CEP50N06/CEB50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired. D

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 50 A
Drain Current-Pulsed a
IDM 150 A
Maximum Power Dissipation @ TC = 25 C 131 W
PD
- Derate above 25 C 0.88 W/ C
Single Pulsed Avalanche Energy d EAS 225 mJ
Single Pulsed Avalanche Current d IAS 50 A
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 1.14 W/ C
Thermal Resistance, Junction-to-Ambient RθJA 62.5 W/ C

Rev 2. 2007.March
Specification and data are subject to change without notice . http://www.cetsemi.com
1
 CEP50N06/CEB50N06
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units 4

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 V
Zero Gate Voltage Drain Current IDSS VDS = 54V, VGS = 0V 1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 50A 17 22 mΩ
On-Resistance
Forward Transconductance gFS VDS = 10V, ID = 25A 19 S
Dynamic Characteristics c

Input Capacitance Ciss 1420 pF

VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 400 pF
Reverse Transfer Capacitance Crss 50 pF
Switching Characteristics c
Turn-On Delay Time td(on) 17.2 34.4 ns
Turn-On Rise Time tr VDD = 30V, ID = 48A, 5 10 ns
VGS = 10V, RGEN = 7.5Ω
Turn-Off Delay Time td(off) 32.5 65 ns
Turn-Off Fall Time tf 10 20 ns
Total Gate Charge Qg 28.2 37.5 nC
VDS = 48V, ID = 48A,
Gate-Source Charge Qgs VGS = 10V 8.5 nC
Gate-Drain Charge Qgd 7 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS 50 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 50A 1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 90µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C

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 CEP50N06/CEB50N06
120 125
VGS=10V 25 C
100 VGS=8V
100
ID, Drain Current (A)

ID, Drain Current (A)

80
VGS=7V 75
60
50
VGS=6V
40

VGS=5V 25
20
TJ=125 C -55 C
VGS=4V
0 0
0 1 2 3 4 5 6 0 2 4 6 8 10

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

3000 2.6
ID=50A
RDS(ON), On-Resistance(Ohms)

VGS=10V
2500 2.2
C, Capacitance (pF)

RDS(ON), Normalized

2000 1.8

Ciss
1500 1.4

1000 1.0

500 Coss 0.6

Crss
0 0.2
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

ID=250µA
IS, Source-drain current (A)

1.2
1
1.1 10
VTH, Normalized

1.0

0.9
0
10
0.8

0.7

-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 1.5 1.8

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEP50N06/CEB50N06
10 V =48V
VGS, Gate to Source Voltage (V)

DS RDS(ON)Limit

8
ID=48A
2
4

ID, Drain Current (A)

10 100µs

6 1ms
10ms
100ms
4 10
1 DC

2 TC=25 C
TJ=175 C
0 Single Pulse
0 10
0 10 20 30 40 0 1 2
10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

0
Transient Thermal Impedance

10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
t1
0.05 t2
0.02
1. RθJC (t)=r (t) * RθJC
0.01 2. RθJC=See Datasheet
Single Pulse 3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve