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    Briefly The Shapes of The Graphs. (2-3 Sentences)

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    Maciel Gomes Dos Santos
    1) The document provides a problem set on pn junctions, bipolar junction transistors (BJTs), and metal-oxide-semiconductor (MOS) devices. It includes 5 questions - the first 2 questions cover pn junctions and BJTs, while questions 3-5 focus on MOS structures and devices. 2) For a pnp BJT, the problem asks the student to sketch equilibrium minority carrier distributions and apply biases to determine the operating regime and resulting currents. 3) One question examines an ideal MOS structure and asks the student to sketch band diagrams and carrier distributions under different bias conditions.

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    Briefly The Shapes of The Graphs. (2-3 Sentences)

    Uploaded by

    Maciel Gomes Dos Santos
    26 views2 pages
    1) The document provides a problem set on pn junctions, bipolar junction transistors (BJTs), and metal-oxide-semiconductor (MOS) devices. It includes 5 questions - the first 2 questions cover pn junctions and BJTs, while questions 3-5 focus on MOS structures and devices. 2) For a pnp BJT, the problem asks the student to sketch equilibrium minority carrier distributions and apply biases to determine the operating regime and resulting currents. 3) One question examines an ideal MOS structure and asks the student to sketch band diagrams and carrier distributions under different bias conditions.

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    1) The document provides a problem set on pn junctions, bipolar junction transistors (BJTs), and metal-oxide-semiconductor (MOS) devices. It includes 5 questions - the first 2 questions cover pn junctions and BJTs, while questions 3-5 focus on MOS structures and devices. 2) For a pnp BJT, the problem asks the student to sketch equilibrium minority carrier distributions and apply biases to determine the operating regime and resulting currents. 3) One question examines an ideal MOS structure and asks the student to sketch band diagrams and carrier distributions under different bias conditions.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views2 pages

    Briefly The Shapes of The Graphs. (2-3 Sentences)

    Uploaded by

    Maciel Gomes Dos Santos
    1) The document provides a problem set on pn junctions, bipolar junction transistors (BJTs), and metal-oxide-semiconductor (MOS) devices. It includes 5 questions - the first 2 questions cover pn junctions and BJTs, while questions 3-5 focus on MOS structures and devices. 2) For a pnp BJT, the problem asks the student to sketch equilibrium minority carrier distributions and apply biases to determine the operating regime and resulting currents. 3) One question examines an ideal MOS structure and asks the student to sketch band diagrams and carrier distributions under different bias conditions.

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    © All Rights Reserved
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    of 2

    3.

    15 Electrical, Optical and Magnetic Materials and Devices

    Prof. Caroline A. Ross

    Fall 2006

    Problem Set 3 pn junctions, BJTs and MOS


    Due: Wednesday Oct. 18, 2006
    Reference: Pierret chapers 10,15,16

    Note: The pn junction and BJT are included in Exam 1 on 11th Oct. Solutions to
    questions 1-2 will be posted on 4 Oct, and will not be graded. However, it is strongly
    recommended that you work on the problems for practice before looking at the solutions.
    Questions 3-5 on MOS are due Oct. 18th and will be graded.

    1. a) For a pn junction, draw the electron and hole concentrations vs distance outside the
    depletion region in the case of no bias, forward bias, and reverse bias, explaining
    briefly the shapes of the graphs. (2-3 sentences)

    b) Estimate the voltage you would need to apply to cause avalanche breakdown in a Si pn
    junction with ND in the n-side = NA in the p-side = 1015 cm-3. Assume that
    avalanche breakdown occurs at a field of 105 V cm-1, and state any other
    assumptions you make.

    c) A BJT can be used to detect light by allowing the light to fall on the base region. How
    could you bias the two junctions in the BJT to get a good response to light? For
    your biasing scheme, draw the band structure and explain where the current(s)
    flow.

    2. Consider a pnp bipolar junction transistor with an emitter doping level of 1018 cm-3, a
    base doping level of 1016 cm-3, and a collector doping level of 1015 cm-3. The cross-
    sectional area of this device is 10-7 cm2. The width of the base is WB = 5 um, and WB <
    LDB the minority carrier diffusion length in the base. Assume also that widths of the
    emitter and collector are much longer than minority carrier diffusion lengths in those
    regions.
    (a) Sketch the equilibrium minority carrier concentration vs distance along the
    transistor from the emitter to the collector, in every region except for the
    depletion regions.

    Voltages of VEB = .3 volts and VCB = -2 volts are now applied to the device.
    (b) What regime of operation is the device in? What will be the relative values of IE,
    IB, and IC, compared to one another?
    (c) Sketch minority carrier concentration vs distance within the device, given the
    applied biases. Quantitatively label maximum and minimum concentrations
    within the emitter, base, and collector.
    (d) Neglecting the length of the depletion region within the base, determine the
    current density flowing from the collector to the emitter, ICE.
    (e) If the polarity of VEB were reversed, how would ICE change (qualitatively)?
    3. An ideal MOS junction is shown below. Band bending has caused the fermi level to

    touch the intrinsic level at the Si/SiO2 interface.

    a) Sketch the charge buildup, the electrostatic potential, and the electric field inside the

    semiconductor vs. position.

    b) Do equilibrium conditions prevail inside the semiconductor? Sketch the electron

    concentration vs. distance inside the semiconductor.

    w
    E f,metal

    Ec
    E f,semi
    Ei

    Ev

    metal oxide semiconductor

    4. A MOSFET has the following structure:


    oxide
    G
    S D

    p+ n p+

    a) What happens when you apply a voltage VG to G (when S and D are grounded)?

    Consider both positive and negative voltages. Illustrate with a sketch of the MOS band

    diagram.

    b) What happens when you apply a negative voltage VD to D, for different values of VG

    (zero, positive and negative)? (assume S is grounded.) Draw plots of current ISD vs VD

    for different values of VG.

    5. A semiconductor-oxide-semiconductor (SOS) structure can be built similar to a MOS


    structure. You can assume that all the bands are flat in the SOS structure when the
    semiconductor is intrinsic, so it looks like this:
    intrinsic oxide intrinsic

    Ec
    Ef
    Ev

    a) Suppose now that one layer is p-type and the other is n-type. Draw the SOS band

    structure at equilibrium showing what is different compared to the picture above.

    b) Redraw the band structure under bias (in both directions).

    c) Explain what currents or carrier distributions might be expected in the device under

    these three bias conditions.

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