2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor

January 2009

2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

Features
• High Current Capability: IC = -17A.
• High Power Dissipation : 150watts. TO-264
1
• High Frequency : 30MHz.
• High Voltage : VCEO= -250V 1.Base 2.Collector 3.Emitter
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5200/FJL4315.
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage -250 V

BVCEO Collector-Emitter Voltage -250 V

BVEBO Emitter-Base Voltage -5 V

IC Collector Current -17 A

IB Base Current -1.5 A

PD Total Device Dissipation(TC=25°C) 150 W

Derate above 25°C 1.04 W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 0.83 °C/W
* Device mounted on minimum pad size

hFE Classification
Classification R O
hFE1 55 ~ 110 80 ~ 160

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 1
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* T =25°C unless otherwise noted
a

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V

BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -250 V

BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V

ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA

IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA

hFE1 DC Current Gain VCE=-5V, IC=-1A 55 160

hFE2 DC Current Gain VCE=-5V, IC=-7A 35 60

VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V

VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V

fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz

Cob Output Capacitance VCB=-10V, f=1MHz 360 pF

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

Ordering Information
Part Number Marking Package Packing Method Remarks
2SA1943RTU A1943R TO-264 TUBE hFE1 R grade
2SA1943OTU A1943O TO-264 TUBE hFE1 O grade
FJL4215RTU J4215R TO-264 TUBE hFE1 R grade
FJL4215OTU J4215O TO-264 TUBE hFE1 O grade

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 2
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Typical Characteristics

-20 IB = -900mA
IB = -1A
IB = -800mA
-18 o VCE = -5V
Tj = 125 C
IB = -700mA o
IC[mA], COLLECTOR CURRENT

Tj = 25 C
-16 IB = -600mA
IB = -500mA

hFE, DC CURRENT GAIN

100
-14 A
IB = -400m
-12 IB = -300mA
o
Tj = -25 C
-10 IB = -200mA
-8
IB = -100mA 10
-6

-4

-2

1
-0 -2 -4 -6 -8 -10 0.1 1 10

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )

10000
o Ic=-10Ib
Vce(sat)[mV], SATURATION VOLTAGE

Tj = 125 C o
Tj = 25 C VCE = -5V
hFE, DC CURRENT GAIN

100
1000
o
Tj = -25 C

o
o
Tj=25 C
10 Tj=125 C
100

o
Tj=-25 C

1 10
0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT

Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage

14
10000
Vbe(sat)[mV], SATURATION VOLTAGE

Ic=-10Ib 12
IC[A], COLLECTOR CURRENT

V CE = 5V
10

8
o o
Tj=-25 C Tj=25 C
1000 6

o
4
Tj=125 C

0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
100
0.1 1 10

Ic[A], COLLECTOR CURRENT V BE [V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 3
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Typical Characteristics

100
1.0
Transient Thermal Resistance, Rthjc[ C / W]

IC MAX. (Pulsed*)
0.9

IC [A], COLLECTOR CURRENT

o

0.8 10ms*
10
0.7
IC MAX. (DC) 100ms*

0.6
DC
0.5 1

0.4

0.3
0.1
0.2
*SINGLE NONREPETITIVE
0.1 PULSE TC=25[ C]
o

0.01
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1 10 100

Pulse duration [sec] VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Thermal Resistance Figure 8. Safe Operating Area

160

140
PC[W], POWER DISSIPATION

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 9. Power Derating

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 4
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Package Dimensions

TO-264

20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2
.00

20.00 ±0.20
0
)

±0.2

(R1
.00
0
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 5
 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 6
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