PESDxL4UF; PESDxL4UG;

PESDxL4UW
Low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 04 — 28 February 2008 Product data sheet

1. Product profile

1.1 General description

Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
four signal lines from the damage caused by ESD and other transients.

Table 1. Product overview

Type number Package Package configuration
NXP JEITA JEDEC
PESD3V3L4UF SOT886 - MO-252 leadless ultra small
PESD5V0L4UF SOT886 - MO-252 leadless ultra small
PESD3V3L4UG SOT353 SC-88A - very small
PESD5V0L4UG SOT353 SC-88A - very small
PESD3V3L4UW SOT665 - - ultra small and flat lead
PESD5V0L4UW SOT665 - - ultra small and flat lead

1.2 Features
n ESD protection of up to four lines n Ultra low leakage current: IRM = 5 nA
n Low diode capacitance n ESD protection up to 20 kV
n Max. peak pulse power: PPP = 30 W n IEC 61000-4-2; level 4 (ESD)
n Low clamping voltage: VCL = 12 V n IEC 61000-4-5 (surge); IPP = 2.5 A

1.3 Applications
n Computers and peripherals n Communication systems
n Audio and video equipment n Portable electronics
n Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

1.4 Quick reference data

Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage
PESD3V3L4UF - - 3.3 V
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - - 5.0 V
PESD5V0L4UG
PESD5V0L4UW
Cd diode capacitance f = 1 MHz; VR = 0 V
PESD3V3L4UF - 22 28 pF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - 16 19 pF
PESD5V0L4UG
PESD5V0L4UW

2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
PESD3V3L4UF; PESD5V0L4UF
1 cathode (diode 1)
1 2 3
2 common anode 1 6

3 cathode (diode 2) 2 5
4 cathode (diode 3) 3 4
5 common anode 006aaa156
6 5 4
6 cathode (diode 4) bottom view

PESD3V3L4UG; PESD5V0L4UG
1 cathode (diode 1)
5 4
2 common anode 1 5

3 cathode (diode 2) 2
4 cathode (diode 3) 3 4
5 cathode (diode 4) 1 2 3
006aaa157

PESD3V3L4UW; PESD5V0L4UW
1 cathode (diode 1)
5 4
2 common anode 1 5

3 cathode (diode 2) 2
4 cathode (diode 3) 3 4
5 cathode (diode 4) 006aaa157
1 2 3

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Product data sheet Rev. 04 — 28 February 2008 2 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PESD3V3L4UF XSON6 plastic extremely thin small outline package; SOT886
PESD5V0L4UF no leads; 6 terminals; body 1 × 1.45 × 0.5 mm

PESD3V3L4UG SC-88A plastic surface-mounted package; 5 leads SOT353

PESD5V0L4UG
PESD3V3L4UW - plastic surface-mounted package; 5 leads SOT665
PESD5V0L4UW

4. Marking
Table 5. Marking codes
Type number Marking code[1]
PESD3V3L4UF A5
PESD5V0L4UF A6
PESD3V3L4UG L1*
PESD5V0L4UG L2*
PESD3V3L4UW A2
PESD5V0L4UW A1

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp = 8/20 µs [1][2][3] - 30 W
IPP peak pulse current tp = 8/20 µs [1][2][3]

PESD3V3L4UF - 3.0 A
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - 2.5 A
PESD5V0L4UG
PESD5V0L4UW
IFSM non-repetitive peak forward square wave; - 3.5 A
current tp = 1 ms

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Product data sheet Rev. 04 — 28 February 2008 3 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

Table 6. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
IZSM non-repetitive peak reverse square wave;
current tp = 1 ms
PESD3V3L4UF - 0.9 A
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - 0.8 A
PESD5V0L4UG
PESD5V0L4UW
PZSM non-repetitive peak reverse square wave; - 6 W
power dissipation tp = 1 ms
Per device
Tj junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.

Table 7. ESD maximum ratings

Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge voltage IEC 61000-4-2 [1][2][3] - 20 kV
(contact discharge)
MIL-STD-883 (human - 10 kV
body model)

[1] Device stressed with ten non-repetitive ESD pulses.

[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.

Table 8. ESD standards compliance

Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV

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Product data sheet Rev. 04 — 28 February 2008 4 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

001aaa631

001aaa630 IPP
120
100 %

100 % IPP; 8 µs 90 %
IPP
(%)

80
e−t

50 % IPP; 20 µs

40

10 %

tr = 0.7 ns to 1 ns t
0
0 10 20 30 40 30 ns
t (µs) 60 ns

Fig 1. 8/20 µs pulse waveform according to Fig 2. ESD pulse waveform according to
IEC 61000-4-5 IEC 61000-4-2

6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage
PESD3V3L4UF - - 3.3 V
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - - 5.0 V
PESD5V0L4UG
PESD5V0L4UW
IRM reverse leakage current
PESD3V3L4UF VRWM = 3.3 V - 75 300 nA
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF VRWM = 5.0 V - 5 25 nA
PESD5V0L4UG
PESD5V0L4UW
VBR breakdown voltage IR = 1 mA
PESD3V3L4UF 5.32 5.6 5.88 V
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF 6.46 6.8 7.14 V
PESD5V0L4UG
PESD5V0L4UW

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Product data sheet Rev. 04 — 28 February 2008 5 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

Table 9. Characteristics …continued

Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Cd diode capacitance f = 1 MHz;
VR = 0 V
PESD3V3L4UF - 22 28 pF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - 16 19 pF
PESD5V0L4UG
PESD5V0L4UW
VCL clamping voltage [1][2][3]

PESD3V3L4UF IPP = 1 A - - 8 V
PESD3V3L4UG
PESD3V3L4UW
PESD3V3L4UF IPP = 3 A - - 12 V
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF IPP = 1 A - - 10 V
PESD5V0L4UG
PESD5V0L4UW
PESD5V0L4UF IPP = 2.5 A - - 13 V
PESD5V0L4UG
PESD5V0L4UW
rdif differential resistance IR = 1 mA
PESD3V3L4UF - - 200 Ω
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF - - 100 Ω
PESD5V0L4UG
PESD5V0L4UW

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.

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Product data sheet Rev. 04 — 28 February 2008 6 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

006aab134 006aab135
10 102

IZSM PZSM
(A) (W)

(1)
1 10
(1)
(2)
(2)

10−1 1
10−2 10−1 1 10 10−2 10−1 1 10
tp (ms) tp (ms)

Tamb = 25 °C Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 3. Non-repetitive peak reverse current as a Fig 4. Non-repetitive peak reverse power dissipation
function of pulse duration; maximum values as a function of pulse duration; maximum
values

006aab136 006aab137
26 10
Cd
(pF)
22 IR
IR(25°C)

18

1
(1)
14

(2)
10

6 10−1
0 1 2 3 4 5 −75 −25 25 75 125 175
VR (V) Tj (°C)

f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 5. Diode capacitance as a function of reverse Fig 6. Relative variation of reverse current as a
voltage; typical values function of junction temperature; typical values

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Product data sheet Rev. 04 — 28 February 2008 7 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

−VCL −VBR −VRWM V

−IRM
−IR

− +

P-N

−IPP

006aaa407

Fig 7. V-I characteristics for a unidirectional ESD protection diode

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Product data sheet Rev. 04 — 28 February 2008 8 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

ESD TESTER DIGITIZING

RG 223/U OSCILLOSCOPE
RZ 450 Ω 50 Ω coax 10×
ATTENUATOR
(1)
CZ 50 Ω
DUT
DEVICE
UNDER
TEST
IEC 61000-4-2 network (1): attenuator is only used for open
CZ = 150 pF; RZ = 330 Ω socket high voltage measurements

vertical scale = 200 V/div vertical scale = 5 V/div

horizontal scale = 50 ns/div horizontal scale = 50 ns/div

PESD5V0L4UF/G/W
GND2

PESD3V3L4UF/G/W

GND
GND1

unclamped +1 kV ESD voltage waveform clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) (IEC 61000-4-2 network)

GND

GND

vertical scale = 200 V/div vertical scale = 5 V/div

horizontal scale = 50 ns/div horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aab138

Fig 8. ESD clamping test setup and waveforms

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Product data sheet Rev. 04 — 28 February 2008 9 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

7. Application information
The devices are designed for the protection of up to four unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 30 W per line for an 8/20 µs waveform each.

data- or transmission lines

DUT DUT
1 5 1 5

2 n.c. 2
3 4 3 4

unidirectional protection of 4 lines bidirectional protection of 3 lines

006aab126

Fig 9. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.

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Product data sheet Rev. 04 — 28 February 2008 10 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

8. Package outline

1.05 0.50 2.2 1.1

0.95 max 1.8 0.8
0.04
0.6
max 5 4 0.45
0.15
0.25
3 4
0.17
0.5
2.2 1.35
1.5 2.0 1.15
2 5
1.4
0.5

1 6 1 2 3
0.3 0.25
0.65 0.2 0.10
0.40 0.35
0.32 0.27 1.3

Dimensions in mm 04-07-22 Dimensions in mm 04-11-16

Fig 10. Package outline PESDxL4UF (SOT886) Fig 11. Package outline PESDxL4UG (SOT353/SC-88A)

1.7 0.6
1.5 0.5

5 4

0.3
0.1
1.7 1.3
1.5 1.1

1 2 3
0.27 0.18
0.5 0.17 0.08
1

Dimensions in mm 04-11-08

Fig 12. Package outline PESDxL4UW (SOT665)

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Product data sheet Rev. 04 — 28 February 2008 11 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 4000 5000 8000 10000
PESD3V3L4UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] - - -115 - -
4 mm pitch, 8 mm tape and reel; T4 [3] - - -132 - -
PESD5V0L4UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] - - -115 - -
4 mm pitch, 8 mm tape and reel; T4 [3] - - -132 - -
PESD3V3L4UG SOT353 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - - -135
4 mm pitch, 8 mm tape and reel; T2 [4] -125 - - - -165
PESD5V0L4UG SOT353 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - - -135
4 mm pitch, 8 mm tape and reel; T2 [4] -125 - - - -165
PESD3V3L4UW SOT665 2 mm pitch, 8 mm tape and reel - - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - - -
PESD5V0L4UW SOT665 2 mm pitch, 8 mm tape and reel - - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - - -

[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T4: 90° rotated reverse taping
[4] T2: reverse taping

10. Soldering

1.250
0.675

0.370
(6×)
0.500

1.700
solder lands
0.500
solder paste
0.270
(6×) occupied area

Dimensions in mm
0.325 0.425
(6×) (6×) sot886_fr

Reflow soldering is the only recommended soldering method.

Fig 13. Reflow soldering footprint PESDxL4UF (SOT886)

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Product data sheet Rev. 04 — 28 February 2008 12 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

2.65
0.60
(1×)

2.35 0.40 0.90 2.10

0.50
(4×)

0.50
solder lands (4×)
solder paste 1.20
solder resist
2.40
occupied area
Dimensions in mm sot353_fr

Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A)

2.25 2.65

4.50 2.70 0.70 0.30 1.00 4.00

1.15
solder lands 3.75

solder resist transport direction during soldering

occupied area

Dimensions in mm
Fig 15. Wave soldering footprint PESDxL4UG (SOT353/SC-88A)

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Product data sheet Rev. 04 — 28 February 2008 13 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

2.45
2.10
1.60
0.15
(2x)

0.70 0.45 0.40

(2×) (2×) (5×)

2.00 1.70 1.00 0.30 0.55

0.375
(2×)

1.25
1.375
1.20
2.20

solder lands placement area

0.075
solder resist occupied area Dimensions in mm

Reflow soldering is the only recommended soldering method.

Fig 16. Reflow soldering footprint PESDxL4UW (SOT665)

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Product data sheet Rev. 04 — 28 February 2008 14 of 17

NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

11. Revision history

Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXL4UF_G_W_4 20080228 Product data sheet - PESDXL4UF_G_W_3
Modifications: • Figure 8 “ESD clamping test setup and waveforms”: amended
PESDXL4UF_G_W_3 20080114 Product data sheet - PESDXL4UW_SER_2
PESDXL4UG_SERIES_1
PESDXL4UW_SER_2 20040406 Product specification - PESDXL4UW_SERIES_1
PESDXL4UG_SERIES_1 20040323 Product specification - -

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Product data sheet Rev. 04 — 28 February 2008 15 of 17

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Low capacitance unidirectional quadruple ESD protection diode arrays

12. Legal information

12.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and
internal review and subject to formal approval, which may result in
therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of products are for illustrative purposes only. NXP Semiconductors makes no
use of such information. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended Limiting values — Stress above one or more limiting values (as defined in
for quick reference only and should not be relied upon to contain detailed and the Absolute Maximum Ratings System of IEC 60134) may cause permanent
full information. For detailed and full information see the relevant full data damage to the device. Limiting values are stress ratings only and operation of
sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the
office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting
full data sheet shall prevail. values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
12.3 Disclaimers at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
General — Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
reliable. However, NXP Semiconductors does not give any representations or any inconsistency or conflict between information in this document and such
warranties, expressed or implied, as to the accuracy or completeness of such terms and conditions, the latter will prevail.
information and shall have no liability for the consequences of use of such
No offer to sell or license — Nothing in this document may be interpreted
information.
or construed as an offer to sell products that is open for acceptance or the
Right to make changes — NXP Semiconductors reserves the right to make grant, conveyance or implication of any license under any copyrights, patents
changes to information published in this document, including without or other industrial or intellectual property rights.
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof. 12.4 Trademarks
Suitability for use — NXP Semiconductors products are not designed,
Notice: All referenced brands, product names, service names and trademarks
authorized or warranted to be suitable for use in medical, military, aircraft,
are the property of their respective owners.
space or life support equipment, nor in applications where failure or

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

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NXP Semiconductors PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays

14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . 10
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13 Contact information. . . . . . . . . . . . . . . . . . . . . 16
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 February 2008
Document identifier: PESDXL4UF_G_W_4