Ese 570 Mos Inverters Static Characteristics: Kenneth R. Laker, University of Pennsylvania, Updated 13feb12 1
Ese 570 Mos Inverters Static Characteristics: Kenneth R. Laker, University of Pennsylvania, Updated 13feb12 1
Ese 570 Mos Inverters Static Characteristics: Kenneth R. Laker, University of Pennsylvania, Updated 13feb12 1
CHARACTERISTICS
Logic “0” = 0 V
Logic “1” = VDD V
VOL ≥ 0
VDD
VDD
0
VOL
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 VT0n 3
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 4
Slope of VTC
or
inverter gain
(oC)
(oC)
Tj = Ta + ΘP
Θ -> Thermal Resistance (oC/W)
P → Pstatic, Pdynamic (W)
Pstatic = VDD ID
V DD
P static= [ I D V in =V OL I D V in =V OH ]
2
Minimum area nMOS, pMOS transistor layouts limited by design rules
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 6
Minimum Area MOS Transistor Layouts
6 3 4
3
4 14
2
5 2 5
2 2
Area=24∗14 =336
kn'
kn' = KPn
A
C
VDD
Vin = VDD
implies
-1
VIL
@ Vin = VIL
VIH
0 VDD
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 VT0n 16
Take Limit as knRL -> ∞
-> VT0n
-> VT0n
-> VT0n
-> 0
Vout
VDD
knRL -> ∞
semi-ideal VTC
Vin
0 VT0n VDD
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 17
1
V DD
P static average= [ I D V in =V OL I D V in =V OH ]
2
P(Vin = “0”) = 0
Vout = VOL
ID(Vin = “1”) = IL =
Pstatic (average)
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 18
Multiplying by RL
W 30 x 2V
10 −6
W
DD −V OL 25−0.2
R
5−0.2=
L = ' R 2
=
[25−10.2−0.2
2
−6 ] 2
L k n 2V
2 DD−VLT0nV OL −V OL 30 x 10 25−10.2−0.2
L
W
R L=2.05 x 105 NO UNIQUE W/L, RL
L
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 19
W 5
R L =2.05 x 10
L
V DD V DD −V OL
P static average =
2 RL
VSB,L ≠ 0
VSB,d
VSB,L
IDn = IDp
V th
V th−V T0n
V out
=∞ (iff λ = 0)
V in
-1
V th V DD
-VT0n
V IL V IH
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 29
IDn = IDp = 0
0=
IDn = IDp = 0
=0
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 30
IDn = IDp
Eq.(1)
V (-1)
' VIL '
k W
n k W p
IL d V out
2V in −V T0n = [2V out −V DD 2V in −V DD −V T0p ]
2 L n 2 L p d V in
d V out (-1)
¿[−2V out −V DD ]
d V in
Eq.(2)
SOLVE Eq. (1) and Eq. (2) for Vout and VIL or use simulation.
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 32
IDn = IDp
Eq.(4)
SOLVE Eq. (3) and Eq. (4) for Vout and VIH or use simulation.
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 34
IDn = IDp
Eq.(5)
V th =
V T0n
1
kR
V DD V T0p
Eq.(5)
Eq.(5)
1
1
kR
2 Important design
V DD V T0p −V th
Solving Eq.(5) for kR k R =
V th −V T0n
Eq. for CMOS
inverter VTC.
1
If Vth is ideal Vth
set to V th =V th ideal = 2 V DD
0.5 V DD V T0p 2
k R =
0.5 V DD −V T0n
Symmetric CMOS Inverter
If Vth(ideal) and VT0n = - VT0p = VT0
If, also k R symetric =1
1 p W p
=
k R n W n
where Ln = Lp
Vth (volts)
1/kR
V th =
V T0n
1
kR
V DD V T0p
VDD = 5V; VT0n = - VT0p = 1 V
1
1
kR
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 38
Symmetric CMOS inverter Vth(ideal) and VT0n = - VT0p = VT0 => k R symetric =1
W / L p ≈2.52 W / Ln
Eq.(1)
1
Eq.(2) => V IL =V out − 2 V DD
Substitute V out =V IL 1 V DD , V = V and Sym-Inv Cond. into Eq.(1), i.e.
2 in IL
V DD
5 2 3 2
NM H =V OH −V IH =V DD − V DD − V T0 = V DD V T0
8 8 8 8
0 3 2 3 2
NM L =V IL −V OL =V IL = V DD V T0 = V DD V T0
8 8 8 8
RECALL
1. NMH, NML > VDD/2 = 1.25 V
2. Ideal NM => NMH = NML = 2.5 V > VDD/2
Pstatic = 0
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 42
If the inverter cell is part of a
standard cell library, it will adhere Smaller Area
to the cell layout protocols. Layout
Pstatic > 0
Kenneth R. Laker, University of Pennsylvania, updated 13Feb12 44