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Jaycar Electronics Reference Data Sheet: LEDUSEJ.
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Using LEDs – It’s Easy!
LIGHT EMITTING DIODES or ‘LEDs’ are now very widely used in almost every area of electronics, mainly as ANODE CONNECTION EPOXY ENCAPSULATION WITH indicator and display devices — in effect, ‘solid state lamps’. WIRE WEDGE BONDED MAGNIFYING DOME LENS They’re very well suited for this kind of use, because they TO POST, BALL are physically quite rugged and hence much more reliable BONDED TO CHIP than filament-type incandescent lamps. They also run much LED CHIP ATTACHED VIA cooler and are much more efficient, requiring far less CONDUCTIVE EPOXY electrical power input for the same amount of light output. Other common uses for LEDs are as a source of either REFLECTOR DISH COINED visible or infra-red light, transmitted as a carrier for data ANODE POST INTO TOP OF CATHODE POST and other information over short ‘line of sight’ distances. A LED is basically just a specialised type of P-N junction FLAT ON CATHODE SIDE diode, made from a thin chip of fairly heavily doped OF BASE FLANGE semiconductor material. When it is forward biased to ANODE LEAD reduce the potential barrier provided by the junction’s (LONGER) CATHODE LEAD narrow depletion layer, electrons from the semiconductor’s (SHORTER) conduction band can combine with holes from the valence band, releasing sufficient energy to produce photons of light. Because the chip is thin a reasonable number of these photons can leave it and radiate away as its light output. Fig.1: The construction used for most common ‘leaded’ LEDs. Unlike diodes made for detection and rectification, which are generally made from either germanium or silicon, LEDs are made from compound semiconductor materials such as current level of 20mA. The construction of a typical LED is gallium arsenide (GaAs), gallium phosphide (GaP), gallium shown in Fig.1 above. LEDs with leads like that shown are arsenide-phosphide (GaAsP), silicon carbide (SiC) and made in a variety of package shapes and sizes, of which the gallium indium nitride (GaInN). The exact choice of 3mm, 5mm and 10mm diameter ‘bullet’ type with a semiconductor determines the wavelength of peak emission spherical front lens are the most common. Other much of photons — and hence the colour of the light emitted, in smaller packages are used for surface-mount LEDs. the case of visible light LEDs. It can also determine the electro-optical conversion efficiency, and hence the light How they’re used output for a given amount of forward conduction current. In most cases LEDs are operated from a low voltage DC Another parameter determined by the compound supply, with a series resistor (Fig.2) to limit the forward semiconductor used in a LED is the forward voltage drop current to a suitable value — from say 5-6mA for a simple for a given forward conduction current. pilot lamp or status indicator application to 20mA or more where more light output is needed. As you can see the Table 1 shows the peak emission wavelength for the series resistor value is easily worked out knowing the most common types of LED, with the nominal colour required operating current I F, the supply voltage and the indicated and also the typical forward voltage drop for a LED’s forward voltage drop at this current level. The LED’s voltage drop V LED can usually be estimated Table 1: Typical LED characteristics from the figures given in Table 1 for a current of 20mA, although the actual voltage drop will be a bit lower for Nominal Semiconductor Peak Emission VFORWARD @ 20mA Colour material wavelength much lower current levels. Note that the resistor value is Typical Range Infra-red GaAs 870-940nm 1.2V 1.1 - 1.6V Red 1.5 - 2.6V RESISTOR GaAsP/GaP 650-700nm 2.0V VRESISTOR Fig.2: In most 1.7 - 2.8V + – Orange GaAsP/GaP 620-650nm 2.0V + + cases LEDs are Yellow InGaAlP 580-620nm 2.4V 1.7 - 3.0V operated from A LED DC, and a simple Green GaP 510-560nm 2.8V 1.7 - 4.0V series resistor is VSUPPLY CURRENT l VLED used to set the Blue GaN/SiC 420-470nm 3.6V 3.2 - 4.3V IF forward current White GaN/SiC 460 +570nm 3.6V 3.2 - 4.3V K level. The value – – of the required resistor is easily ORG