Hall Effect Sensor
Hall Effect Sensor
Hall Effect Sensor
Hall probe
A Hall probe contains an indium
compound semiconductor crystal such as
indium antimonide, mounted on an
aluminum backing plate, and encapsulated
in the probe head. The plane of the crystal
is perpendicular to the probe handle.
Connecting leads from the crystal are
brought down through the handle to the
circuit box.
Working principle
When a beam of charged particles passes
through a magnetic field, forces act on the
particles and the beam is deflected from a
straight path. The flow of electrons
through a conductor form a beam of
charged carriers. When a conductor is
placed in a magnetic field perpendicular to
the direction of the electrons, they will be
deflected from a straight path. As a
consequence, one plane of the conductor
will become negatively charged and the
opposite side will become positively
charged. The voltage between these
planes is called the Hall voltage.[2]
Materials
The key factor determining sensitivity of
Hall effect sensors is high electron
mobility. As a result, the following
materials are especially suitable for Hall
effect sensors:
Advantages
A Hall effect sensor may operate as an
electronic switch.
Disadvantages
Hall effect sensors provide much lower
measuring accuracy than fluxgate
magnetometers or magnetoresistance-
based sensors. Moreover, Hall effect
sensors drift significantly, requiring
compensation.
Applications
Position sensing
Sensing the presence of magnetic objects
(connected with the position sensing) is
the most common industrial application of
Hall effect sensors, especially those
operating in the switch mode (on/off
mode). The Hall effect sensors are also
used in the brushless DC motor to sense
the position of the rotor and to switch the
transistors in the right sequence.
Keyboard switch
References
1. Ramsden, Edward (2006). Hall-effect
sensors: theory and applications (2,
illustrated ed.). Elsevier. ISBN 0-7506-7934-
4.
2. Popović, R. S. (2004). Hall effect devices
(2, illustrated ed.). CRC Press. ISBN 0-7503-
0855-9.
3. Petruk, Oleg; Szewczyk, Roman; Ciuk,
Tymoteusz; et al. (2014). "Sensitivity and
Offset Voltage Testing in the Hall-Effect
Sensors Made of Graphene" . Advances in
Intelligent Systems and Computing.
Advances in Intelligent Systems and
Computing. Springer. 267: 631.
doi:10.1007/978-3-319-05353-0_60 .
ISBN 978-3-319-05352-3.
4. "Hall Effect Sensor Voltage Regulation
and Power Management" .
phareselectronics.com. Retrieved 26 May
2015.
5. "ZenFone 5 (A500CG)" . asus.com.
Retrieved 2 September 2017.
6. Petruk, O.; Szewczyk, R.; Salach, J.;
Nowicki, M. (2014). "Digitally Controlled
Current Transformer with Hall Sensor" .
Advances in Intelligent Systems and
Computing. Advances in Intelligent Systems
and Computing. Springer. 267: 641.
doi:10.1007/978-3-319-05353-0_61 .
ISBN 978-3-319-05352-3.
7. "Liquid Level Sensing: Measuring Liquid
Levels Using Hall Effect Sensors" (PDF).
infineon.com. 12 February 2009. Retrieved
2 September 2017.
Further reading
Baumgartner, A.; Ihn, T.; Ensslin, K.;
Papp, G.; Peeters, F.; Maranowski, K.;
Gossard, A. C. (2006). "Classical Hall
effect in scanning gate experiments".
Phys. Rev. B. 74 (16): 165426.
Bibcode:2006PhRvB..74p5426B .
doi:10.1103/PhysRevB.74.165426 .
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