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Graphene Oxide Apply To Interdigitated Back Contact Solar Cell

Graphene oxide was applied as a passivation layer on the back surface of an interdigitated back contact (IBC) solar cell. The negative charges of graphene oxide repel electrons and prevent electron-hole recombination at the surface, improving efficiency. Graphene oxide was sprayed onto the back of an IBC solar cell and the cell was tested, showing increases in short circuit current density, fill factor, and overall efficiency compared to an untreated cell. The results demonstrate that graphene oxide promotes higher efficiency for IBC solar cells by reducing surface recombination through its field effect passivation.

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0% found this document useful (0 votes)
57 views3 pages

Graphene Oxide Apply To Interdigitated Back Contact Solar Cell

Graphene oxide was applied as a passivation layer on the back surface of an interdigitated back contact (IBC) solar cell. The negative charges of graphene oxide repel electrons and prevent electron-hole recombination at the surface, improving efficiency. Graphene oxide was sprayed onto the back of an IBC solar cell and the cell was tested, showing increases in short circuit current density, fill factor, and overall efficiency compared to an untreated cell. The results demonstrate that graphene oxide promotes higher efficiency for IBC solar cells by reducing surface recombination through its field effect passivation.

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孫璟葆
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Graphene Oxide Apply to Interdigitated Back Contact

Solar Cell
Ching-Pao Sun, Yi-Chin Chen, Kuan-Yu Chen, Chu-Hsuan Lin*
National Dong Hwa University (No. 1, Sec. 2, Da Hsueh Rd., Shoufeng, Hualien 97401, Taiwan)
National Dong Hwa University ( No. 1, Sec. 2, Da Hsueh Rd., Shoufeng, Hualien 97401, Taiwan)
[email protected]
Fig. 2b Coating graphene oxide on the back of IBC solar cell.
Abstract: Use graphene oxide as the (Back view)
passivation layer for Interdigitated back 2. Paper review and discussion
contact solar cell on the back surface can
promote the total efficiency. In [4], curbing the surface recombination through
Key Word—graphene oxide, solar cell, passivation, field effect passivation cause by graphene oxide, will
back contact also improve its efficiency graphene oxide is used as
1. Introduction passivation layer to contact with p-Si, the negative
charge carried by graphene oxide will repel electron,
Solar cell has been research for many years, in order let electron-hole pair escape from being recombined
to increase the efficiency, researchers designed many as the form of light or thermal.
different structure of solar cell such as surface In another paper [5], researchers used silicon nitride
passivation[1], anti-reflection layer[2]. In this to being the passivation layer on the front of n-type
research, we use graphene oxide(GO) to be the Si, in the other side, they don’t use SiNx as
passivation layer for interdigitated back contact(IBC) passivation layer to prevent the positive charge
(Figure.1) solar cell, this type of solar cell decreases carried by SiNx from forming an inversion layer with
the shading losses by putting both contacts at the p-Si and then decrease the conversion efficiency. But
rear[3], so the front surface can receives more light. in IBC structure, p-n junction was made on the back
Because graphene oxide is the material that have the surface, whether will we face the same problem, if
negative charges, we use it to coat at the rear of IBC we coat the graphene oxide on the back surface.
solar cell (Figure.2a,b), make use of the negative To know the question, our laboratory dried graphene
charges to exclude the electron from surface, prevent oxide on the n-Si and then measure the lifetime. The
photon-carrier from being recombined on the surface, result(Figure.3) demonstrate that graphene oxide can
therefore, we can increase the efficiency of the solar extend the lifetime. We suppose that it’s probably
cell. cause by the high charge density of graphene oxide.
[6] Thus, we think that graphene oxide is benefit to
IBC solar cell as the back surface passivation.

Fig. 1 typical IBC Si-Heterojunction structure solar cell.

Fig. 3 The lifetime of graphene oxide coating on n-type Si


compare with n-Si substrate.
Fig. 2a Coating graphene oxide on the back of IBC solar cell. 3. Research methods and steps
The production of graphite oxide[4]:
The production in our laboratory is the modified
Hummers method[7]. First mix graphite powder 2g
and KMnO4 powder 6g evenly, and then add the
powder into concentrated sulfuric acid(98%) 48ml,
maintain the temperature under 35℃, keep stirring
until 2 hours later, we add 100ml deionized water
then continue stir for 2 hours. After that, we slowly
pour in deionized water 280ml and Hydrogen Fig. 5a I-V curve for Normal IBC solar cell
peroxide, The degree of oxidation are depended on
the dose of H2O2. and then stirring for 12 hours.
Next, use filter paper to filter the solution, take the
remains on the paper add into the solution mix with
60ml hydrochloric acid and 600ml deionized water,
then filter again, after that, take the remains mix with
deionized water 600ml. Final, use filter paper to filter
the solution, air dried the remains, then ground into
powder.
In the step of add H2O2 and deionized water, add
4ml, 16ml, 64ml H2O2 respectively, will produce
different degree of oxidation, we named the graphene
oxide power depend on the degree of oxidation and
the dose of H2O2, respectively are GO1(4ml),
GO4(16ml), GO16(64ml). Fig. 5b I-V curve for Coating graphene oxide on the back of
The production of graphene oxide[4]: IBC solar cell
Stir 30mg graphite oxide and 20mg deionized water
for 10 minutes, then use ultrasonic cleaner for 30 (a)
minutes. Next we put the solution into centrifuge for Separation Voc(V) Jsc(mA/cm2) FF (%)
30 minutes and the rotating speed is 4000 rpm, take
the solution part to ultrasonic cleaner until 2 hours, Part.A 0.625 16.08 0.72 13.42
we put the solution into centrifuge for 15 min and the Part.B 0.622 15.87 0.67 12.63
rotating speed is 10000 rpm. After that, the solution
part is our need. Part.C 0.631 16.33 0.74 14.17
Coating graphene oxide on the back of IBC solar
(b)
cell:
We heat the IBC solar cell up to 100℃, spray the GO Voc Jsc(mA/cm2) FF (%)
graphene oxide solution on the back of IBC solar
cell, and then wait the substrate dry. Part.A 0.631 16.98 0.72 14.28

4. Experiment result Part.B 0.627 16.86 0.66 13.48

To make the measure easier, we use laser to separate Part.C 0.635 17.07 0.77 15.62
the IBC solar cell into three parts, which is A, B, C Fig. 6a.b Voc, Jsc Field factor, efficiency (a)Normal IBC solar
parts in Figure.4, then we measure the I-V curve cell (b) Coating graphene oxide on the back of IBC solar cell
respectively.
As we see (Figure. 5a.b and 6a.b), We find graphene
oxide can promote the efficiency of IBC solar cell.
5. Reference
[1] Meijun Lu,Stuart Bowden, Ujjwal Das, and Robert Birkmire
“Interdigitated back contact silicon heterojunction solar cell and
the effect of front surface passivation” APPLIED PHYSICS
LETTERS 91, 063507 2007
[2] Yun-Ju Lee, Douglas S. Ruby, David W. Peters, Bonnie B.
McKenzie, and Julia W. P. Hsu “ZnO Nanostructures as Efficient
Antireflection Layers in Solar Cells” Sandia
National Laboratories, Albuquerque, New Mexico 87185 Received
Fig. 4 Graphene oxide coating on the back of IBC solar cell March 4, 2008; Revised Manuscript Received March 26, 2008
[3] Michael D. Lammert, Richard J Schwartz, Member, IEEE “The
Interdigitated Back Contact Solar Cell: A Silicon Solar Cell for
Use in Concentrated Sunlight"IEEE Transactions on electron
devices, Vol. ED-24, NO.4, April 1977
[4] Chen Kuan-Yu “Passivation of pnsingle crystal silicon solar
cell vianegative fixed charges of grapheme oxide.” Department of
Opto-electronic engineering, National Dong Hwa University ,2015
[5] Evan Franklin, Kean Fong, Keith McIntosh, Andreas Fell,
Andrew Blakers, Teng Kho, Danie Walter, Da Wang, Ngwe Zin,
Matthew Stocks, Er-Chien Wang, Nicholas Grant, Yimao Wan,
Yang Yang, Xueling Zhang, Zhiqiang Feng and Pierre J. Verlinden
“Design, fabrication and characterisation of a 24.4% efficient
interdigitated back contact solar cell” 29TH EU PVSEC,
AMSTERDAM, THE NETHERLANDS 2014
[6] B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M.
M. Kessels “On the c-Si surface passivation mechanism by the
negative-chargedielectric Al2O3” JOURNAL OF APPLIED
PHYSICS 104, 113703 (2008)
[7] Hummers WS, Offeman RE: “Preparation of graphitic oxide.”
J Am Chem Soc 1958, 80:1339

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