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Schottky Diode

A schottky diode has a low forward voltage drop and fast switching. It forms a junction when a metal contacts a semiconductor. A tunnel diode contains a heavily doped p-n junction and exhibits electron tunneling. An LED produces light via electroluminescence when current passes through its semiconductor. A varactor diode's capacitance varies with the applied voltage, allowing its use in tuning circuits.

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48 views

Schottky Diode

A schottky diode has a low forward voltage drop and fast switching. It forms a junction when a metal contacts a semiconductor. A tunnel diode contains a heavily doped p-n junction and exhibits electron tunneling. An LED produces light via electroluminescence when current passes through its semiconductor. A varactor diode's capacitance varies with the applied voltage, allowing its use in tuning circuits.

Uploaded by

Yen
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Schottky diode:

A schottky diode is also identified as hot electron diode or schottky barrier


diode. It has a stumpy forward voltage drop with extremely quick switching
features. Schottky barrier diode is a solid state diode in which the joint is shaped
by the contact of a metal semiconductor. The hot electron diode is generally
made-up from N-kind of material or slightly doped substrate and a metal like
aluminum. An exceedingly doped substrate may provide a reduced ohmic
contact and an elevated series of resistance, therefore not sensible. The metal
has been dissolved or stammered on top of the semi-conductor. The hot carrier
diode is another kind of schottky diode. Some of the common kinds of schottky
diode are- 1n5818, 1n5817, 1n5819.
 Rapid switching with quicker revival time.
 Lower intersection capacitance.
 Less power loss due to low turn on/forward voltage.

Tunnel Diode:
A tunnel diode is a highly conducting two terminal p-n jnction diode doped
heavily approximately 1000 times upper than a usual junction diode. A tunnel
diode is also named as Esaki diode, it’s named after Esaki diode who is a Nobel
prize winner in physics for discovering electron tunneling outcome employed in
these diodes. Tunnel diodes are helpful in several circuit purposes like in-
microwave oscillation, binary memory & microwave amplification. Tunnel diodes
are generally made-up from gallium or germanium or gallium arsenide. These all
comprise tiny prohibited energy breaks and elevated ion motilities.
Silicon is not utilized in the manufacturing of tunnel diodes owing to its low value
(Ip,I v).

Light Emitting Diode or LED:


LED is a semiconductor appliance that produces visible light beams or
infrared light beams when an electric current is passed through it. Visible LEDs
can be seen in several electronic devices such as microwaves’ number display
light, brake lights, and even cameras to make use of Infrared LEDs. In LEDs
(light emitting diodes) light is created by a solid situation procedure which is
named as electroluminescence.
Light emitting diodes are available in various colors like- orange, red, yellow,
amber, green, white & blue. Blue & white LEDs are more costly in comparison to
other LEDs. The color of a Light emitting diodes is decided by the semi-
conductor substance, not by the coloring the plastic of the body.

Varactor diode:
Varicap or Varactor diode is that shows the attributes of a variable
capacitor. The exhaustion area at the p-n junction behaves as the di-electric and
plates of an ordinary capacitor and grounds expansion and contraction by the
voltage applied to the varicap diode. This action boosts and reduces the
capacitance. The graphic symbol for the varicap diode is shown
below. Varactors are employed in fine-tuning circuits and can be employed as
high frequency amplifiers.
Gunn Diode:

Gun diodes can also be called as TED (transferred electron devices).


These are basically employed in microwave RF devices for frequencies amid 1
and 100 GHz. As microwave RF devices contain Gunn diodes it produces
microwave RF signals. The Gunn diode may also be employed for an amplifier
and may be acknowledged as TEA (transferred electron amplifier). As Gunn
diodes are simple to bring into play, they figure a comparatively low priced
technique for producing microwave RF signals. This gun diode is a distinctive
component, although it’s named as diode, it doesn’t comprise of a p-n diode
junction. Gunn diodes can be named as diodes because it has 2 electrodes.
Gunn diodes are made from a solitary part of n-type semi- conductor. The most
ordinary materials used are GaAs, InP Indium Phosphide, and gallium Arsenide.

Pin Diode:

A PIN diode is a diode with a broad, slightly doped close to inherent semi-
conductor area amid an n-type semiconductor and p-type semi-conductor area.
The n-type & p-type areas are usually heavily doped for the reason that they are
employed for ohmic contacts. The broad inherent area formulates the PIN diode
a low rectifier (the common purpose of a diode), but it formulates the PIN diode
appropriate for fast switches, photo-detectors, attenuators, and high voltage
power electric devices.

Laser Diode:

Laser diode is also named as diode laser or injection diode. It is a semi-


conductor appliance that generates coherent radiation (where waves are at
similar phase & frequency) in the infrared (IR) or visible spectrum when current is
passed via laser diode. Laser diodes are employed in CD (compact disc) players,
remote control devices, intrusion detection systems, optical fiber systems and
laser printers.

Laser diodes vary from usual lasers, like the He-Ne (helium-neon), gas & ruby
types, in a number of ways:-
 Laser diodes are small in weight & size
 Laser diodes are Low in intensity
 Laser diodes has wide-angle beam
 Laser diodes require low current, voltage & power

Photo Diode:

Photo diodes are extensively used in various kinds of electronics such as


detectors in compact disc players to optical telecommunications systems. Photo
diode technology is popular because its trouble-free, inexpensive yet strong
configuration. As photodiodes provide dissimilar properties, various photodiode
technologies are utilized in a number of areas.

There are 4 types of photo diodes-


 PN photodiode
 PIN photodiode
 Schottky photodiode
 Avalanche photodiode

Zener Diode:

Zener diode works in reverse bias situation when the voltage attains the
breakdown peak. An even voltage can be attained by insertion of a resistor
across it to limit the flow of current. This Zener diode is employed to give
reference voltage in power supplying circuits.

Transient Voltage Suppression Diode:

In semiconductor devices due to the sudden change in the state voltage


transients will occur. They will damage the device output response. To overcome
this problem voltage suppression diode diodes are used. The operation of
voltage suppression diode is similar to Zener diode operation. The operation of
these diodes is normal as p-n junction diodes but at the time of transient voltage
its operation changes. In normal condition the impedance of the diode is
high. When any transient voltage occurs in the circuit the diode enters in to the
avalanche breakdown region in which the low impedance is provided. It is
spontaneously very fast because the avalanche breakdown duration ranges in
Pico seconds. Transient voltage suppression diode will clamp the voltage to the
fixed levels, mostly its clamping voltage is in minimum range. These are having
applications in the telecommunication fields, medical, microprocessors and signal
processing. It responds to over voltages faster than varistors or gas discharge
tubes.

Crystal Diode:

This is also known as Cat’s whisker which is a type of point contact diode.
Its operation depends on the pressure of contact between semiconductor crystal
and point. In this a metal wire is present which is pressed against the
semiconductor crystal. In this the semiconductor crystal acts as cathode and
metal wire acts as anode. These diodes are obsolete in nature. Mainly used in
microwave receivers and detectors.

Avalanche Diode:

This is passive element works under principle of avalanche breakdown. It


works in reverse bias condition. It results large currents due to the ionization
produced by p-n junction during reverse bias condition. These diodes are
specially designed to undergo breakdown at specific reverse voltage to prevent
the damage. The symbol of the avalanche diode is as shown below:

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