TCD1503D

TOSHIBA CCD LINEAR IMAGE SENSOR CCD (Charge Coupled Device)

TCD1503D
The TCD1503D is a high sensitive and low dark current 5000
elements CCD image sensor.
The sensor is designed for facsimile, imagescanner and OCR.
The device contains a row of 5000 elements photodiodes which
provide a 16 lines / mm (400DPI) across a A3 size paper. The
device is operated by 5 V (pulse), and 12 V power supply.

FEATURES
l Number of Image Sensing Elements : 5000 elements
l Image Sensing Element Size : 7 µm by 7 µm on 7 µm
centers
l Photo Sensing Region : High sensitive and low
voltage dark
signal pn photodiode Weight: 5.2g (Typ.)
l Clock : 2 phase (5 V)
l Package : 22 pin Cerdip

PIN CONNECTION
MAXIMUM RATINGS (Note 1)

CHARACTERISTIC SYMBOL RATING UNIT

Clock Pulse Voltage Vφ

Shift Pulse Voltage VSH
−0.3~8
Reset Pulse Voltage VRS V

Clamp Pulse Voltage VCP

Power Supply Voltage VOD −0.3~15
Operating Temperature Topr −25~60 °C
Storage Temperature Tstg −40~100 °C

Note 1: All voltage are with respect to SS terminals (Ground).

(TOP VIEW)

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CIRCUIT DIAGRAM

PIN NAMES
φ1E, O Clock (Phase 1)

φ2E, O Clock (Phase 2)

φ2B Final Stage Clock (Phase 2)

SH Shift Gate
RS Reset Gate
CP Clamp Gate
OS1 Signal Output 1
OS2 Signal Output 2
OD Power
SS Ground
NC Non Connection

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OPTICAL / ELECTRICAL CHARACTERISTICS
(Ta = 25°C, VOD = 12 V, Vφ = VSH = VRS = VCP = 5 V (PULSE), fφ = 1 MHz,
tINT (INTEGRATION TIME) = 10 ms, LIGHT SOURCE = DAYLIGHT FLUORESCENT LAMP,
LOAD RESISTANCE = 100 kΩ)

CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT NOTE

Sensitivity R 7.2 9 10.8 V / lx·s

PRNU ― 3 10 % (Note 2)
Photo Response Non Uniformity
PRNU (3) ― 4 10 mV (Note 8)
Saturation Output Voltage VSAT 1.5 2.0 ― V (Note 3)
Saturation Exposure SE 0.14 0.22 ― lx·s (Note 4)
Dark Signal Voltage VDRK ― 1.0 2.5 mV (Note 5)
Dark Signal Non Uniformity DSNU ― 1.0 2.5 mV (Note 5)
DC Power Dissipation PD ― 350 400 mW
Total Transfer Efficiency TTE 92 ― ― %
Output Impedance Zo ― 0.2 1 kΩ
Dynamic Range DR ― 2000 ― ― (Note 6)
VOS1 4.0 5.5 7.0
DC Signal Output Voltage V (Note 7)
VOS2 4.0 5.5 7.0
DC Differential Error Voltage |VOS1−VOS2| ― ― 300 mV
Random Noise NDσ ― 0.6 ― mV (Note 9)

Note 2: Measured at 50% of SE (Typ.)

∆χ
Definition of PRNU : PRNU = ´ 100 %
χ
Where χ is average of total signal outputs and ∆χ is maximum deviation from χ under uniformillumination.
(Channel 1)
In the case of 2500 elements (Channel 2), the condition is the same as above too.
Note 3: VSAT is defined as minimum saturation output voltage of all effective pixels.
V
Note 4: Definition of SE : SE = SAT (lx·s)
R

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Note 5: VDRK is defined as average dark signal voltage of all effective pixels.
DSNU is defined as different voltage between VDRK and VMDK when VMDK is maximum darksignal voltage.

V
Note 6: Definition of DR : DR = SAT
VDRK

VDRK is proportional to tINT (Integration Time).

So the shorter tINT condition makes wider DR values.

Note 7: DC signal output voltage and DC compensation output voltage are defined as follows:

Note 8: PRNU (3) is defined as maximum voltage with next pixel, where measured 5% of SE (Typ.)

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Note 9: Random noise is defined as the standard deviation (sigma) of the output level difference between two
adjacent effective pixels under no illumination (i.e. dark condition) calculated by the following procedure.

1) Two adjacent pixels (pixel n and n + 1) in one reading are fixed as measurement points.
2) Each of the output levels at video output periods averaged over 200 nanosecond period to get Vn and
Vn + 1.
3) Vn + 1 is subtracted from Vn to get∆V.
∆V = Vn − Vn + 1
4) The standard deviation of ∆V is calculated after procedure 2) and 3) are repeated 30 times (30
readings).

∆V =
1 30
å ∆Vi
30 i=1
σ=
1 30

å ∆Vi - ∆V
30 i=1

2

5) Procedure 2), 3) and 4) are repeated 10 times to get 10 sigma values.

1 10
s= å sj
10 j=1

6) I value calculated using the above procedure is observed 2 times larger than that measured relative
to the ground level. So we specify the random noise as follows.
1
Random noise = I
2

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OPERATING CONDITION

CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT

“H” Level Vφ1E, O 4.5 5 5.5

Clock Pulse Voltage V
Vφ2E, O
“L” Level 0 ― 0.5
“H” Level 4.5 5 5.5
Final Stage Clock Voltage Vφ2B V
“L” Level 0 ― 0.5
“H” Level 4.5 5 5.5
Shift Pulse Voltage VSH V
“L” Level 0 ― 0.5
“H” Level 4.5 5 5.5
Reset Pulse Voltage VRS V
“L” Level 0 ― 0.5
“H” Level 4.5 5 5.5
Clamp Pulse Voltage VCP V
“L” Level 0 ― 0.5
Power Supply Voltage VOD 11.4 12.0 13.0 V

CLOCK CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT

Clock Pulse Frequency fφ ― 1 20 MHz

Reset Pulse Frequency fRS ― 1 20 MHz
CφE ― 350 ―
Clock Capacitance (Note 10) pF
CφO ― 350 ―
Final Stage Clock Capacitance CφB ― 10 20 pF
Shift Gate Capacitance CSH ― 30 ― pF
Reset Gate Capacitance CRS ― 10 20 pF
Clamp Gate Capacitance CCP ― 10 20 pF

Note 10: VOD = 12V

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TIMING CHART

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TIMING REQUIREMENTS

Note 11: Each RS and CP pins put to Low level during this period.

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TYP.
CHARACTERISTIC SYMBOL MIN MAX UNIT
(Note12)
Pulse Timing of SH and φ1E, φ1O t1, t5 200 500 ― ns
SH Pulse Rise Time, Fall Time t2, t4 0 50 ― ns
SH Pulse Width t3 1000 1500 ― ns

φ2B Pulse Rise Time, Fall Time t6, t7 0 100 ― ns

RS Pulse Rise Time, Fall Time t8, t10 0 20 ― ns
RS Pulse Width t9 10 100 ― ns
Video Data Delay Time (Note 13) t11 ― 10 ― ns
CP Pulse Rise Time, Fall Time t12, t14 0 20 ― ns
CP Pulse Width t13 10 100 ― ns
Pulse Timing ofφ2B and CP t15 0 50 ― ns
t16 0 100 ―
Pulse Timing of RS and CP ns
t17 10 100 ―
Pulse Timing of SH and CP t18 200 ― ― ns
Pulse Timing of SH and RS t19 200 ― ― ns

Note 12 : TYP. is the case of fRS = 1.0 MHz

Note 13 : Load Resistance is 100 kΩ

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CAUTION
1. Window Glass
The dust and stain on the glass window of the package degrade optical performance of CCD sensor.
Keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the surface, and
allow the glass to dry, by blowing with filtered dry N2. Care should be taken to avoid mechanical or
thermal shock because the glass window is easily to damage.

2. Electrostatic Breakdown
Store in shorting clip or in conductive foam to avoid electrostatic breakdown.
CCD Image Sensor is protected against static electricity, but interior puncture mode device due to static
electricity is sometimes detected. In handing the device, it is necessary to execute the following static
electricity preventive measures, in order to prevent the trouble rate increase of the manufacturing system
due to static electricity.
a. Prevent the generation of static electricity due to friction by making the work with bare hands or by
putting on cotton gloves and non-charging working clothes.
b. Discharge the static electricity by providing earth plate or earth wire on the floor, door or stand of the
work room.
c. Ground the tools such as soldering iron, radio cutting pliers of or pincer.
It is not necessarily required to execute all precaution items for static electricity.
It is all right to mitigate the precautions by confirming that the trouble rate within the prescribed
range.

3. Incident Light
CCD sensor is sensitive to infrared light. Note that infrared light component degrades resolution and
PRNU of CCD sensor.

4. Lead Frame Forming

Since this package is not strong against mechanical stress, you should not reform the lead frame.
We recommend to use a IC-inserter when you assemble to PCB.

5. Soldering
Soldering by the solder flow method cannot be guaranteed because this method may have deleterious
effects on prevention of window glass soiling and heat resistance.
Using a soldering iron, complete soldering within ten seconds for lead temperatures of up to 260°C, or
within three seconds for lead temperatures of up to 350°C.

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PACKAGE DIMENSIONS

Note 1: No. 1 SENSOR ELEMENT (S1) TO EDGE OF PACKAGE.

Note 2: TOP OF CHIP TO BOTTOM OF PACKAGE.
Note 3: GLASS THICKNES (n = 1.5)

Weight: 5.2 g (Typ.)

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RESTRICTIONS ON PRODUCT USE 000707EBA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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