AP85T03GH/J

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low Gate Charge D BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 6mΩ
▼ Fast Switching ID 75A
G
S

Description G D
S
The TO-252 package is widely preferred for all commercial-industrial TO-252(H)
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GJ) is
available for low-profile applications.
G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 75 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 55 A
1
IDM Pulsed Drain Current 350 A
PD@TC=25℃ Total Power Dissipation 107 W
Linear Derating Factor 0.7 W/℃
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data & specifications subject to change without notice 1

200810235
AP85T03GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=45A - - 6 mΩ
VGS=4.5V, ID=30A - - 10 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 55 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=175 C) VDS=24V, VGS=0V - - 500 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=30A - 33 52 nC
Qgs Gate-Source Charge VDS=24V - 8 nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 24 nC
Qoss Output Charge VDD=15V,VGS=0V - 24.5 39 nC
2
td(on) Turn-on Delay Time VDS=15V - 11 - ns
tr Rise Time ID=30A - 77 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 35 - ns
tf Fall Time RD=0.5Ω - 67 - ns
Ciss Input Capacitance VGS=0V - 2700 4200 pF
Coss Output Capacitance VDS=25V - 550 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=30A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP85T03GH/J

300 150

o o
T C =25 C T C = 175 C 10V
250
10V
7.0V
7.0V
6.0V

ID , Drain Current (A)

ID , Drain Current (A)

6.0V
200 100

150
4.5V

100 4.5V 50 V G =4.0V

50 V G =4.0V

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

13 2.0

I D =30A
T c =25 ℃ I D =45A
11
V G =10V
Normalized RDS(ON)

1.5
RDS(ON) (mΩ)

1.0

3 0.5
2 4 6 8 10 -50 0 50 100 150 200

o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
30 2.4

20
T j =175 o C T j =25 o C 1.6
VGS(th) (V)
IS (A)

1.2

10 0.8

0.4

0 0
0 0.2 0.4 0.6 0.8 1 1.2 -50 25 100 175

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C)o

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP85T03GH/J

14 10000
f=1.0MHz

I D =30A
12
VGS , Gate to Source Voltage (V)

10
V DS =15V
V DS =20V C iss
V DS =24V
8

C (pF)
1000

C oss
4 C rss

0 100
0 10 20 30 40 50 60 70 1 6 11 16 21 26 31

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1
Normalized Thermal Response (Rthjc)

DUTY=0.5

100 0.2

100us
ID (A)

0.1
0.1

0.05
PDM
10
1ms t
0.02
T
10ms 0.01

Duty factor = t/T

T c =25 o C 100ms
Single Pulse
Peak Tj = PDM x Rthjc + T C

Single Pulse DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1 A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2 D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
E1 F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Part Marking Information & Packing : TO-252

Laser Marking
Part Number

Meet Rohs requirement

for low voltage MOSFET only
85T03GH Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence

5
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-251

D Millimeters
A SYMBOLS
c1 MIN NOM MAX
D1 A 2.20 2.30 2.40
E2 A1 0.90 1.20 1.50
B1 0.40 0.60 0.80
B2 0.60 0.85 1.05
E1 E
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 4.80 5.20 5.50
A1
E 6.70 7.00 7.30
B2
E1 5.40 5.60 5.80
F E2 1.30 1.50 1.70
B1
e ---- 2.30 ----
F 7.00 8.30 9.60

c 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.
e e

Part Marking Information & Packing : TO-251

Part Number meet Rohs requirement

for low voltage MOSFET only
85T03GJ Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product