 3 2
NM L =V IL −V OL=V IL = V DD * V T0 = V DD * V T0 =2.125V
8 8 8 8
Pstatic = 0
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 45
If the inverter cell is part of a
standard cell library, it will adhere Smaller Area
to the cell layout protocols. Layout
Pstatic > 0
Kenneth R. Laker, University of Pennsylvania, updated 12Feb15 47