CHAPTER- ELECTRONIC DEVICES

Important questions for AISSCE 2016

2 Marks Question

1. Explain how the width of depletion layer in p.n junction diode changes when junction is
forward biased and reverse biased.

Ans: In forward biasing , applied potential difference causes a field which acts opposite
to the potential barrier. This results in reducing the potential barrier so width of depletion layer
decreases.

While in reverse biasing, applied potential difference causes a field which is in same direction as
the field due to internal potential barrier.This causes an increase in barrier voltage and hence width
of depletion layer increases.

2. Write down the differences between p -type and n-type semiconductor.

p-Type n-Type
 When trivalent impurity atoms like  When pentavalent impurity atoms like
Al,Ga etc are added in an intrinsic As,Sb etc are added in an intrinsic
semiconductor, we get p type semiconductor, we get n type
semiconductor. semiconductor.
 The majority charge carriers in p type  The majority charge carriers here are
are holes. electrons.
 Nh>>Ne  Ne >> Nh
 Acceptor energy level lies close to the  Donor energy level lies close to
valence band. conduction band.

3. What are logic gates? Explain the various types of basic logic gates available using their Boolean
expression, symbol representation and truth table.
Ans:The digital circuits that can be analysed with the help of Boolean algebra are called logic
gates.
Three different types of basic logic gates are:
 OR Gate: Boolean expression for OR gate is :-> Y=A+B
Representation:

Truth Table:
INPUT OUTPUT
A B Y
0(Off) 0(Off) 0(Off)
 0(Off) 1(On) 1(On)
1(On) 0(Off) 1(On)
1(On) 1(On) 1(On)

 AND Gate: Boolean Expression for AND Gate is:-> Y=A.B

Representation:

Truth Table:

INPUT OUTPUT
A B Y
0(Off) 0(Off) 0(Off)
0(Off) 1(On) 0(Off)
1(On) 0(Off) 0(Off))
1(On) 1(On) 1(On)
 NOT Gate: Boolean Expression for NOT Gate is:-> Y=A’
Representation:

Truth Table:
INPUT OUTPUT
A Y
0(Off) 1(On)
1(On) 0(Off))

3 Marks Question

1 .What is a rectifier? What is the basic principle used for a diode to act like a full wave
rectifier?Explain.

Ans: The process of conversion from A.C to D.C is called rectification and the circuit used for this
conversion is called Rectifier.

Principle Used: A crystal diode offers very small resistance in forward bias while it offers large
resistance in reverse bias.
 For full wave rectification, two p-n junction diodes are used in the circuit.
During the +ve half cycle of input AC, the diode D1 is in forward bias and at that time diode D2 is
in reverse bias. So the forward current flows through D1 while no current flows through D2.
Hence +ve half cycle of AC is rectified through D1.
Now during the –ve half cycle of AC, the diode D1 is in reverse bias and at the same time D2 is in
forward bias, so at that time D2 conducts and rectifies the –ve half cycle of AC.

Overall we observe that during both halves , current through RL flows in the same direction.The
output voltage is unidirectional having ripple contents i.e DC components and AC
components.It is filtered before use.
Ripple factor of Rectifier:->
R.F= Value of AC Component/ Value of DC Component
=Iac/ Idc
=Eac/Edc
= (IRMS/IDC)2-1
R.F for full wave rectifier comes out to be 0.48.

2. Explain the forward characteristics of P-N junction diode.

Ans:This is the graphical relation between forward bias voltage which is applied to p-n junction and
forward current flows through p-n junction.
 The circuit arrangement to get forward characteristics of a p-n junction diode is shown above in
the diagram.

For the given low forward bias voltage from voltmeter note the corresponding forward current
in milliammeter. For each increased value of forward bias voltage from noted the
corresponding forward currents.On plotting a graph between V on x axis and I on y-axis, we get
a curve OAB.It is found that beyond forward voltage V=VK(known as Knee Voltage)the
conductivity is very high.
Knee Voltage is the forward voltage beyond which the current through the junction starts
increasing rapidly with voltage.
3. Explain the action and working of a n-p-n or p-n-p transistor.

Ans:Action of n-p-n transistor: The emitter base junction of n-p-n transistor is forward biased
.whereas the collector base junction is reverse biased.

When emitter-base junction is forward biased, electrons in the emitter are repelled by the
negative pole of the cell towards base. The barrier potential of emitter-base junction decreases
and the electrons enter the base. About 5% of these electrons combine with the holes in the
base region resulting in small base current (IB).The remaining electrons enter the collector
region because they are attracted towards the positive terminal of the battery.For each
electron entering the positive terminal of the battery VCB , an electron from the negative
terminal of the cell VEB enters the emitter region. Thus, continuous flow of electrons from
emitter to collector through the base region begins.
The emitter current is more than the collector current.The base current is the difference
between IE and IC and is proportional to the number of electron-hole combination in the base:
IE=IB + IC and IC=IE

5 Marks Question
1. What are the input and output characteristics of a n-p-n silicon transistor in the common
emitter configuration.What kind of a circuit arrangement should be used for this purpose?

Draw the typical shape of input characteristics and output characteristics to be obtained . What do
we understand by the cut-off, active and saturation states of the transistor.

Ans: The circuit arrangement for the study of input and output characterisctics of n-p-n transistor
in the common emitter configuration is shown in figure:
Input characteristics: This graph is showing a relation between VBE and IB at a constant VCE:
Output characteristics: The graph below shows the relation between IC and VCE at a constant IB.

 For a given value of base current(IB), collector current increases rapidly with the
collector-emitter voltage in the beginning but a high value of VCE, collector current
becomes constant.
 For a given value of VCE, the collector current (IC) is higher for high value of base
current(IB).

 Cut Off State: Transistor will be in cut off state when output current (IC) is zero.(Input
voltage is minimum =0.6V for Si).Transistor doesn’t conduct.
 Active state: When there is some current (IC) in collector-emitter circuit , transistor is said
to be in active state.(for Si voltage is greater than 0.6V)
 Saturation State: When output voltage tends to zero then transistor is said to be in
saturation state.

Forbidden energy gap doesn’t change.It only adds one energy level.

2. How does a transistor work as an amplifier? Explain its functionality in detail. What is phase
difference between input signal and output signal?

Ans: Amplifier is a device which increases the amplitude of the input signal.

Common Emitter Amplifier(PNP Mode):

In common emitter amplifier , input signal to be amplified is applied between base emitter circuit
and the output amplified signal is taken across the load resistance in the emitter-collector circuit.

Emitter is made as a common terminal.

Here Ie= Ib+Ic

The output voltage Vo= Applied Voltage – Voltage drop across RL.

VO=VCE - ICRL

During positive half cycle of input signal , the forward bias of E.B junction decreases.As a result of
this Ie and hence Ic decreases. Therefore the voltage drop across RL also decreases and hence
according to above equation , VO increases.Since collector is connected to negative terminal of
source, so increase in collector voltage shows it becomes more negative.Thus amplified negative
signal is obtained across RL.

While during the negative half cycle of input signal, the forward bias of E-B junction increases. As a
result of this Ie and hence Ic increases. Thus the voltage drop across RL increases and therefore
according to equation the collector voltage decreases.Since collector is connected to negative
terminal of the source. So decrease in collector voltage means collector becomes less(-ve), so
amplified +ve signal is obtained across output.

So in C-E amplifier, the output decreases with increasing input signal and increases with decreasing
input signal.Here input and output signals are out of phase i.e:

“There is a phase difference of 180o between the input and the output signal.

“ DO YOUR BEST,
FORGET THE REST.”