20N50
20N50
20N50
td(on) 28 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 ns
td(off) RG = 2 Ω (External), 55 ns
Dim. Millimeter Inches
tf 16 ns Min. Max. Min. Max.
A 4.7 5.3 .185 .209
Qg(on) 95 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 nC
b 1.0 1.4 .040 .055
Qgd 40 nC b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
RthJC 0.42 K/W C .4 .8 .016 .031
D 20.80 21.46 .819 .845
RthCK (TO-247) 0.25 K/W E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Source-Drain Diode Characteristic Values
Q 5.89 6.40 0.232 0.252
(TJ = 25°C, unless otherwise specified) R 4.32 5.49 .170 .216
Symbol Test Conditions min. typ. max. S 6.15 BSC 242 BSC
IS V GS = 0 V 24N50Q 24 A
26N50Q 26 A TO-268 Outline
t rr 250 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 µC
IRM 8 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
60 50
VGS=10V
TJ = 25OC VGS=10V
9V TJ = 125OC
9V
50 8V
8V
7V 40
7V
6V
ID - Amperes
40
ID - Amperes
6V
30
30
20 5V
20
5V 10
10
0 0
0 4 8 12 16 20 0 4 8 12 16 20
VDS - Volts VDS - Volts
2.8 2.4
VGS = 10V VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
2.0
ID = 26A
TJ = 125oC
2.0
1.6
1.6
ID = 13A
TJ = 25oC
1.2
1.2
0.8 0.8
0 10 20 30 40 50 60 25 50 75 100 125 150
ID - Amperes TJ - Degrees C
Fig.3 RDS(on) vs. Drain Current Fig.4 Temperature Dependence of Drain
to Source Resistance
30
50
IXF_26N50Q
25
IXF_24N50Q
40
ID - Amperes
20
ID - Amperes
30
15 TJ = 125oC TJ = 25oC
20
10
5 10
0
0
-50 -25 0 25 50 75 100 125 150
0 2 4 6 8
TC - Degrees C VGS - Volts
Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage
12 10000
f = 1MHz
10 VDS = 250 V
ID = 13 A
Capacitance - pF
Ciss
8 IG = 10 mA
VGS - Volts
Coss
6 1000
4
Crss
2
0 100
0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40
50
45
40
35
ID - Amperes
30
TJ = 125OC
25
20
TJ = 25OC
15
10
5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
Fig.9 Drain Current vs Drain to Source Voltage
1.00
D=0.5
R(th)JC - K/W
0.10 D=0.2
D=0.1
D=0.05
D=0.02
0.01 D=0.01
Single Pulse
0.00
10-5 10-4 10-3 10-2 10-1 100 101
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025