SILICON SWITCHING

NPN TRANSISTOR

2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching

• Hermetic LCC3 Ceramic package.

• Variant B to MIL-PRF-19500/255 outline

• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

VCBO Collector – Base Voltage 75V
VCEO Collector – Emitter Voltage 50V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 0.8A
PD Total Power Dissipation at TA = 25°C 500mW
Derate Above 25°C 2.86mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C

THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA(1) Thermal Resistance, Junction To Ambient 325 °C/W
RθJSP(IS) (2)
Thermal Resistance Junction to Solder Pads 110 °C/W

(1)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air.
(2)
Infinite sink mount to PCB.

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9192
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Issue 1
Page 1 of 3
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A 2N2222AC3B 2N2222AC3C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ. Max. Units
V(BR)CEO
(1) Collector-Emitter IC = 10mA IB = 0 50 V
Sustaining Voltage
ICES Collector-Emitter VCE = 50V 50 nA
Cut-Off Current
IE = 0 VCB = 75V 10 µA
ICBO Collector-Base IE = 0 VCB = 60V 10 nA
Cut-Off Current
TA = 150°C 10 µA
IC = 0 VEB = 4V 10 nA
IEBO Emitter Cut-Off Current
VEB = 6V 10 µA

ON CHARACTERISTICS
(1) Collector-Emitter IC = 150mA IB = 15mA 0.3
VCE(Sat) V
Saturation Voltage IC = 500mA IB = 50mA 1.0
IC = 150mA IB = 15mA 0.6 1.2
VBE(Sat)
(1) Base-Emitter
V
Saturation Voltage IC = 500mA IB = 50mA 2.0
IC = 0.1mA VCE = 10V 50
IC = 1.0mA VCE = 10V 75 325
IC = 10mA VCE = 10V 100
hFE DC Current Gain -
TA = -55°C 35
(1)
IC = 150mA VCE = 10V 100 300
(1)
IC = 500mA VCE = 10V 30

SMALL SIGNAL CHARACTERISTICS

Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8
pF
Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 25
Magnitude of small-
|hfe| signal, short-circuit IC = 20mA VCE = 20V f = 100MHz 2.5 -
forward current transfer
ratio
hfe Small Signal Current IC = 1.0mA VCE = 10V f = 1.0kHz 50 -
Gain

Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9192
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Issue 1
Page 2 of 3
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A 2N2222AC3B 2N2222AC3C
SWITCHING CHARACTERISTICS
Symbols Parameters Test Conditions Min. Typ. Max. Units
ton Saturated Turn-on Time VCC = 30V 35
IB1 = 15mA ns
toff Saturated Turn-off Time IC = 150mA 300

MECHANICAL DATA
Dimensions in mm (inches)

5.59 ± 0.13 1.40 ± 0.15

(0.22 ± 0.005) (0.055 ± 0.006)

0.25 ± 0.03
(0.01 ± 0.001)

0.23 rad.
(0.025 ± 0.003)

(0.009)
0.64 ± 0.08

(0.05 ± 0.002)
(0.15 ± 0.005)

3 2
1.27 ± 0.05
3.81 ± 0.13

4 1 0.23 min.
(0.009)

1.02 ± 0.20 2.03 ± 0.20

(0.04 ± 0.008) (0.08 ± 0.008)

LCC3 (MO-041BA)
Underside View

Package Variant Table

Variant Pad 1 Pad 2 Pad 3 Pad 4
A Collector N/C Emitter Base
B Collector N/C Base Emitter
C Collector Emitter N/C Base

N/C = No Connection

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9192
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Issue 1
Page 3 of 3