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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the 2SC2335 silicon NPN power transistor from SavantIC Semiconductor. The transistor is in a TO-220C package and is designed for high-voltage, high-speed power switching applications up to 400V. It has a maximum collector-emitter saturation voltage of 1V at 3A and switching times under 1.5μs. The document provides detailed ratings, characteristics, and package outline for the transistor.

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X'mix Đreamer
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304 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the 2SC2335 silicon NPN power transistor from SavantIC Semiconductor. The transistor is in a TO-220C package and is designed for high-voltage, high-speed power switching applications up to 400V. It has a maximum collector-emitter saturation voltage of 1V at 3A and switching times under 1.5μs. The document provides detailed ratings, characteristics, and package outline for the transistor.

Uploaded by

X'mix Đreamer
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2335

DESCRIPTION
·With TO-220C package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0µs(Max.)@IC=3.0A

APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter

PINNING

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 500 V

VCEO Collector-emitter voltage Open base 400 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 7 A

ICM Collector current-peak 15 A

IB Base current 3.5 A

PD Total power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -50~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-C Thermal resistance junction to case 3.125 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2335

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH 400 V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V

VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V

ICBO Collector cut-off current VCB=400V ;IE=0 10 µA

VCE=400V ;VBE(off)=-1.5V 10 µA
ICEX Collector cut-off current
TC=125 5.0 mA

IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

hFE-1 DC current gain IC=0.1A ; VCE=5V 20 80

hFE-2 DC current gain IC=1.0A ; VCE=5V 20 80

hFE-3 DC current gain IC=3.0A ; VCE=5V 10

Switching times

ton Turn-on time 1.0 µs


VCC=150V;IC=3.0A;
tstg Storage time IB1=-IB2=600mA; 2.5 µs
RL=50E
tf Fall time 1.0 µs

hFE-2 Classifications
M L K

20-40 30-60 40-80

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2335

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2335

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