2SD667, 2SD667A

Silicon NPN Epitaxial

REJ03G0769-0200
(Previous ADE-208-1137)
Rev.2.00
Aug.10.2005

Application
• Low frequency power amplifier
• Complementary pair with 2SB647/A

Outline

RENESAS Package code: PRSS0003DC-A

(Package name: TO-92 Mod)

1. Emitter
2. Collector
3. Base

3
2
1

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol 2SD667 2SD667A Unit
Collector to base voltage VCBO 120 120 V
Collector to emitter voltage VCEO 80 100 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 1 1 A
Collector peak current iC(peak) 2 2 A
Collector power dissipation PC 0.9 0.9 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C

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2SD667, 2SD667A

Electrical Characteristics
(Ta = 25°C)
2SD667 2SD667A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 120 — — 120 — — V IC = 10 µA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 80 — — 100 — — V IC = 1 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO 5 — — 5 — — V IE = 10 µA, IC = 0
breakdown voltage
Collector cutoff current ICBO — — 10 — — 10 µA VCB = 100 V, IE = 0
DC current transfer ratio hFE1*1 60 — 320 60 — 200 VCE = 5 V,
2
IC = 150 mA*
hFE2 30 — — 30 — — VCE = 5 V,
2
IC = 500 mA*
Collector to emitter VCE(sat) — — 1 — — 1 V IC = 500 mA,
2
saturation voltage IB = 50 mA*
Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V,
2
IC = 150 mA*
Gain bandwidth product fT — 140 — — 140 — MHz VCE = 5 V,
2
IC = 150 mA*
Collector output Cob — 12 — — 12 — pF VCB = 10 V, IE = 0,
capacitance f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.
2. Pulse test
B C D
2SD667 60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200

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2SD667, 2SD667A

Main Characteristics

Maximum Collector Dissipation Curve Typical Output Characteristics

1.0
Collector Power Dissipation PC (W)
1.2 35
30
25

Collector Current IC (A)

0.8 20
15
0.8 10
0.6
5

0.4 2
0.4 P
C =0
.9
W 1
0.2
0.5mA
IB = 0

0 50 100 150 0 2 4 6 8 10

Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio

Typical Transfer Characteristics vs. Collector Current
500 300
VCE = 5 V
DC Current Transfer Ratio hFE VCE = 5 V
Collector Current IC (mA)

200 °C
250 Ta = 75
100
5°C

200 25
50
Ta = 7
25
–25

–25
20 150

10
100
5
50
2
1 0
0 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 300 1,000

Base to Emitter Voltage VBE (V) Collector Current IC (mA)

Saturation Voltage Gain Bandwidth Product

vs. Collector Current vs. Collector Current
Collector to Emitter Saturation Voltage VCE(sat) (V)

Base to Emitter Saturation Voltage VBE(sat) (V)

0.6 1.2 240

Gain Bandwidth Product fT (MHz)

VCE = 5 V
IC = 10 IB
0.5 1.0 Pulse 200
°C
0.4 0.8 VBE(sat) Ta = –25
160
25
75
0.3 0.6 120

0.2 0.4 80
75 5
2
0.1 0.2 VCE(sat) °C 40
= –25
Ta
0 0 0
1 3 10 30 100 300 1,000 10 30 100 300 1,000

Collector Current IC (mA) Collector Current IC (mA)

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2SD667, 2SD667A

Collector Output Capacitance vs.

Collector to Base Voltage

Collector Output Capacitance Cob (pF)

200
f = 1 MHz
100 IE = 0

50

20

10

2
1 2 5 10 20 50 100

Collector to Base Voltage VCB (V)

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2SD667, 2SD667A

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g
Unit: mm

4.8 ± 0.4 3.8 ± 0.4

8.0 ± 0.5
2.3 Max
0.65 ± 0.1
0.75 Max

10.1 Min
0.60 Max
0.7
0.55 Max 0.5 Max

1.27
2.54

Ordering Information
Part Name Quantity Shipping Container
2SD667BTZ-E 2500 Hold Box, Radial Taping
2SD667CTZ-E
2SD667DTZ-E
2SD667ABTZ-E
2SD667ACTZ-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.2.00 Aug 10, 2005 page 5 of 5