® STSA1805
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
Ordering Marking Package
Code / Shipment
STSA1805 SA1805 TO-92 / Bulk
STSA1805-AP SA1805 TO-92 / Ammopack
■ VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
■ HIGH CURRENT GAIN CHARACTERISTIC
■ FAST-SWITCHING SPEED
APPLICATIONS:
■ EMERGENCY LIGHTING
TO-92
■ VOLTAGE REGULATORS
Bulk
■ RELAY DRIVERS
■ HIGH EFFICIENCY LOW VOLTAGE
SWITCHING APPLICATIONS
DESCRIPTION
The device is manufactured in NPN Planar INTERNAL SCHEMATIC DIAGRAM
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 150 V
V CEO Collector-Emitter Voltage (I B = 0) 60 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 5 A
I CM Collector Peak Current (t p < 5 ms) 15 A
IB Base Current 2 A
P tot Total Dissipation at T amb = 25 o C 1.1 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
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STSA1805
THERMAL DATA
o
R thj-amb Thermal Resistance Junction-Ambient Max 114 C/W
o
R thj-case Thermal Resistance Junction-case Max 83.3 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 40 V 0.1 µA
Current (I E = 0)
I EBO Emitter Cut-off Current V EB = 4 V 0.1 µA
(I C = 0)
V (BR)CBO Collector-Base I C = 100 µA 150 V
Breakdown Voltage
(I E = 0)
V (BR)CEO ∗ Collector-Emitter I C = 1 mA 60 V
Breakdown Voltage
(I B = 0)
V (BR)EBO Emitter-Base I E = 100 µA 7 V
Breakdown Voltage
(I C = 0)
V CE(sat) ∗ Collector-Emitter IC = 100 mA I B = 5 mA 50 mV
Saturation Voltage IC = 2A I B = 50 mA 150 300 mV
IC = 3A I B = 150 mA 200 400 mV
IC = 5A I B = 200 mA 600 mV
V BE(sat) ∗ Base-Emitter IC = 2 A I B = 100 mA 0.9 1.2 V
Saturation Voltage
h FE ∗ DC Current Gain I C = 100 mA V CE = 2 V 200 400
IC = 5 A V CE = 2 V 85
I C = 10 A V CE = 2 V 20
fT Transition frequency V CE = 10 V I C = 50 mA 150 MHz
C CBO Collector-Base V CB = 10 V f = 1 MHz 50 pF
Capacitance
RESISTIVE LOAD
t on Turn- on Time IC = 1 A V CC = 30 V 50 ns
ts Storage Time I B1 = - I B2 = 0.1 A 1.35 µs
tf Fall Time 120 ns
* Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
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Derating Curve DC Current Gain
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Base-Emitter On Voltage
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Switching Times Resistive Load Switching Times Resistive Load
Switching Times Resistive Load Switching Times Inductive Load
Switching Times Inductive Load
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Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
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STSA1805
TO-92 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094
S1 1.14 1.52 0.045 0.059
W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
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STSA1805
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1 4.80 0.189
T 3.80 0.150
T1 1.60 0.063
T2 2.30 0.091
d 0.48 0.019
P0 12.50 12.70 12.90 0.492 0.500 0.508
P2 5.65 6.35 7.05 0.222 0.250 0.278
F1,F2 2.44 2.54 2.94 0.096 0.100 0.116
delta H -2.00 2.00 -0.079 0.079
W 17.50 18.00 19.00 0.689 0.709 0.748
W0 5.70 6.00 6.30 0.224 0.236 0.248
W1 8.50 9.00 9.25 0.335 0.354 0.364
W2 0.50 0.020
H 18.50 20.50 0.728 0.807
H0 15.50 16.00 16.50 0.610 0.630 0.650
H1 25.00 0.984
D0 3.80 4.00 4.20 0.150 0.157 0.165
t 0.90 0.035
L 11.00 0.433
I1 3.00 0.118
delta P -1.00 1.00 -0.039 0.039
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – All Rights reserved
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