25Q16BSIG

FEATURES
◆ 16M-bit Serial Flash ◆ Program/Erase Speed
-2048K-byte -Page Program time: 0.7ms typical
-256 bytes per programmable page -Sector Erase time: 100ms typical
-Block Erase time: 0.3/0.4/0.8s typical
◆ Standard, Dual, Quad SPI -Chip Erase time: 16s typical
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆ Flexible Architecture
-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 -Sector of 4K-byte
-Block of 32/64/128K-byte
◆ High Speed Clock Frequency
-120MHz for fast read with 30PF load ◆ Low Power Consumption
-Dual I/O Data transfer up to 180Mbits/s -20mA maximum active current
-Quad I/O Data transfer up to 360Mbits/s -5uA maximum power down current

(1)
◆ Software/Hardware Write Protection ◆ Advanced security Features
-Write protect all/portion of memory via software -16-Bit Customer ID
-Enable/Disable protection with WP# Pin -Security Architecture
-Top or Bottom, Sector or Block selection
◆ Single Power Supply Voltage
◆ Minimum 100,000 Program/Erase Cycles -Full voltage range:2.7~3.6V
Note: 1.Please contact Gigadevice for details.

GENERAL DESCRIPTION
The GD25Q16 (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O
data is transferred with speed of 180Mbits/s and the Quad I/O & Quad output data is transferred with speed of
360Mbits/s.

CONNECTION DIAGRAM

CS# 1 8 VCC

SO 2 7 HOLD#
Top View
WP# 3 6 SCLK

VSS 4 5 SI

8–LEAD SOP/DIP

1
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

PIN DESCRIPTION
Pin Name I/O Description
CS# I Chip Select Input
SO (IO1) I/O Data Output (Data Input Output 1)
WP# (IO2) I/O Write Protect Input (Data Input Output 2)
VSS Ground
SI (IO0) I/O Data Input (Data Input Output 0)
SCLK I Serial Clock Input
HOLD# (IO3) I/O Hold Input (Data Input Output 3)
VCC Power Supply

BLOCK DIAGRAM

WP#(IO2) Write Control

Logic

Status
Write Protect Logic

Register
and Row Decode

Flash
High Voltage
HOLD#(IO3) Memory
Generators
SPI
SCLK Command &
Control Logic Page Address
Latch/Counter
CS#

SI(IO0) Column Decode And

256-Byte Page Buffer
SO(IO1)
Byte Address
Latch/Counter

2
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

MEMORY ORGANIZATION
Each device has Each block has Each sector has Each page has
2M 128/64/32K 4K 256 bytes
8K 512/256/128 16 - pages
512 32/16/8 - - sectors
16/32/64 - - - blocks

UNIFORM BLOCK SECTOR ARCHITECTURE

GD25Q16 64K Bytes Block Sector Architecture
Block Sector Address range

511 1FF000H 1FFFFFH

31 …… …… ……
496 1F0000H 1F0FFFH
495 1EF000H 1EFFFFH
30 …… …… ……
480 1E0000H 1E0FFFH
…… …… ……
…… …… …… ……
…… …… ……
…… …… ……
…… …… …… ……
…… …… ……
47 02F000H 02FFFFH
2 …… …… ……
32 020000H 020FFFH
31 01F000H 01FFFFH
1 …… …… ……
16 010000H 010FFFH
15 00F000H 00FFFFH
0 …… …… ……
0 000000H 000FFFH

3
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

DEVICE OPERATION
SPI Mode
Standard SPI
The GD25Q16 features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial
Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising
edge of SCLK and data shifts out on the falling edge of SCLK.

Dual SPI
The GD25Q16 supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast Read” (3BH
and BBH) commands. These commands allow data to be transferred to or from the device at two times the rate of the
standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1.

Quad SPI
The GD25Q16 supports Quad SPI operation when using the “Quad Output Fast Read”,” Quad I/O Fast Read”, “Quad
I/O Word Fast Read” (6BH, EBH, E7H) commands. These commands allow data to be transferred to or from the device at
four times the rate of the standard SPI. When using the Quad SPI command the SI and SO pins become bidirectional I/O
pins: IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3. Quad SPI commands require the non-volatile Quad
Enable bit (QE) in Status Register to be set.

Hold
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write
status register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being
low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge
of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during HOLD
operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and
then CS# must be at low.
Figure1. Hold Condition

CS#

SCLK

HOLD#

HOLD HOLD

4
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Data Protection
The GD25Q16 provide the following data protection methods:
◆ Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will
return to reset by the following situation:
-Power-Up
-Write Disable (WRDI)
-Write Status Register (WRSR)
-Page Program (PP)
-Sector Erase (SE)
-Block Erase (BE)
-Chip Erase (CE)
◆ Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, BP0) bits define the section of the memory
array that can be read but not change.
◆ Hardware Protection Mode: WP# going low to protected the BP0~BP4 bits and SRP0~1 bits.
◆ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep
Power-Down Mode command.
Table1. GD25Q16 Protected area size
Status Register Content Memory Content

BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion

X X 0 0 0 NONE NONE NONE NONE
0 0 0 0 1 31 1F0000H-1FFFFFH 64KB Upper 1/32
0 0 0 1 0 30 to 31 1E0000H-1FFFFFH 128KB Upper 1/16
0 0 0 1 1 28 to 31 1C0000H-1FFFFFH 256KB Upper 1/8
0 0 1 0 0 24 to 31 180000H-1FFFFFH 512KB Upper 1/4
0 0 1 0 1 16 to 31 100000H-1FFFFFH 1M Upper 1/2
0 1 0 0 1 0 000000H-00FFFFH 64KB Lower 1/32
0 1 0 1 0 0 to 1 000000H-01FFFFH 128KB Lower 1/16
0 1 0 1 1 0 to 3 000000H-03FFFFH 256KB Lower 1/8
0 1 1 0 0 0 to 7 000000H-07FFFFH 512KB Lower 1/4
0 1 1 0 1 0 to 15 000000H-0FFFFFH 1M Lower 1/2
X X 1 1 X 0 to 31 000000H-1FFFFFH 2M ALL
1 0 0 0 1 31 1FF000H-1FFFFFH 4KB Top Block
1 0 0 1 0 31 1FE000H-1FFFFFH 8KB Top Block
1 0 0 1 1 31 1FC000H-1FFFFFH 16KB Top Block
1 0 1 0 X 31 1F8000H-1FFFFFH 32KB Top Block
1 1 0 0 1 0 000000H-000FFFH 4KB Bottom Block
1 1 0 1 0 0 000000H-001FFFH 8KB Bottom Block
1 1 0 1 1 0 000000H-003FFFH 16KB Bottom Block
1 1 1 0 X 0 000000H-007FFFH 32KB Bottom Block

5
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Status Register
S15-S10 S9 S8 S7 S6 S5 S4 S3 S2 S1 S0
Reserved QE SRP1 SRP0 BP4 BP3 BP2 BP1 BP0 WEL WIP
The status and control bits of the Status Register are as follows:
WIP bit.
The Write In Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress.
When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0,
means the device is not in program/erase/write status register progress.
WEL bit.
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal
Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or
Erase command is accepted.
BP4, BP3, BP2, BP1, BP0 bits.
The Block Protect (BP4, BP3, BP2, BP1, BP0) bits are non-volatile. They define the size of the area to be software
protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command.
When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in
Table1).becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block
Protect (BP4, BP3, BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. The
Chip Erase (CE) command is executed, only if the Block Protect (BP2, BP1, BP0) bits are 0.
SRP1, SRP0 bits.
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP
bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time
programmable protection.
SRP1 SRP0 #WP Status Register Description
The Status Register can be written to after a Write Enable
0 0 X Software Protected
command, WEL=1.(Default)
WP#=0, the Status Register locked and can not be written to.
0 1 0 Hardware Protected

WP#=1, the Status Register is unlocked and can be written to

0 1 1 Hardware Unprotected
after a Write Enable command, WEL=1.
Status Register is protected and can not be written to again
1 0 X Power Supply Lock-Down(1)
until the next Power-Down, Power-Up cycle.
Status Register is permanently protected and can not be
1 1 X One Time Program
written to.
NOTE:
1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
QE bit.
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When
the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3
pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI operation if the WP# or HOLD#
pins are tied directly to the power supply or ground)

6
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

COMMANDS DESCRIPTION
All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the
first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, most
significant bit first on SI, each bit being latched on the rising edges of SCLK.
See Table2, every command sequence starts with a one-byte command code. Depending on the command, this
might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the
command sequence has been shifted in. For the command of Read, Fast Read, Read Status Register or Release from
Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. CS# can
be driven high after any bit of the data-out sequence is being shifted out.
For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable,
Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the
command is rejected, and is not executed. That is CS# must driven high when the number of clock pulses after CS# being
driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen
and WEL will not be reset.
Table2. Commands
Command Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes
Write Enable 06H
Write Disable 04H
Read Status Register 05H (S7-S0) (continuous)
Read Status Register-1 35H (S15-S8) (continuous)
Write Status Register 01H (S7-S0) (S15-S8)
Read Data 03H A23-A16 A15-A8 A7-A0 (D7-D0) (Next byte) (continuous)
Fast Read 0BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous)
(1)
Dual Output 3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous)
Fast Read
(2) (1)
Dual I/O BBH A23-A8 A7-A0 (D7-D0) (continuous)
(2)
Fast Read M7-M0
(3)
Quad Output 6BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous)
Fast Read
(5) (3)
Quad I/O EBH A23-A0 dummy (D7-D0) (continuous)
(4)
Fast Read M7-M0
(6) (3)
Quad I/O Word E7H A23-A0 dummy (D7-D0) (continuous)
(7) (4)
Fast Read M7-M0
Continuous Read Reset FFH
Page Program 02 H A23-A16 A15-A8 A7-A0 D7-D0 Next byte
Sector Erase 20H A23-A16 A15-A8 A7-A0
Block Erase(32K) 52H A23-A16 A15-A8 A7-A0
Block Erase(64K) D8H A23-A16 A15-A8 A7-A0
Block Erase(128K) D2H A23-A16 A15-A8 A7-A0
Chip Erase C7/60 H
Program/Erase 75H
Suspend
Program/Erase Resume 7AH
Deep Power-Down B9H
Release From Deep ABH dummy dummy dummy (ID7-ID0) (continuous)
Power-Down, And
Read Device ID
Release From Deep ABH
Power-Down

7
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Manufacturer/
90H dummy dummy 00H (M7-M0) (ID7-ID0) (continuous)
Device ID
High Performance Mode A3H dummy dummy dummy
Read Identification 9FH (M7-M0) (ID15-ID8) (ID7-ID0) (continuous)
NOTE:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
7. Fast Word Read Quad I/O Data: the lowest address bit must be 0.

Table of ID Definitions:
Operation Code M7-M0 ID15-ID8 ID7-ID0
9FH C8 40 15
90H C8 14
ABH 14

8
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Write Enable (WREN) (06H)

The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL)
bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE) and Write Status
Register (WRSR) command. The Write Enable (WREN) command sequence: CS# goes low  sending the Write Enable
command  CS# goes high.

Figure2. Write Enable Sequence Diagram

CS#

0 1 2 3 4 5 6 7
SCLK

Command
SI
06H
High-Z
SO

Write Disable (WRDI) (04H)

The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command sequence:
CS# goes lowSending the Write Disable command CS# goes high. The WEL bit is reset by following condition:
Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase
commands.
Figure3. Write Disable Sequence Diagram

CS#

0 1 2 3 4 5 6 7
SCLK

Command
SI
04H
High-Z
SO

Read Status Register (RDSR) (05H or 35H)

The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at
any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in
progress, it is recommended to check the Write In Progress (WIP) bit before sending a new command to the device. It is
also possible to read the Status Register continuously. For command code “05H”, the SO will output Status Register bits
S7~S0. he command code “35H”, the SO will output Status Register bits S15~S8.
Figure4. Read Status Register Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCLK

Command
SI
05H or 35H
S7~S0 or S15~S8 out S7~S0 or S15~S8 out
SO High-Z
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
MSB MSB

9
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Write Status Register (WRSR) (01H)

The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN)
command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S15~S10, S1 and S0 of the Status Register. CS# must
be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write Status Register (WRSR)
command is not executed. If CS# is driven high after eighth bit of the data byte, the QE and SRP1 bits will be cleared to 0.
As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write
Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3,
BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status
Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in
accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect
(WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is
not executed once the Hardware Protected Mode is entered.

Figure5. Write Status Register Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK

Command Status Register in

SI 01H 7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8
MSB High-Z
SO

Read Data Bytes (READ) (03H)

The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-in during
the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a
Max frequency fR, during the falling edge of SCLK. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an
Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure6. Read Data Bytes Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
SCLK

Command 24-bit address

SI
03H 23 22 21 3 2 1 0
MSB Data Out1 Data Out2
SO High-Z
7 6 5 4 3 2 1 0
MSB

10
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Read Data Bytes At Higher Speed (Fast Read) (0BH)

The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte
address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content,
at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The
first byte addressed can be at any location. The address is automatically incremented to the next higher address after each
byte of data is shifted out.
Figure7. Read Data Bytes at Higher Speed Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
SCLK

Command 24-bit address

SI
0BH 23 22 21 3 2 1 0

SO High-Z

CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Byte
SI 7 6 5 4 3 2 1 0
Data Out1 Data Out2
SO 7 6 5 4 3 2 1 0 7 6 5
MSB MSB

Dual Output Fast Read (3BH)

The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit being
latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO.
The command sequence is shown in followed Figure8. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out.
Figure8. Dual Output Fast Read Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
SCLK

Command 24-bit address

SI
3BH 23 22 21 3 2 1 0

SO High-Z

CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Clocks
SI 6 4 2 0 6 4 2 0 6
Data Out1 Data Out2
SO 7 5 3 1 7 5 3 1 7
MSB MSB

11
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Quad Output Fast Read (6BH)

The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit being
latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1
and IO0. The command sequence is shown in followed Figure9. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
Figure9. Quad Output Fast Read Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
SCLK

Command 24-bit address

SI(IO0) 6BH 23 22 21 3 2 1 0
SO(IO1) High-Z
WP#(IO2) High-Z
HOLD#(IO3) High-Z

CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Clocks
SI(IO0) 4 0 4 0 4 0 4 0 4

SO(IO1) 5 1 5 1 5 1 5 1 5

WP#(IO2) 6 2 6 2 6 2 6 2 6

HOLD#(IO3) 7 3 7 3 7 3 7 3 7
Byte1 Byte2 Byte3 Byte4

Dual I/O Fast Read (BBH)

The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input
the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit being latched in
during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The
command sequence is shown in followed Figure10. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. To ensure optimum
performance the High Performance Mode (HPM) command (A3H) must be executed once, prior to the Dual I/O Fast Read
command.
Dual I/O Fast Read With “Continuous Read Mode”
The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next
Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The
command sequence is shown in followed Figure11. If the “Continuous Read Mode” bits (M7-0) are any value other than
AXH, the next command requires the first BBH command code, thus returning to normal operation. A “Continuous Read
Mode” Reset command can be used to reset (M7-0) before issuing normal command.

12
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Figure10. Dual I/O Fast Read Sequence Diagram (M7-0= 0XH or not AXH)

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK

Command
SI(IO0) BBH 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0

SO(IO1) 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
A23-16 A15-8 A7-0 M7-0
CS#
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SCLK

SI(IO0) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6

SO(IO1) 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7
Byte1 Byte2 Byte3 Byte4

Figure11. Dual I/O Fast Read Sequence Diagram (M7-0= AXH)

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCLK

6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0

7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
A23-16 A15-8 A7-0 M7-0
CS#
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCLK

SI(IO0) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6

SO(IO1) 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7
Byte1 Byte2 Byte3 Byte4

13
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Quad I/O Fast Read (EBH)

The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the
3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, each
bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0,
IO1, IO2, IO3. The command sequence is shown in followed Figure12. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit
(QE) of Status Register (S9) must be set to enable for the Quad I/O Fast read command. To ensure optimum performance
the High Performance Mode (HPM) command (A3H) must be executed once, prior to the Quad I/O Fast Read command.
Quad I/O Fast Read With “Continuous Read Mode”
The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next
Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. The
command sequence is shown in followed Figure13. If the “Continuous Read Mode” bits (M7-0) are any value other than
AXH, the next command requires the first EBH command code, thus returning to normal operation. A “Continuous Read
Mode” Reset command can be used to reset (M7-0) before issuing normal command.
Figure12. Quad I/O Fast Read Sequence Diagram (M7-0= 0XH or not AXH)

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK

Command
SI(IO0) EBH 4 0 4 0 4 0 4 0 4 0 4 0 4

SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5

WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6

HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2

Figure13. Quad I/O Fast Read Sequence Diagram (M7-0= AXH)

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCLK

SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4

SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5

WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6

HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2

14
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Quad I/O Word Fast Read (E7H)

The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest
address bit (A0) must equal 0 and only 2-dummy clock. The command sequence is shown in followed Figure14. The first
byte addressed can be at any location. The address is automatically incremented to the next higher address after each
byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word
Fast read command. To ensure optimum performance the High Performance Mode (HPM) command (A3h) must be
executed once, prior to the Quad I/O Word Fast Read command.
Quad I/O Word Fast Read With “Continuous Read Mode”
The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the
next Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require the E7H command code.
The command sequence is shown in followed Figure15. If the “Continuous Read Mode” bits (M7-0) are any value other
than AXH, the next command requires the first E7H command code, thus returning to normal operation. A “Continuous
Read Mode” Reset command can be used to reset (M7-0) before issuing normal command.
Figure14. Quad I/O Word Fast Read Sequence Diagram (M7-0= 0XH or not AXH)

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK

Command
SI(IO0) E7H 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4

SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5

WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6

HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3

Figure15. Quad I/O Word Fast Read Sequence Diagram (M7-0= AXH)

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCLK

SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4

SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5

WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6

HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3

15
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Page Program (PP) (02H)

The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command.
The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address
bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data
that goes beyond the end of the current page are programmed from the start address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The
Page Program command sequence: CS# goes low  sending Page Program command  3-byte address on SI  at least
1 byte data on SI  CS# goes high. The command sequence is shown in Figure16. If more than 256 bytes are sent to the
device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly
within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested
addresses without having any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of
the last data byte has been latched in; otherwise the Page Program command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page
Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The
Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0)
is not executed.
Figure16. Page Program Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
SCLK

Command 24-bit address Data Byte 1

SI
02H 23 22 21 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB
CS#
2073

2075
2076

2078
2072

2074

2077

2079

40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK

Data Byte 2 Data Byte 3 Data Byte 256

SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB MSB

16
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Sector Erase (SE) (20H)

The Sector Erase (SE) command is for erasing the all data of the chosen sector. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered
by driving CS# low, followed by the command code, and 3-address byte on SI. Any address inside the sector is a valid
address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence.
The Sector Erase command sequence: CS# goes low  sending Sector Erase command  3-byte address on SI 
CS# goes high. The command sequence is shown in Figure17. CS# must be driven high after the eighth bit of the last
address byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven
high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the
Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected
by the Block Protect (BP4, BP3, BP2, BP1, BP0) bit (see Table1) is not executed.
Figure17. Sector Erase Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 29 30 31
SCLK

Command 24 Bits Address

SI
20H 23 22 2 1 0
MSB

32KB Block Erase (BE) (52H)

The 32KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE)
command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address
inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration
of the sequence.
The 32KB Block Erase command sequence: CS# goes low  sending 32KB Block Erase command  3-byte
address on SI  CS# goes high. The command sequence is shown in Figure18. CS# must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon
as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in
progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which
is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1) is not executed.
Figure18. 32KB Block Erase Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 29 30 31
SCLK

Command 24 Bits Address

SI
52H 23 22 2 1 0
MSB

17
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

64KB Block Erase (BE) (D8H)

The 64KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE)
command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address
inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration
of the sequence.
The 64KB Block Erase command sequence: CS# goes low  sending 64KB Block Erase command  3-byte
address on SI  CS# goes high. The command sequence is shown in Figure19. CS# must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon
as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in
progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which
is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1) is not executed.
Figure19. 64KB Block Erase Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 29 30 31
SCLK

Command 24 Bits Address

SI
D8H 23 22 2 1 0
MSB

128KB Block Erase (BE) (D2H)

The 128KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 128KB Block Erase (BE)
command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address
inside the block is a valid address for the 128KB Block Erase (BE) command. CS# must be driven low for the entire
duration of the sequence.
The 128KB Block Erase command sequence: CS# goes low  sending 128KB Block Erase command  3-byte
address on SI  CS# goes high. The command sequence is shown in Figure20. CS# must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the 128KB Block Erase (BE) command is not executed. As soon
as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in
progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset. A 128KB Block Erase (BE) command applied to a block
which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1) is not executed.

18
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Figure20. 128KB Block Erase Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 29 30 31
SCLK

Command 24 Bits Address

SI
D2H 23 22 2 1 0
MSB

Chip Erase (CE) (60/C7H)

The Chip Erase (CE) command is erased the all data of the chip. A Write Enable (WREN) command must previously
have been executed to set the Write Enable Latch (WEL) bit The Chip Erase (CE) command is entered by driving CS# Low,
followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence.
The Chip Erase command sequence: CS# goes low  sending Chip Erase command  CS# goes high. The
command sequence is shown in Figure21. CS# must be driven high after the eighth bit of the command code has been
latched in, otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase
cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL)
bit is reset. The Chip Erase (CE) command is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The Chip Erase
(CE) command is ignored if one or more sectors are protected.
Figure21. Chip Erase Sequence Diagram

CS#

0 1 2 3 4 5 6 7
SCLK

Command
SI
60H or C7H

Deep Power-Down (DP) (B9H)

Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode
(the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in
active use, since in this mode, the device ignores all Write, Program and Erase commands. Driving CS# high deselects the
device, and puts the device in the Standby Mode (if there is no internal cycle currently in progress). But this mode is not the
Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP)
command. Once the device has entered the Deep Power-Down Mode, all commands are ignored except the Release from
Deep Power-Down and Read Device ID (RDI) command. This releases the device from this mode. The Release from Deep
Power-Down and Read Device ID (RDI) command also allows the Device ID of the device to be output on SO.
The Deep Power-Down Mode automatically stops at Power-Down, and the device always Power-Up in the Standby
Mode. The Deep Power-Down (DP) command is entered by driving CS# low, followed by the command code on SI. CS#
must be driven low for the entire duration of the sequence.
The Deep Power-Down command sequence: CS# goes low  sending Deep Power-Down command  CS# goes
high. The command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the command code has

19
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it
requires a delay of tDP before the supply current is reduced to I CC2 and the Deep Power-Down Mode is entered. Any Deep
Power-Down (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects
on the cycle that is in progress.
Figure22. Deep Power-Down Sequence Diagram

CS#

0 1 2 3 4 5 6 7 tDP
SCLK

Command Stand-by mode Deep Power-down mode

SI
B9H

Release From Deep Power-Down Or High Performance Mode And Read Device ID (RDI) (ABH)
The Release from Power-Down or High Performance Mode / Device ID command is a multi-purpose command. It can be
used to release the device from the Power-Down state or High Performance Mode or obtain the devices electronic
identification (ID) number.
To release the device from the Power-Down state or High Performance Mode, the command is issued by driving the
CS# pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure23. Release from Power-Down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other
command are accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the
CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on
the falling edge of SCLK with most significant bit (MSB) first as shown in Figure23. The Device ID value for the GD25Q16
is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The command is
completed by driving CS# high.
When used to release the device from the Power-Down state and obtain the Device ID, the command is the same
as previously described, and shown in Figure23, except that after CS# is driven high it must remain high for a time
duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other
command will be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or
Write cycle is in process (when WIP equal 1) the command is ignored and will not have any effects on the current cycle.
Figure23. Release Power-Down Or High Performance Mode Sequence Diagram

CS#

0 1 2 3 4 5 6 7 t RES1
SCLK

Command
SI
ABH

Deep Power-down mode Stand-by mode

20
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Figure24. Release Power-Down/Read Device ID Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38
SCLK

Command 3 Dummy Bytes t RES2

SI ABH 23 22 2 1 0
MSB Device ID
SO High-Z
7 6 5 4 3 2 1 0
MSB
Deep Power-down Mode Stand-by Mode

Read Manufacture ID/ Device ID (REMS) (90H)

The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit
address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of
SCLK with most significant bit (MSB) first as shown in Figure25. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.

Figure25. Read Manufacture ID/ Device ID Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
SCLK

Command 24-bit address

SI
90H 23 22 21 3 2 1 0
SO High-Z

CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK

SI

Manufacturer ID Device ID
SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB

21
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Read Identification (RDID) (9FH)

The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two
bytes of device identification. The device identification indicates the memory type in the first byte, and the memory capacity
of the device in the second byte. Any Read Identification (RDID) command while an Erase or Program cycle is in progress,
is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be
issued while the device is in Deep Power-Down Mode.
The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is shifted in. This is
followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output, each bit being
shifted out during the falling edge of Serial Clock. The command sequence is shown in Figure26. The Read Identification
(RDID) command is terminated by driving CS# to high at any time during data output. When CS# is driven high, the device
is put in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and
execute commands.
Figure26. Read Identification ID Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCLK

SI 9FH
Manufacturer ID
SO 7 6 5 4 3 2 1 0
MSB
CS#
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCLK

SI

Memory Type ID15-ID8 Capacity ID7-ID0

SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB

High Performance Mode (HPM) (A3H)

The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when
operating at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows pre-charging of
internal charge pumps so the voltages required for accessing the flash memory array are readily available. The
command sequence: CS# goes lowSending A3H command Sending 3-dummy byteCS# goes high. See
Figure27. After the HPM command is executed, the device will maintain a slightly higher standby current (Icc8) than
standard SPI operation. The Release from Power-Down or HPM command (ABH) can be used to return to standard SPI
standby current (Icc1). In addition, Write Enable command (06H) and Power-Down command (B9H) will also release
the device from HPM mode back to standard SPI standby state.

22
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Figure27. High Performance Mode Sequence Diagram

CS#
0 1 2 3 4 5 6 7 8 9 29 30 31
SCLK
Command 3 Dummy Bytes t HPM
SI A3H 23 22 2 1 0
MSB
SO
High Performance Mode

Continuous Read Mode Reset (CRMR) (FFH)

The Dual/Quad I/O Fast Read operations, “Continuous Read Mode” bits (M7-0) are implemented to further reduce
command overhead. By setting the (M7-0) to AXH, the next Dual/Quad I/O Fast Read operations do not require the
BBH/EBH/E7H command code.
Because the GD25Q16 has no hardware reset pin, so if Continuous Read Mode bits are set to “AXH”, the GD25Q16
will not recognize any standard SPI commands. So Continuous Read Mode Reset command will release the Continuous
Read Mode from the “AXH” state and allow standard SPI command to be recognized. The command sequence is show in
Figure28.

Figure28. Continuous Read Mode Reset Sequence Diagram

Mode Bit Reset for Quad/Dual I/O

CS#
0 1 2 3 4 5 6 7
SCLK

SI(IO0) FFH

SO(IO1) Don`t Care

WP#(IO2) Don`t Care

HOLD#(IO3) Don`t Care

23
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Program/Erase Suspend (PES) (75H)

The Erase/Program Suspend command “75H”, allows the system to interrupt a sector/block erase or page program
operation and then read data from any other sector or block. The Write Status Register command (01H), Page
Program (02H) and Erase commands (20H, 52H, D8H, D2H, C7H, 60H ) are not allowed during suspend.
Erase/Program Suspend is valid only during the sector/block erase or page program operation. A maximum of time of
“tsus” (See AC Characteristics) is required to suspend the program/erase operation.
While the Erase/Program suspend cycle is in progress, the Read Status Register command may still be accessed
for checking the status of the WIP bit. The WIP bit is a 1 during the Erase/Program suspend cycle and becomes a 0
when the cycle is finished and the device is ready to accept read command. A power-off during the suspend period will
reset the device and release the suspend state. The command sequence is show in Figure29.

Figure29. Program/Erase Suspend Sequence Diagram

CS#

0 1 2 3 4 5 6 7 tSUS
SCLK

Command
SI
75H
High-Z
SO
Accept read command

Program/Erase Resume (PER) (7AH)

The Program/Erase Resume command must be written to resume the sector/block erase or program operation after
a Program/Erase Suspend command. After issued the WIP bit in the status register will be set to 1 and the sector/block
erase or program operation will completed. The Program/Erase Resume command will be ignored unless a Program/Erase
Suspend is active. The command sequence is show in Figure30.

Figure30. Program/Erase Resume Sequence Diagram

CS#

0 1 2 3 4 5 6 7
SCLK

Command
SI
7AH

SO Resume Erase/Program

24
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

POWER-ON TIMING

Vcc(max)
Program, Erase and Write command are ignored
Chip Selection is not allowed
Vcc(min)
tVSL Read command Device is fully
Reset is allowed accessible
State
VWI
tPUW

Time

Table3. Power-Up Timing And Write Inhibit Threshold

Symbol Parameter Min Max Unit
tVSL VCC(min) To CS# Low 10 us
tPUW Time Delay From VCC(min) To Write Instruction 1 10 ms
VWI Write Inhibit Voltage VCC(min) 1 2.5 V

INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
contains 00H (all Status Register bits are 0).

DATA RETENTION AND ENDURANCE

Parameter Test Condition Min Units

150℃ 10 Years
Minimum Pattern Data Retention Time
125℃ 20 Years
Erase/Program Endurance -40 to 85℃ 100K Cycles

LATCH UP CHARACTERISTICS
Parameter Min Max

Input Voltage Respect To VSS On I/O Pins -1.0V VCC+1.0V

VCC Current -100mA 100mA

25
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

ABSOLUTE MAXIMUM RATINGS

Parameter Value Unit
Ambient Operating Temperature -40 to 85 ℃
Storage Temperature -55 to 125 ℃
Output Short Circuit Current 200 mA
Applied Input/Output Voltage -0.5 to 4.0 V
VCC -0.5 to 4.0 V

Input timing reference level Output timing reference level

0.8VCC 0.7VCC
AC Measurement Level 0.5VCC
0.2VCC 0.3VCC

Note: Input pulse rise and fall time ara<5ns

CAPACITANCE MEASUREMENT CONDITIONS

Symbol Parameter Min Typ Max Unit Conditions
CIN Input Capacitance 6 pF VIN=0V
COUT Output Capacitance 8 pF VOUT=0V
CL Load Capacitance 30 pF
Input Rise And Fall time 5 ns
Input Pause Voltage 0.2VCC to 0.8VCC V
Input Timing Reference Voltage 0.3VCC to 0.7VCC V
Output Timing Reference Voltage 0.5VCC V

Figure31. Input Test Waveform And Measurement Level

Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform

4.0V
20ns
0V 3.6V
20ns
-0.5V

26
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

DC CHARACTERISTIC
(T= -40℃~85℃, VCC=2.7~3.6V)
Symbol Parameter Test Condition Min. Typ Max. Unit.
ILI Input Leakage Current ±2 μA
ILO Output Leakage Current ±2 μA
ICC1 Standby Current CS#=VCC, 1 5 μA
VIN=VCC or VSS
ICC2 Deep Power-Down Current CS#=VCC, 1 5 μA
VIN=VCC or VSS
CLK=0.1VCC / 0.9VCC
at 90MHz, 15 20 mA
Q=Open(*1,*2,*4 I/O)
ICC3 Operating Current (Read)
CLK=0.1VCC / 0.9VCC
at 80MHz, 13 18 mA
Q=Open(*1,*2,*4 I/O)
ICC4 Operating Current (PP) CS#=VCC 10 mA
ICC5 Operating Current(WRSR) CS#=VCC 10 mA
ICC6 Operating Current (SE) CS#=VCC 10 mA
ICC7 Operating Current (BE) CS#=VCC 10 mA
I CC8 High Performance Current 600 800 uA
VIL Input Low Voltage -0.5 0.2VCC V
VIH Input High Voltage 0.7VCC VCC+0.4 V
VOL Output Low Voltage IOL =1.6mA 0.4 V
VOH Output High Voltage IOH =-100μA VCC-0.2 V

27
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

AC CHARACTERISTICS
(T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)
Symbol Parameter Min. Typ. Max. Unit.
Serial Clock Frequency For: FAST_READ(0BH),
fC DC. 120 MHz
Dual Output(3BH)
Serial Clock Frequency For: Dual I/O(BBH),
fC1 Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O DC. 90 MHz
With High Performance Mode)
Serial Clock Frequency For: Dual I/O(BBH),
fC2 Quad I/O(EBH) (Dual I/O & Quad I/O Without High DC. 50 MHz
Performance Mode)
fR Serial Clock Frequency For: Read(03H) DC. 90 MHz
tCLH Serial Clock High Time 3.5 ns
tCLL Serial Clock Low Time 3.5 ns
tCLCH Serial Clock Rise Time (Slew Rate) 0.2 V/ns
tCHCL Serial Clock Fall Time (Slew Rate) 0.2 V/ns
tSLCH CS# Active Setup Time 5 ns
tCHSH CS# Active Hold Time 5 ns
tSHCH CS# Not Active Setup Time 5 ns
tCHSL CS# Not Active Hold Time 5 ns
tSHSL CS# High Time（read/write） 20 ns
tSHQZ Output Disable Time 16 ns
tCLQX Output Hold Time 0 ns
tDVCH Data In Setup Time 2 ns
tCHDX Data In Hold Time 2 ns
tHLCH Hold# Low Setup Time (relative to Clock) 5 ns
tHHCH Hold# High Setup Time (relative to Clock) 5 ns
tCHHL Hold# High Hold Time (relative to Clock) 5 ns
tCHHH Hold# Low Hold Time (relative to Clock) 5 ns
tHLQZ Hold# Low To High-Z Output 6 ns
tHHQX Hold# Low To Low-Z Output 6 ns
tCLQV Clock Low To Output Valid 6 ns
tWHSL Write Protect Setup Time Before CS# Low 20 ns
tSHWL Write Protect Hold Time After CS# High 100 ns
tDP CS# High To Deep Power-Down Mode 0.1 μs
CS# High To Standby Mode Without Electronic Signature
tRES1 0.1 μs
Read
CS# High To Standby Mode With Electronic Signature
tRES2 0.1 μs
Read
tHPM CS# High To High Performance mode 0.2 us

28
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

tSUS CS# High To Next Command After Suspend 2 us

tW Write Status Register Cycle Time 2 15 ms
tPP Page Programming Time 0.7 2.4 ms
tSE Sector Erase Time 100 300 ms
tBE Block Erase Time(32K Bytes/64K Bytes/128K Bytes) 0.3/0.4/0.8 1/1.2/2.4 s
tCE Chip Erase Time(GD25Q16) 16 32 s

Figure32. Serial Input Timing

tSHSL
CS#

tCHSL tSLCH tCHSH tSHCH

SCLK
tDVCH tCHCL
tCHDX tCLCH

SI MSB LSB

SO High-Z

Figure33. Output Timing

CS#
tCH tSHQZ
SCLK
tCLQV tCLQV tCL
tCLQX tCLQX tQLQH
SO LSB
tQHQL
SI
Least significant address bit (LIB) in

Figure34. Hold Timing

CS#

tCHHL tHLCH tHHCH

SCLK

tCHHH
tHLQZ tHHQX
SO

HOLD#

SI do not care during HOLD operation.

29
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

ORDERING INFORMATION

GD XX X XX X X X X
Packing Type
T:Tube
Y:Tray
R:Tape & Reel
Green Code
P:Pb Free Only Green Package
G:Pb Free & Halogen Free Green Package

Temperature Range
C:Commercial(0℃ to +70℃)
I:Industrial(-40℃ to +85℃)

Package Type
T:SOP8 150mil
S:SOP8 208mil
P:DIP8
W: WSON (6*5mm)

Density
80:8Mb
16:16Mb
32:32Mb
64:64Mb

Series
Q:3V, 4KB Uniform Sector, Quad I/O
LQ:1.8V,4KB Uniform Sector

Product Family
25:Serial Flash

NOTE:
1. Standard bulk shipment is in Tube. Any alternation of packing method (for Tape, Reel and Tray etc.), please
advise in advance.

30
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

PACKAGE INFORMATION
Package SOP8L 208MIL

8 5 θ

E1 E

L1
L
1 4
C
D

A2 A

b A1
S e

Dimensions
Symbol
A A1 A2 b C D E E1 e L L1 S θ
Unit
Min 0.05 1.70 0.36 0.19 5.13 7.70 5.18 0.50 1.21 0.62 0
mm Nom 0.15 1.80 0.41 0.20 5.23 7.90 5.28 1.27 0.65 1.31 0.74 5
Max 2.16 0.25 1.91 0.51 0.25 5.33 8.10 5.38 0.80 1.41 0.88 8
Min 0.002 0.067 0.014 0.007 0.202 0.303 0.204 0.020 0.048 0.024 0
Inch Nom 0.006 0.071 0.016 0.008 0.206 0.311 0.208 0.050 0.026 0.052 0.029 5
Max 0.085 0.010 0.075 0.020 0.010 0.210 0.319 0.212 0.031 0.056 0.035 8

31
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Package SOP8L 150MIL

8 5 θ

E1 E

L1
L
1 4
C
D

A2 A

b A1
S e

Dimensions
Symbol
A A1 A2 b C D E E1 e L L1 S θ
Unit
Min 0.10 1.35 0.36 0.15 4.77 5.80 3.80 0.46 0.85 0.41 0
mm Nom 0.15 1.45 0.41 0.20 4.90 5.99 3.90 1.27 0.66 1.05 0.54 5
Max 1.75 0.20 1.55 0.51 0.25 5.03 6.20 4.00 0.86 1.25 0.67 8
Min 0.004 0.053 0.014 0.006 0.188 0.228 0.150 0.018 0.033 0.016 0
Inch Nom 0.006 0.057 0.016 0.008 0.193 0.236 0.154 0.050 0.026 0.041 0.021 5
Max 0.069 0.008 0.061 0.020 0.010 0.198 0.244 0.158 0.034 0.049 0.026 8

32
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

Package DIP8L

8 5

E1

1 4

D
E

A2 A
C

L A1
b eB
S e
b1

Dimensions
Symbol
A A1 A2 b b1 C D E E1 e eB SL S
Unit
Min 0.38 3.18 1.14 0.36 0.20 9.02 7.62 6.22 7.87 2.92 0.76
mm Nom 3.30 1.52 0.46 0.25 9.27 7.87 6.35 2.54 8.89 3.30 1.14
Max 5.33 3.43 1.78 0.56 0.36 10.16 8.13 6.48 9.53 3.81 1.52
Min 0.015 0.125 0.045 0.014 0.008 0.355 0.300 0.245 0.310 0.115 0.030
Inch Nom 0.130 0.060 0.018 0.010 0.365 0.310 0.250 0.10 0.350 0.130 0.045
Max 0.21 0.135 0.070 0.022 0.014 0.400 0.320 0.255 0.375 0.150 0.060

33
 Uniform Sector
Dual and Quad Serial Flash GD25Q16

REVISION HISTORY
Version No Description Date
1.0 Initial Release Sep.10,2009
1.1 Add Packing Type(Tray, Reel & Tape), Add 150Mil Package Feb.04,2010
1.2 Add tHPM Parameter May.14,2010
1.3 Update Datasheet Aug.04,2010

34