D44H Series (NPN),

D45HSeries (PNP)

Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as www.onsemi.com
output or driver stages in applications such as switching regulators,
converters and power amplifiers. 10 AMP COMPLEMENTARY
Features SILICON POWER
• Low Collector−Emitter Saturation Voltage TRANSISTORS 60, 80 VOLTS
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs PNP NPN

• These Devices are Pb−Free and are RoHS Compliant* COLLECTOR 2, 4 COLLECTOR 2, 4

MAXIMUM RATINGS 1 1
Rating Symbol Value Unit BASE BASE

Collector−Emitter Voltage VCEO Vdc

D44H8, D45H8 60 EMITTER 3 EMITTER 3
D44H11, D45H11 80
Emitter Base Voltage VEB 5.0 Vdc 4 MARKING
DIAGRAM
Collector Current − Continuous IC 10 Adc
Collector Current − Peak (Note 1) ICM 20 Adc
Total Power Dissipation PD W
@ TC = 25°C 70
@ TA = 25°C 2.0 TO−220 D4xHyyG
CASE 221A AYWW
Operating and Storage Junction TJ, Tstg −55 to +150 °C STYLE 1
Temperature Range 1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. D4xHyy = Device Code
x = 4 or 5
THERMAL CHARACTERISTICS yy = 8 or 11
A = Assembly Location
Characteristic Symbol Max Unit Y = Year
Thermal Resistance, Junction−to−Case RqJC 1.8 °C/W WW = Work Week
G = Pb−Free Package
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Maximum Lead Temperature for Soldering TL 275 °C
Purposes: 1/8″ from Case for 5 Seconds ORDERING INFORMATION

Device Package Shipping

D44H8G TO−220 50 Units/Rail

(Pb−Free)

D44H11G TO−220 50 Units/Rail

(Pb−Free)

D45H8G TO−220 50 Units/Rail

(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please D45H11G TO−220 50 Units/Rail
download the ON Semiconductor Soldering and Mounting Techniques
(Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 13 D44H/D
 D44H Series (NPN), D45H Series (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage D44H8, D45H8 VCEO(sus) 60 − − Vdc

(IC = 30 mAdc, IB = 0 Adc) D44H11, D45H11 80 − −

Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA

Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO − − 10 mA

ON CHARACTERISTICS
DC Current Gain hFE −
(VCE = 1.0 Vdc, IC = 2.0 Adc) 60 − −
(VCE = 1.0 Vdc, IC = 4.0 Adc) 40 − −

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 8.0 Adc, IB = 0.4 Adc) − − 1.0

Base−Emitter Saturation Voltage VBE(sat) − − 1.5 Vdc

(IC = 8.0 Adc, IB = 0.8 Adc)

DYNAMIC CHARACTERISTICS

Collector Capacitance Ccb pF

(VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series − 90 −
D45H Series − 160 −

Gain Bandwidth Product fT MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series − 50 −
D45H Series − 40 −

SWITCHING TIMES

Delay and Rise Times td + tr ns

(IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series − 300 −
D45H Series − 135 −

Storage Time ts ns
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series − 500 −
D45H Series − 500 −

Fall Time tf ns
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series − 140 −
D45H Series − 100 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 D44H Series (NPN), D45H Series (PNP)

1000 1000
VCE = 1 V VCE = 1 V

25°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

125°C
125°C

−40°C 25°C
100 100 −40°C

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain

1000 1000
VCE = 5 V VCE = 5 V
hFE, DC CURRENT GAIN

25°C hFE, DC CURRENT GAIN

125°C
125°C
25°C
100 −40°C 100 −40°C

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain

0.40 0.6
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

0.35
0.5
0.30
−40°C 0.4
0.25 −40°C
0.20 0.3
25°C
0.15 25°C 125°C
0.2
0.10 125°C
0.1
0.05
0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage

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 D44H Series (NPN), D45H Series (PNP)

1.2 1.4
VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

−40°C 1.2
1.0
−40°C
1.0
0.8
125°C
0.8
0.6 125°C
25°C 0.6
0.4 25°C
0.4

0.2 0.2

0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage

100 TA TC
IC, COLLECTOR CURRENT (AMPS)

PD, POWER DISSIPATION (WATTS)

50
30
20 1.0 ms
100 ms 3.0 60
10 10 ms
5.0
3.0 2.0 40
2.0 TC ≤ 70° C dc 1.0 ms TC
1.0 DUTY CYCLE ≤ 50%
0.5 1.0 20 TA
0.3 D44H/45H8
0.2 D44H/45H10,11
0.1 0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 120 140 160
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C)
Figure 9. Maximum Rated Forward Bias Figure 10. Power Derating
Safe Operating Area

1.0
0.7
RESISTANCE (NORMALIZED)

D = 0.5
r(t), TRANSIENT THERMAL

0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 11. Thermal Response

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 D44H Series (NPN), D45H Series (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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