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Tutorial Optical Sources and Detectors

This document provides 11 tutorial problems related to optical sources and detectors: 1. Calculate the bandgap energy, emission wavelength, and aluminum mole fraction for two Ga1-xAlxAs LEDs. 2. Derive an expression for the external quantum efficiency of a planar LED based on Fresnel reflection and total internal reflection at the output facet. 3. Calculate the internal quantum efficiency, internal power level, and power emitted for an InGaAsP LED given the radiative and nonradiative recombination times and refractive index. 4. Calculate the 3-dB optical and electrical bandwidths for an LED with a given minority carrier lifetime.

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Mir Sameer Hassan
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337 views

Tutorial Optical Sources and Detectors

This document provides 11 tutorial problems related to optical sources and detectors: 1. Calculate the bandgap energy, emission wavelength, and aluminum mole fraction for two Ga1-xAlxAs LEDs. 2. Derive an expression for the external quantum efficiency of a planar LED based on Fresnel reflection and total internal reflection at the output facet. 3. Calculate the internal quantum efficiency, internal power level, and power emitted for an InGaAsP LED given the radiative and nonradiative recombination times and refractive index. 4. Calculate the 3-dB optical and electrical bandwidths for an LED with a given minority carrier lifetime.

Uploaded by

Mir Sameer Hassan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 5500: Tutorial 4 Optical Sources and Detectors

1. An engineer has two Ga1-xAlxAs LEDs: one has a bandgap energy of 1.540 eV and
other has x=0.015
a) Find the aluminium mole fraction x and the emission wavelength for the first
LED.
b) Find the bandgap energy and the emission wavelength of other LED.
(Hint : Use equation, Eg = 1.424 + 1.266x + 0.266x2 )

2. Show that the external quantum efficiency of a planar LED is given approximately by
ηext = n−1(n + 1)−2, where n is the refractive index of the semiconductor–air interface.
Consider Fresnel reflection and total internal reflection at the output facet. Assume
that the internal radiation is uniform in all directions.

3. A double hetrojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has


radiative and nonradiative recombination times of 25 ns and 90 ns respectively. The
drive current is 35 mA.
a) Find the internal quantum efficiency and the internal power level.
b) If the refractive index of Light source material is 3.5, find the power emitted from
the device.

4. Consider an LED having a minority lifetime of 5 ns. Find the 3-dB optical bandwidth
and the 3-dB electrical bandwidth.

5. The minority carrier recombination lifetime for an LED is 5 ns. When a constant dc
drive current is applied to the device the optical output power is 300 µW. Determine
the optical output power when the device is modulated with an rms drive current
corresponding to the dc drive current at frequencies of (a) 20 MHz; (b) 100 MHz.
1⁄
𝑃𝑒 (⍵) 1 2
Hint: Given = {1+(𝜔𝜏 )2 }
𝑃𝑒 (0) 𝑖

where Pe(ω) is the optical power output, ω is the angular frequency, Pdc is the dc drive
current and τi is the minority carrier lifetime.

6. Consider a Nd3+:YAG crystal with two energy levels separated by an energy


difference corresponding to a free-space wavelength λ0 = 1064 nm, with a Lorentzian
lineshape of width ∆γ = 120 GHz. The spontaneous lifetime is tsp = 1.2 ms and the
refractive index of ruby is n = 1.82. If N1 + N2 = Na = 1022 cm−3 . a. Determine the
population difference N = N2 − N1 and the attenuation coefficient at the line center
α(γ0) under conditions of thermal equilibrium (so that the Boltzmann distribution is
obeyed) at T = 300 K. (Remember that for Lorentzian line profile the g(ν0) = 2 /π∆ν )
b. What value should the population difference N assume to achieve a gain
−1
coefficient γ(λ0) = 0.5 cm at the central frequency (assuming equal absorption and
emission cross section) ?
c. How long should the crystal be to provide an overall gain of 4 at the central
frequency when γ(λ0) = 0.5 cm−1 ?
𝑐
7. Frequency spacing between modes of the laser is given by 𝜈 = 2𝑛𝑙 , but this equation
assumes that the refractive index of n is independent of wavelength.
a) Find the wavelength spacing between two modes when n depends on 𝜆.
b) If the group refractive index is 4.5 for GaAs at 850 nm, what is the mode spacing
for a 400 µm long laser.
c) If, at the half power point, 𝜆 − 𝜆o = 2 nm for a refractive index 3.7 of GaAs at 850
nm, what is the rms width 𝜎 of the gain spectrum?

8. A 250 µm long InGaAsP laser has an internal loss of 40 cm−1. It operates at 1.55 µm
in a single mode, with the refractive index of 3.4. Calculate the photon lifetime. What
is the transparency value of the electron population? Assume that the gain varies as G
= GN(N −N0) with GN = 6×103 s−1 and N0 = 1×108. Take carrier life time, τc as 20 ns.
Determine the 3-dB modulation bandwidth of laser.
Hint: The modulation bandwidth
1 1
f3dB ≈ 2𝜋 [𝜏 (𝐼/𝐼𝑡ℎ − 1)]0.5
𝑠𝑝 𝜏𝑝ℎ

where I is total current, Ith is threshold current. Consider bias current is twice the
threshold current.

9. An InGaAs based PIN photodiode has to be designed for 1650 nm with 1 GHz
bandwidth and 1 A/W responsivity. Find the following.
a. Quantum efficiency
b. Length of the intrinsic region
c. Transit time
d. Cross sectional area of PIN diode.
(Absorption coefficient 𝛼=1×105 m-1, drift velocity 𝑉𝑑𝑟 = 105 m/s, antireflection
coating at the surfaces and 𝜁 ≈ 1, εr = 10, series resistance R = 1 Ω).

10. Derive an expression for multiplicative factor of an APD. Consider a Si APD biased
at 100 V. Calculate the multiplication factor given the multiplication region is of
length 4.5 𝜇m. Assume 90% of voltage drops across multiplication region. Also
assume that the length of depletion region at the multiplication region is same as
length of multiplication region.
(Hint: Find the electric field across multiplication region and refer any standard text
book for finding corresponding ionization rate).

11. Consider a Si APD operating at 300 o K with a load resistance RL= 1000 ohm. For this
APD, assume the responsivity, R= 0.65 A/W and let x = 0.3.
(a) If dark current is neglected and 100 nW of optical power falls on the
photodetector, what is the minimum avalanche gain?
(b) What is the SNR of Be = 100 MHz?
(c) How does the SNR of this APD compare with the corresponding SNR of a Si pin
photodiode? Assume the leakage current is negligible.

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