CMOS
CMOS
simulator
timescale <reference_time>/ <precision>
MOSFET Amplifier
MOSFET has extremely high input impedance which makes them
easy to bias.
A small change in gate voltage produces a large change in drain
current as in JFET. This fact makes MOSFET capable of raising
the strength of a weak signal; thus acting as an amplifier.
During the positive half-cycle of the signal, the positive voltage on
the gate increases and produces the enhancement-mode .This
increases the channel conductivity and hence the drain current.
During the negative half-cycle of the signal, the positive voltage
decreases and produces depletion-mode. This decreases the
conductivity and hence the drain current.
Mealy and Moore State Machines
A moore machine is defined as a machine in theory of
computation whose output values are determined only by its
current state.
A mealy machine is defined as a machine in theory of computation
whose output values are determined by both its current state and
current inputs.
1. Body Effect
Body effect refers to the change in the transistor
threshold voltage (VT) resulting from a voltage difference
between the transistor source and body.
Body effect occurs when body or substrate of transistor is not
biased at same level as that of source. The bulk voltage of
NMOS is drops below the source voltage
As VB becomes more negative (i.e. VB < VS where VS = 0)
more holes are attracted to the substrate connection leaving a
larger negatively charged ions behind i.e. the depletion region
becomes, hence Vt increases.
Because the voltage difference between the source and body
affects the VT, the body can be thought of as a second gate
2. Channel Length Modulation
As the drain-to-source voltage increases, the
triode region transitions to the saturation region,
in which drain current is (ideally) independent of
drain-to-source voltage and thus influenced only
by the physical characteristics of the FET and
the gate-to-source voltage.
The transition to saturation mode occurs because the
channel gets “pinched off” at the drain end.
There are some subtleties to the operation of the transistor in
the saturation region.
The length of the channel changes with changing values of
VDS.
*As the value of VDS is increased, it causes the depletion
region of the Drain junction to grow. This reduces the
channel length which impacts current.* The model current
equation must be modified to
4. Velocity Saturation.
The electric field at which the velocity of carrier saturates is called as the
critical electric field. The loss of energy is because of the collisions of
carriers called as scattering effect.
5. Mobility Variation
In the derivation of ideal I-V relationship we assumed that the mobility
was constant. This assumption must be modified for two reasons. The
first reason is the variation of mobility with gate voltage and the second
reason is that the effective carrier mobility decreases as the carrier
approaches the velocity saturation limit as discussed previously. The
inversion layer is created by a vertical electric field because of gate
voltage. A positive gate voltage produces a force on the electrons in the
inversion layer towards the surface. As the electrons travel through the
channel towards the drain they are attracted to the surface but then are
repelled by localized coulombic forces. This effect is shown in
Figure and called as surface scattering.
6. Subthreshold Conduction :
In order to address the subthreshold conduction phenomenon let us plot
the
IDS-VGS characteristics shown in Figure below.
A closer inspection of the IDS-VGS curve shows that the current does
not drop abruptly to '0' at VGS = VTH. It indicates that the MOS
transistor is partially conducting for voltages below the threshold voltage.
This effect is called as subthreshold or weak inversion conduction. To
study subthreshold conduction effect in more detail let us redraw the
curve of on logarithmic scale as shown in Figure below.
From the IDS-VGS curve in log scale it is clear that current does
not drop to zero immediately for VGS < VTH but actually decays in
an exponential fashion.
Thus even VGS < VTH IDS is finite but it exhibits exponential
dependence on VGS for smaller values of VDS roughly in the
range of 200 mV.
In digital circuit designs the presence of subthreshold current is not
desirable because it deviates the transistor from its ideal switch
like behaviour which require that current should drop as fast as
possible once the gate to source voltage falls below VTH.
The subthreshold conduction effect can be formulated as :
IDS = I0 exp VGSn KTq
For CMOS logic, give the various techniques you know to minimize
power consumption?
2. Trivalent (valency 3); like Indium (In), Boron (B), Aluminium (Al),
etc.
Dynamic power is the sum of two factors: switching power plus short-
circuit power.
Pswitching = a.f.Ceff.Vdd2
Pshort-circuit = Isc.Vdd.f
Where Isc = the short-circuit current during switching, Vdd = the supply
voltage and f = switching frequency.
• Short circuit current occurs during signal transitions when
both the NMOS and PMOS are ON and there is a direct
path between Vdd and GND
• Can be reduced :
Where Vdd = the supply voltage, Vth = the threshold voltage, W = the
transistor width and L = the transistor length.
BINARY TO DECIMAL
static void decToBinary(int n)
{
// array to store binary number
int[] binaryNum = new int[1000];
NOISE/NOISE MARGIN:
NOISE SOURCES:
Thermal noise is generated by thermally induced motion of electrons in
conductive regions, e.g., carbon resistors, polysilicon resistors, MOS
transistor channel in strong inversion
Shot noise - Generated by fluctuations in static (dc) current flow through
depleted (junction) regions, e.g., in a pn junction diode, a bipolar
transistor, or MOS transistor in subthreshold regime
Flicker noise (1/f noise) is associated with static (dc) current flow in both
conductive and depletion regions. (Shot noise is caused by the fact that
current flowing across a junction isn’t smooth). Flicker noise is also
commonly called 1/f noise, because the noise spectrum varies as 1/f^α,
where the exponent α is very close to unity (α = 1 ± 0.2). It is caused by
surface and bulk traps due to defects and contaminants that randomly
capture and release carriers
In addition to the flicker noise caused by traps in the oxide, trapping
centers in the bulk of the device can cause generation/recombination
(G/R) noise. The trapping of carriers by these traps causes fluctuations in
the number of carriers, and thus fluctuation in the resistance.