MMBT3904LT1

Preferred Device

General Purpose Transistor

NPN Silicon

Features
• Pb−Free Packages are Available http://onsemi.com

MAXIMUM RATINGS COLLECTOR

3
Rating Symbol Value Unit
Collector −Emitter Voltage VCEO 40 Vdc
1
Collector −Base Voltage VCBO 60 Vdc BASE

Emitter −Base Voltage VEBO 6.0 Vdc

2
Collector Current − Continuous IC 200 mAdc EMITTER
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit MARKING
Total Device Dissipation FR− 5 Board PD 225 mW
DIAGRAM
3
(Note 1) TA = 25°C
Derate above 25°C 1.8 mW/°C
1 1AM
Thermal Resistance Junction to Ambient RJA 556 °C/W
2
Total Device Dissipation PD 300 mW SOT−23 (TO−236)
Alumina Substrate, (Note 2) TA = 25°C CASE 318
Derate above 25°C 2.4 mW/°C
Style 6
Thermal Resistance Junction−to−Ambient RJA 417 °C/W
1AM = Specific Device Code
Junction and Storage Temperature TJ, Tstg −55 to °C
+150
1. FR−5 = 1.0
0.75
0.062 in. ORDERING INFORMATION
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Device Package Shipping†
MMBT3904LT1 SOT−23 3000 / Tape & Reel
MMBT3904LT1G SOT−23 3000 / Tape & Reel
MMBT3904LT3 SOT−23 10000 / Tape & Reel
MMBT3904LT3G SOT−23 10000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

February, 2004 − Rev. 5 MMBT3904LT1/D
 MMBT3904LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc
Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain HFE −
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 −

Collector −Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 mAdc, IB = 1.0 mAdc) − 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.3
Base −Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k ohms
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10− 4
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 −
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, td − 35
ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35
Storage Time (VCC = 3.0 Vdc, ts − 200
ns
Fall Time IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 50
3. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.

+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 s t1
300 ns +10.9 V
+10.9 V DUTY CYCLE = 2%
275 275

10 k 10 k
0
−
0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*

−
9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

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 MMBT3904LT1

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200

100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)

50 50

30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time

500 500
t′s = ts − 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s′ , STORAGE TIME (ns)

t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20

10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

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 MMBT3904LT1

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

12 14
SOURCE RESISTANCE = 200
f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200

IC = 0.5 mA IC = 50 A
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 A
IC = 50 A 6
4
4

2 SOURCE RESISTANCE = 500
2

IC = 100 A
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Figure 10.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE ( mhos)

50

200
h fe , CURRENT GAIN

20

10
100

70 5

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 −4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

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 MMBT3904LT1

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
0.5 −
55 °C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
VC FOR VCE(sat)
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)

0.8 0 −
55 °C TO +25°C

VBE @ VCE =1.0 V
0.6 −
0.5
−
55 °C TO +25°C
0.4 −
1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 −
1.5 VB FOR VBE(sat)

0 −
2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

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 MMBT3904LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AH NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
A IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L 4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
3 INCHES MILLIMETERS
B S DIM MIN MAX MIN MAX
1 2 A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
V G D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
H S 0.0830 0.1039 2.10 2.64
D J V
K 0.0177 0.0236 0.45 0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035

0.8
0.031
SCALE 10:1 inches
mm 

Figure 19. SOT−23

*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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