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    Transistor Mosfet

    Uploaded by

    Flavin Medina
    The document provides specifications for the IRFZ44N N-channel MOSFET transistor made by INCHANGE Semiconductor. Key features include a maximum drain current of 49A, on-resistance of 0.032 ohms or less, and operating temperature range of -55 to 175 degrees Celsius. The transistor is designed for low voltage switching applications in power supplies and motor controls.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Transistor Mosfet

    Uploaded by

    Flavin Medina
    105 views2 pages
    The document provides specifications for the IRFZ44N N-channel MOSFET transistor made by INCHANGE Semiconductor. Key features include a maximum drain current of 49A, on-resistance of 0.032 ohms or less, and operating temperature range of -55 to 175 degrees Celsius. The transistor is designed for low voltage switching applications in power supplies and motor controls.

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    Transistor Mosfet canal N

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    The document provides specifications for the IRFZ44N N-channel MOSFET transistor made by INCHANGE Semiconductor. Key features include a maximum drain current of 49A, on-resistance of 0.032 ohms or less, and operating temperature range of -55 to 175 degrees Celsius. The transistor is designed for low voltage switching applications in power supplies and motor controls.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    105 views2 pages

    Transistor Mosfet

    Uploaded by

    Flavin Medina
    The document provides specifications for the IRFZ44N N-channel MOSFET transistor made by INCHANGE Semiconductor. Key features include a maximum drain current of 49A, on-resistance of 0.032 ohms or less, and operating temperature range of -55 to 175 degrees Celsius. The transistor is designed for low voltage switching applications in power supplies and motor controls.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor IRFZ44N

    FEATURES
    ·Drain Current –ID=49A@ TC=25℃
    ·Drain Source Voltage-
    : VDSS= 55V(Min)
    ·Static Drain-Source On-Resistance
    : RDS(on) = 0.032Ω(Max)
    ·Fast Switching

    DESCRIPTION
    ·Designed for low voltage, high speed switching applications in
    power supplies, converters and power motor controls, these
    devices are particularly well suited for bridge circuits where
    diode speed and commutating safe operating areas are critical
    and offer additional safety margin against unexpected voltage
    transients.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 55 V

    VGS Gate-Source Voltage-Continuous ±20 V

    ID Drain Current-Continuous 49 A

    IDM Drain Current-Single Pluse (tp≤10μs) 160 A

    PD Total Dissipation @TC=25℃ 94 W

    TJ Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W

    Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W

    isc website：www.iscsemi.cn 1
    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor IRFZ44N

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 25A 0.032 Ω

    IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

    VDS= 55V; VGS= 0 25


    IDSS Zero Gate Voltage Drain Current μA
    VDS= 55V; VGS= 0; Tj= 150℃ 250

    VSD Forward On-Voltage IS= 25A; VGS= 0 1.3 V

    isc website：www.iscsemi.cn 2

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