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Experiment No: 4-Characteristics of BJT in CE Configuration Aim

This document describes an experiment to characterize a bipolar junction transistor (BJT) in a common emitter configuration. The experiment aims to study the input and output characteristics of the transistor by plotting graphs of base current (IB) vs base-emitter voltage (VBE) at constant collector-emitter voltages (VCE), and collector current (IC) vs VCE at constant IB. Procedures are provided to take readings and plot the input and output characteristic curves, which will be used to determine the input impedance, output admittance, current gain, and voltage gain of the transistor in the common emitter configuration.

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GANESH KUMAR B eee2018
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17K views6 pages

Experiment No: 4-Characteristics of BJT in CE Configuration Aim

This document describes an experiment to characterize a bipolar junction transistor (BJT) in a common emitter configuration. The experiment aims to study the input and output characteristics of the transistor by plotting graphs of base current (IB) vs base-emitter voltage (VBE) at constant collector-emitter voltages (VCE), and collector current (IC) vs VCE at constant IB. Procedures are provided to take readings and plot the input and output characteristic curves, which will be used to determine the input impedance, output admittance, current gain, and voltage gain of the transistor in the common emitter configuration.

Uploaded by

GANESH KUMAR B eee2018
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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15EC27C/15EE27C-SEMICONDUCTOR PHYSICS LABORATORY

Experiment No: 4- Characteristics of BJT in CE Configuration

AIM:

To study the input and output characteristics of a transistor in Common Emitter Configuration.

APPARATUS REQUIRED:

S.No Name Of The Equipment Quantity


(Numbers)
1. Transistor BC547 1
2. Resistors (1K ,33K ) 1
3. Bread board 1
Dual DC Regulated Power supply
4. 1
(0 – 30 V)
Ammeters (0 - 50mA) 1
5.
(0- 500µA) 1
Voltmeter (0-2V) 1
6.
(0-10V) 1
7. Connecting wires Required

FORMULA:

i) Input Impedance =(∆VBE/∆IB) Ω VCE =constant

ii) Output admittance =(∆ IC /∆ VCE) ℧ IB=constant

iii) Voltage Gain= (∆VCE /∆ VBE) IB=constant

iv) Current Gain=(∆IC/∆IB) VCE =constant

VBE- Base-Emitter Voltage

VCE-Collector-Emitter Voltage

IC-Collector Current

IB-Base Current
Symbol of Transistor

CIRCUIT DIAGRAM:
THEORY:

Bipolar junction transistor (BJT) is a three terminal semiconductor device in which the
operation depends on the interaction of both majority and minority charge carriers. The material
is doped to form three regions p, n and p so as to get p-n-p transistor or n, p and n to get n-p-n
transistor. The terminals are Base, Emitter and Collector. Emitter is heavily doped so that it can
inject a large number of charge carriers into the base. The base region is thin or lightly doped. It
passes most of the injected charge carriers from the emitter into collector. The region of collector
is moderately doped.
The three terminals combine to form two junctions J 1 and J2 of the transistor. The
junction J1 is known as Emitter-Base junction and junction J2 is known as Collector-Base
Junction. Each junction acts as a p-n junction diode. The application of suitable dc voltages
across the transistor terminals is called biasing. Each junction of a transistor may be forward
biased or reverse biased independently. In this configuration the emitter current is equal to the
sum of small base current and the large collector current. i.e. IE = IC + IB.
In CE configuration, emitter is common terminal for both input and output. This common
emitter configuration is an inverting amplifier circuit. Here the input is applied between base-
emitter region and the output is taken between collector and emitter terminals. In this
configuration the input parameters are VBE and IB and the output parameters are VCE and IC.
The input characteristics resemble that of a forward biased diode, since the Base-Emitter
junction of the transistor is forward biased. IB increases less rapidly with VBE. Therefore input
resistance of CE circuit is higher than that of CB circuit.
The output characteristics are drawn between Ic and VCE at constant IB. The collector
current varies with VCE upto few volts only. After this the collector current becomes almost
constant, and independent of VCE. The value of VCE up to which the collector current changes
with VCE is known as Knee voltage. The transistor always operated in the region above Knee
voltage, IC is always constant and is approximately equal to IB.
The current amplification factor of CE configuration is given by β = ΔIC /ΔIB. This type of
configuration is mostly used in the applications of transistor based amplifiers.

Junction J1 Junction J2 Transistor Condition

FB RB Active Region

RB RB Cut-off Region

FB FB Saturation Region
PROCEDURE:

a) Input Characteristics:

1. Connect the circuit as per the circuit diagram.


2. For plotting the input characteristics the output voltage VCE is kept constant at 0V and
for different values of VBE, note down the values of IB.
3. Repeat the above step by keeping VCE at 3V and 5V.
4. Tabulate all the readings.
5. Plot the graph between VBE on x-axis and IB on y-axis for constant VCE.
b) Output Characteristics:

1. Connect the circuit as per the circuit diagram.


2. For plotting the output characteristics, the input current IB is kept constant at 20μA
and for different values of VCE note down the values of IC.
3. Repeat the above step by keeping IB at 40μA and 60μA.
4. Tabulate all the readings.
5. Plot the graph between VCE on x-axis and IC on y-axis for constant IB.
Table-1 Input Characteristics:

VCE=0V VCE=5V
S.NO
VBE (V) IB (µA) VBE (V) IB (µA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.
Model Graph for Input Characteristics:

Table-2 Output Characteristics:

IB=0 µA IB=20 µA IB=40 µA


S.NO
VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.
Model Graph for Output Characteristics:

RESULT:

The transistor characteristics of Common Emitter configuration parameters are studied.

(i) Input Impedance=…………….Ω

(ii) Output admittance=……………℧

(iii)Current gain=……………

(iv) Voltage Gain=……………..

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