INTEGRATED CIRCUITS

DATA SHEET

TEA5551T
1-chip AM radio
Product specification October 1990
File under Integrated Circuits, IC01
Philips Semiconductors Product specification

1-chip AM radio TEA5551T

GENERAL DESCRIPTION
The TEA5551T is a 1-chip monolithic integrated radio circuit which is designed for use as a pocket receiver with
headphones in a supply voltage range (VS) of 1.8 V to 4.5 V.
The circuit consists of a complete AM part and dual AF amplifier with low quiescent current. The AF part has low radiation
(HF noise) and good overdrive performance. The dual AF amplifier makes the device suitable for operation in an AM/FM
stereo receiver with or without stereo cassette player. The IC has a 1-pin switch for AM or other applications.

Features
• Low voltage operation (VS = 1.8 V to 4.5 V)
• Low current consumption (Itot = 5 mA at VS = 3 V)
• All pins provided with ESD protection
AM part
• High sensitivity (Vi = 1.5 µV for Vo = 10 mV)
• Good IF suppression
• Good signal handling (Vi(max) = 80 mV)
• Switch for AM or other applications
• Short waveband (> 40 MHz)
AF part
• A fixed integrated gain of 32 dB
• Few external components required
• Very low quiescent current
• Low HF radiation and good AF overdrive performance
• 0 to 20 kHz limited frequency response
• 25 mW per channel output power in 32 Ω

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

QUICK REFERENCE DATA (at Tamb = 25 °C)

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Supply voltage VS 1.8 3.0 4.5 V
Supply current I5 + I10 − 6 − mA

AM part m = 0.3

RF sensitivity
RF input voltage
Vo(AF) = 10 mV Vi(RF) − 1.5 − µV
S/N = 26 dB Vi(RF) − 15 − µV
S/N = 50 dB Vi(RF) − 10 − mV
AF output voltage Vi(RF) = 1 mV Vo(AF) − 80 − mV
Total harmonic distortion Vi(RF) = 100 µV to 30 mV THD − 0.8 − %
Signal handling capability m = 0.8; THD = 10% Vi(RF) − 80 − mV

AF part both channels driven

Output power RL = 32 Ω; THD = 10%

at VS = 3.0 V Po − 25 − mW
at VS = 4.5 V Po − 60 − mW
Voltage gain Po = 10 mW Gv − 32 − dB
Channel separation 1 kHz α − 50 − dB

PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 25.

October 1990 3
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October 1990

Philips Semiconductors
1-chip AM radio
4

Product specification
TEA5551T
Fig.1 Block diagram.
Philips Semiconductors Product specification

1-chip AM radio TEA5551T

PINNING
1 AM GND 9 AF output amplifier 2
2 AM mixer output 10 AF supply voltage (VS)
3 AM AGC 11 AF + input amplifier 2
4 AM-IF input 12 AF − input amplifier 1
5 AM supply voltage (VP) 13 AM detector output
6 AF + input amplifier 1 14 AM oscillator
7 AF GND 15 AM−RF input
8 AF output amplifier 1 16 AM−RF input

Fig.2 All pins provided with ESD protection diodes to substrate.

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT
Supply voltage VS − 6 V
Supply current (peak) IM − 150 mA
Crystal temperature Tc − 150 °C
Short-circuit protection VS = 4.5 V tsc − 5 s
Total power dissipation Ptot see Fig.3
Storage temperature range Tstg −65 +150 °C
Operating ambient temperature range Tamb −25 +60 °C

QUALITY
In accordance with UZW-BO/FQ-0601.
Operating life endurance verified 2000 hours at Tj = 85 °C.
The product meets the 600 V ESD on all pins (HBM specification UZW-BO/FQ-A302).

THERMAL RESISTANCE
From junction to ambient Rth j-a = 110 K/W

Fig.3 Power derating curve.

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

DC CHARACTERISTICS
All voltages are referenced to pin 1 and pin 7; all input currents are positive; all parameters are measured in test circuit
of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Supply voltage VS 1.8 3.0 4.5 V
Voltages
pin 5 V5 1.6 2.8 4.3 V
pin 10 V10 1.8 3.0 4.5 V
HF part
Total current consumption (pin 5) I5 − 2.2 − mA
Oscillator current (pin 14) I14 − 100 − µA
Mixer current (pin 2) I2 − 200 − µA
Voltages
pin 3 V3 − 150 − mV
pin 13 V13 − 600 − mV
pin 15 V15 − 1.1 − V
pin 16 V16 − 1.1 − V
AF part
Total current consumption (pin 10) I5 − 4.0 − mA
Input bias current
(pin 11 connected to pin 16) I11 + I16 − 40 − nA
DC output voltage
pin 8 V8 - 1.5 − V
pin 9 V9 − 1.5 − V

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified.
RF conditions: Input frequency 1 MHz; 30% modulation where fmod = 1 kHz; unless otherwise specified.

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

RF sensitivity
RF input voltage Vo(AF) = 10 mV Vi(RF) − 1.5 − µV
Loss in sensitivity Vo(AF) = 10 mV;
VS = 1.8 V ∆Vi(RF) − 6 − dB
Noise
Signal-to-noise ratio for RF
input signal voltage of
Vi(RF) = 2 µV S/N − 6 − dB
Vi(RF) = 15 µV S/N − 26 − dB
Vi(RF) = 1 mV S/N − 46 − dB
AF output voltage
Vi(RF) = 1 mV Vo(AF) − 80 − mV
Vi(RF) = 1 mV;
VS = 1.8 V Vo(AF) − 55 − mV
Total harmonic distortion
Vi(RF) = 100 µV
to 30 mV THD − 0.8 − %
Vi(RF) = 80 mV;
m = 0.8 THD − 10 − %
AGC range
Change in RF input voltage
for 10 dB change in AF
output voltage Vi(RF1) = 50 mV Vi(RF1)/
Vi(RF2) − 86 − dB
Optimum source impedance Zsource − 3 − kΩ

IF suppression
at Vo(AF) = 10 mV note 1 α − 20 − dB
Oscillator (pin 14) fosc = 1468 kHz
Oscillator voltage Vi − 100 − mV
V5 = 1.5 V Vi − * − mV

Note to the AC characteristics

V i at f i = 468 kHz
1. α = ----------------------------------------------
V i at f i = 1 MHz

* Value to be fixed.

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified. RF conditions:
f = 1 kHz; RL = 32 Ω; unless otherwise specified.

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Output power
THD = 10% Po − 25 − mW
THD = 10%; VS = 1.8 V Po − 8 − mW
THD = 10%; VS = 4.5 V Po − 60 − mW
Total harmonic distortion Po = 10 mW THD − 0.5 − %

Voltage gain Po = 10 mW Gv − 32 − dB

Noise
Noise output voltage RS = 5 kΩ; B = 15 kHz Vno − 240 − µV
HF noise output voltage RS = 5 kΩ; B = 5 kHz;
f = 500 kHz Vno(RF) − 20 − µV
Input circuit
Input impedance pin 11 connected to pin 12 Zi − 3 − MΩ
Mute switch
AC impedance
(pin 13 to ground) V5 = 0 V; I13 = 0.32 mA RS − 200 − Ω

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

Conditions: fo = 1 MHz; fm = 1 kHz; VS = 3 V; Rg = 50 Ω; m = 0.3 (unless otherwise specified).

Fig.4 Typical signal (S) and noise (N) output voltages, where Vo is the AF output voltage at pin 13, as a function
of the input voltage Vi. Vi is the input voltage at pin 16. Also shown is the total harmonic distortion (THD).

Conditions: VS = 3 V and 4.5 V; RL = 32 Ω; f = 1 kHz.

Fig.5 Total distortion (dtot) as a function of output power (Po).

October 1990 10
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October 1990

Philips Semiconductors
1-chip AM radio
11

Coil data: L1 7MCS2199

Product specification
TEA5551T
L2 7MCS2197
L3 7BRS10869X

Fig.6 Test circuit.

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October 1990

APPLICATION INFORMATION

Philips Semiconductors
1-chip AM radio
12

Product specification
TEA5551T
Coil data: L1 7MCS2199
L2 7MCS2197
L3 7BRS10869X

Fig.7 Application circuit.

Philips Semiconductors Product specification

1-chip AM radio TEA5551T

COIL DATA
AM coils (Figs 6 and 7)

Fig.8 IF bandpass filter (L1). TOKO sample no. 7MCS2199.

Fig.9 IF bandpass filter (L2). TOKO sample no. 7MCS2197.

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

Fig.10 Oscillator coil (L3). TOKO sample no. 7BRS10869X.

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

D E A
X

y HE v M A

16 9

Q
A2
(A 3) A
A1
pin 1 index
θ
Lp

1 8 L

e w M detail X
bp

0 2.5 5 mm
scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A
UNIT max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ

0.25 1.45 0.49 0.25 10.0 4.0 6.2 1.0 0.7 0.7
mm 1.75 0.25 1.27 1.05 0.25 0.25 0.1 o
0.10 1.25 0.36 0.19 9.8 3.8 5.8 0.4 0.6 0.3 8
0.010 0.057 0.019 0.0100 0.39 0.16 0.244 0.039 0.028 0.028 0o
inches 0.069 0.01 0.050 0.041 0.01 0.01 0.004
0.004 0.049 0.014 0.0075 0.38 0.15 0.228 0.016 0.020 0.012

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

95-01-23
SOT109-1 076E07S MS-012AC
97-05-22

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

SOLDERING During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be
Introduction
applied by screen printing, pin transfer or syringe
There is no soldering method that is ideal for all IC dispensing. The package can be soldered after the
packages. Wave soldering is often preferred when adhesive is cured.
through-hole and surface mounted components are mixed
Maximum permissible solder temperature is 260 °C, and
on one printed-circuit board. However, wave soldering is
maximum duration of package immersion in solder is
not always suitable for surface mounted ICs, or for
10 seconds, if cooled to less than 150 °C within
printed-circuits with high population densities. In these
6 seconds. Typical dwell time is 4 seconds at 250 °C.
situations reflow soldering is often used.
A mildly-activated flux will eliminate the need for removal
This text gives a very brief insight to a complex technology.
of corrosive residues in most applications.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Repairing soldered joints

Reflow soldering Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
Reflow soldering techniques are suitable for all SO (less than 24 V) applied to the flat part of the lead. Contact
packages. time must be limited to 10 seconds at up to 300 °C. When
Reflow soldering requires solder paste (a suspension of using a dedicated tool, all other leads can be soldered in
fine solder particles, flux and binding agent) to be applied one operation within 2 to 5 seconds between
to the printed-circuit board by screen printing, stencilling or 270 and 320 °C.
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.

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Philips Semiconductors Product specification

1-chip AM radio TEA5551T

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

October 1990 17