Unijunction Transistor
Unijunction Transistor
Heavily-doped
RB2
RB1
B1
UJT CHARACTERISTICS
• Resistor RB1is shown as a variable resistor
• Its ohmic value depends on the amount of
emitter current flowing
• The internal resistance ratio of RB1 to RB2 is
called the intrinsic standoff ratio, η (eta)
RB1
• η = RB1 + RB2
UJT CHARACTERISTICS
• The amount of emitter voltage required to
switch the UJT on is called the standoff
voltage, VP
• It is found be multiplying the applied
voltage VBB, by η
• VP = ηVBB + VF