2SA1972

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1972
High-Voltage Switching Applications
Unit: mm

• High breakdown voltage: VCEO = −400 V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −400 V

Collector-emitter voltage VCEO −400 V
Emitter-base voltage VEBO −7 V
DC IC −0.5
Collector current A
Pulse ICP −1
Base current IB −0.25 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C JEDEC TO-92MOD

Note1: Using continuously under heavy loads (e.g. the application of high JEITA ―
temperature/current/voltage and the significant change in TOSHIBA 2-5J1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

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 2SA1972
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −400 V, IE = 0 ― ― −10 μA

Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −1 μA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −400 ― ― V
hFE (1) VCE = −5 V, IC = −20 mA 140 ― 450
DC current gain
hFE (2) VCE = −5 V, IC = −100 mA 140 ― 400
Collector-emitter saturation voltage VCE (sat) IC = −100 mA, IB = −10 mA ― −0.4 −1.0 V
Base-emitter saturation voltage VBE (sat) IC = −100 mA, IB = −10 mA ― −0.76 −0.9 V
Transition frequency fT VCE = −5 V, IC = −50 mA ― 35 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 18 ― pF

Turn-on time ton Output ― 0.2 ―

IB1
20 μs Part No.

2 kΩ
IB2
IB2
Switching time Storage time tstg ― 2.3 ― μs
IB1

VCC = −200 V

Fall time tf IB1 = 10 mA, IB2 = 20 mA, ― 0.2 ―

duty cycle ≤ 1%

Marking

A1972 Part No. (or abbreviation code)

Lot No.

Note2

Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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 2SA1972

IC – VCE IC – VBE
−500 −500
−100 −60 −40 −20 −10 Common emitter
−5 VCE = −5 V
−80
−400 −400

(mA)
(mA)

−2

Collector current IC
Collector current IC

−300 −300

−1

−200
Ta = 100°C 25
−55
IB = −0.5 mA

−100 −100
Common emitter
Ta = 25°C
0 0
0 −2 −4 −6 −8 −10 −12 −14 −16 −18 −20 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2

Collector voltage VCE (V) Collector-emitter voltage VBE (V)

hFE – IC VCE (sat) – IC

1000 −30
Common emitter
500
Collector-emitter saturation voltage

100 IC/IB = 10
−10
300
25 −5
DC current gain hFE

−3
VCE (sat) (V)

100 Ta = −55°C

50 −1

30 −0.5
25
−0.3
100
10
Common emitter −0.1 Ta = −55°C
5 VCE = −5 V −0.05
3
−1 −10 −100 −1000 −0.03
−1 −10 −100 −1000
Collector current IC (mA)
Collector current IC (mA)

Safe Operating Area

−3000
300 μs*
IC max (pulsed)* 100 μs*
−1000
IC max (continuous)
10 μs*
(mA)

−300 100 ms*

VBE (sat) – IC
−10
10 ms*
Collector current IC

Common emitter −100

Base-emitter saturation voltage

−5 IC/IB = 10 DC operation 1 ms*

−3 Ta = 25°C
−30
VBE (sat) (V)

−1 −55
−10
*: Single nonrepetitive
−0.5
Ta = 100°C 25 pulse Ta = 25°C
−0.3 −3 Curves must be derated
linearly with increase in
temperature. VCEO max
−0.1 −1
−1 −10 −100 −500 −1 −3 −10 −30 −100 −300 −1000

Collector current IC (mA) Collector-emitter voltage VCE (V)

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 2SA1972

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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