TPCA8030-H: High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
TPCA8030-H: High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
TPCA8030-H: High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8030-H
High-Efficiency DC-DC Converter Applications
Unit: mm
Notebook PC Applications
1.27 0.4 ± 0.1
Portable Equipment Applications 8
5
0.05 M A
5.0 ± 0.2
6.0 ± 0.3
0.15 ± 0.05
• Small footprint due to a small and thin package
• High-speed switching
4 0.595
• Small gate charge: QSW = 5.0 nC (typ.) 1
0.95 ± 0.05
0.166 ± 0.05
• High forward transfer admittance: |Yfs| = 60 S (typ.)
5.0 ± 0.2
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.05 S
1.1 ± 0.2
S
4
Absolute Maximum Ratings (Ta = 25°C)
1
0.6 ± 0.1
3.5 ± 0.2
Characteristic Symbol Rating Unit
4.25 ± 0.2
0.8 ± 0.1
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 24 1,2,3:SOURCE 4:GATE
Drain current A 5,6,7,8:DRAIN
Pulsed (Note 1) IDP 72
Drain power dissipation (Tc=25℃) PD 30 W JEDEC ⎯
Drain power dissipation (t = 10 s) JEITA ⎯
PD 2.8 W
(Note 2a)
TOSHIBA 2-5Q1A
Drain power dissipation (t = 10 s)
PD 1.6 W Weight: 0.069 g (typ.)
(Note 2b)
Single-pulse avalanche energy
EAS 75 mJ
(Note 3)
Circuit Configuration
Avalanche current IAR 24 A
Repetitive avalanche energy 8 7 6 5
EAR 3.0 mJ
(Tc = 25℃) (Note 4)
Channel temperature Tch 150 °C
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TPCA8030-H
Thermal Characteristics
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)
(a) (b)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
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TPCA8030-H
Electrical Characteristics (Ta = 25°C)
RL = 1.25Ω
Switching time ns
4.7 Ω
VDD ≈ 15 V
Turn-off time toff ⎯ 21 ⎯
Duty ≤ 1%, tw = 10 μs
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8 6 5 ID – VDS ID – VDS
20 50
10 3.6 3.4 4.5 4 3.8
10
3.8 5
Common source Common source
16 4 40
Ta = 25°C 6 Ta = 25°C
(A)
(A)
4.5 Pulse test 8 Pulse test
3.3
ID
ID
12 30 3.6
Drain current
Drain current
3.2
3.4
8 20
3.1 3.3
3.2
3.0
4 10
3.1
VGS = 2.9 V
VGS = 3 V
0 0
0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2
VDS
ID
24 0.3
Drain-source voltage
Drain current
16 0.2 ID = 24 A
Ta = −55°C
100
8 0.1 12
25
6
0 0
0 1 2 3 4 5 0 2 4 6 8 10
Drain-source ON-resistance
Ta = −55°C
VGS = 4.5 V
RDS (ON) (mΩ)
Forward transfer admittance
10 25 10
100
10
1 1
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Common source 10
(A)
Pulse test
Drain-source ON-resistance
4.5
3
IDR
15
ID = 6,12,24 A
RDS (ON) (mΩ)
10
5 VGS = 10 V
Common source
Ta = 25°C
Pulse test
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1
−
−1.2
2.5
(pF)
Ciss
1000 2
Gate threshold voltage
C
Capacitance
Coss 1.5
Crss
100 1
Dynamic input/output
characteristics
50 20
Common source
ID = 24 A
(V)
(V)
40 Ta = 25°C 16
Pulse test
VDS
VGS
VGS
30 12
Drain-source voltage
Gate-source voltage
VDS = 24 V
6
12
20 8
VDD = 24 V
12
10 4
6
0 0
0 5 10 15 20 25 30
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TPCA8030-H
rth – tw
1000
rth (1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b) (2)
(3) Tc = 25℃
100
Transient thermal impedance
(1)
10
(°C/W)
(3)
1
0.1
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
PD – Ta PD – Tc
3 40
(1)Device mounted on a glass-epoxy
(W)
(W)
PD
t=10s 30
2
Drain power dissipation
(2)
1.5 20
10
0.5
0 0
0 40 80 120 160 0 40 80 120 160
10ms *
10
1
* Single−pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature. VDSS max
0.1
0.1 1 10 100
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TPCA8030-H
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