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Semiconductor Devices and Circuits

The document discusses bipolar junction transistors (BJTs) and their operation. It covers the different configurations of BJTs including common base and common emitter. It explains how current flows through the transistor and is influenced by the base current. It also discusses key characteristics like input and output characteristics, alpha, biasing, and the breakdown region. The common emitter configuration is described as being useful for amplification applications.

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PRE-GAMERS INC.
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46 views16 pages

Semiconductor Devices and Circuits

The document discusses bipolar junction transistors (BJTs) and their operation. It covers the different configurations of BJTs including common base and common emitter. It explains how current flows through the transistor and is influenced by the base current. It also discusses key characteristics like input and output characteristics, alpha, biasing, and the breakdown region. The common emitter configuration is described as being useful for amplification applications.

Uploaded by

PRE-GAMERS INC.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Semiconductor Devices and Circuits

BJT
Transistor Operation

2 BJT-Introduction 03-Feb-18
 The emitter current is the sum of the collector and base currents.

 The collector current comprises two components—the majority


and the minority carriers.
 The minority-current component is called the leakage current and is
given the symbol I CO ( I C current with emitter terminal O pen).

3 BJT-Introduction 03-Feb-18
 The larger number of these majority carriers will diffuse
across the reverse-biased junction into the p -type material
connected to the collector terminal.
 For the reverse-biased diode the injected majority carriers
will appear as minority carriers in the n -type material.
4 BJT-Introduction 03-Feb-18
Common Base configurations

 The arrow in the graphic symbol defines the direction of emitter current
(conventional flow) through the device.
5 BJT-Introduction 03-Feb-18
Input characteristics of CB confg.
 The input characteristics
of reveal that for fixed
values of collector voltage
( V CB ), as the base-to-
emitter voltage increases,
the emitter current
increases in a manner that
closely resembles the
diode characteristics.

6 BJT-Introduction 03-Feb-18
Output characteristics of CB confg.

7 BJT-Introduction 03-Feb-18
Reverse saturation current

8 BJT-Introduction 03-Feb-18
Alpha (α)
 DC Mode In the dc mode the levels of IC and IE due to the
majority carriers are related by a quantity called alpha and defined
by the following equation.

where IC and IE are the levels of current at the point of operation.


The value of alpha ranges between 0.95 to 0.995 depending on the
thickness of the base region.

9 BJT-Introduction 03-Feb-18
 AC Mode For ac situations where the point of operation
moves on the characteristic curve, an ac alpha is defined by

10 BJT-Introduction 03-Feb-18
Biasing
 The proper biasing of the common-base configuration in the active
region can be determined quickly using the approximation IC ≈ IE
and assuming for the moment that IB=0 µA.

11 BJT-Introduction 03-Feb-18
Breakdown region
 When the applied voltage VCB increases there is a point where
the curves take a dramatic upswing, is due primarily to an
avalanche effect.
 The base-to-collector junction is reversed biased in the active
region, but there is a point where too large a reverse-bias
voltage will lead to the avalanche effect.
 The result is a large increase in current for small increases in
the base-to-collector voltage.
 The largest permissible base-to-collector voltage is labeled
BV CBO referred as V (BR)CBO.

12 BJT-Introduction 03-Feb-18
Common Emitter configuration

13 BJT-Introduction 03-Feb-18
14 BJT-Introduction 03-Feb-18
 In the active region of a common-emitter amplifier, the
base–emitter junction is forward-biased, whereas the
collector–base junction is reverse-biased.
 The active region of the common-emitter configuration can be
employed for voltage, current, or power amplification.

15 BJT-Introduction 03-Feb-18
16 BJT-Introduction 03-Feb-18

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