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IGBT

The document discusses IGBT (Insulated Gate Bipolar Transistor), which combines advantages of MOSFET and BJT. It has high input impedance like MOSFET and low on-state loss like BJT. The IGBT structure consists of a MOSFET with a PNP bipolar transistor, allowing it to operate like a voltage-controlled BJT. It is used in medium power applications like motor drives and UPS systems due to its low switching losses and gate drive requirements.

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358 views12 pages

IGBT

The document discusses IGBT (Insulated Gate Bipolar Transistor), which combines advantages of MOSFET and BJT. It has high input impedance like MOSFET and low on-state loss like BJT. The IGBT structure consists of a MOSFET with a PNP bipolar transistor, allowing it to operate like a voltage-controlled BJT. It is used in medium power applications like motor drives and UPS systems due to its low switching losses and gate drive requirements.

Uploaded by

304920 ktr.eee.17
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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IGBT

A new development in the area of power


MOSFET technology.
 It combines the advantages of both MOSFET and
BJT
 It has high input impedance like MOSFET and
low on state loss as in BJT
It is free from secondary breakdown
 Meta oxide insulated gate transistor-Conductively
modulated field effect transistor-Gain modulated
FET-Insulated gate transistor

1
IGBT(Insulated Gate Bipolar Transistor)
Constructed in the same way
as that of MOSFET with a
major difference in the
substrate
n+ layer substrate at the drain
in power MOSFET is
substituted in the IGBT by a
p+ structure called collector

IGBT has thousands of basic


structure cells connected on a
single chip of silicon

When gate is positive w.r.t


emitter and with gate –emitter
voltage more than the
threshold voltage of IGBT, an
2
n channel is formed
IGBT(Insulated Gate Bipolar Transistor)
 This n channel short circuits the n-region with n+
emitter regions
 An electron movement in the n-channel causes
substantial hole injection from p+ substrate layer in
to the epitaxial n-layer
A forward current is established
 The three layer p+, n- and p – PNP transistor with
p+ as emitter, n- base and p as collector. Also n-,p
and n+ layers constitute NPN transistor
 Here n- serves as base for PNP transistor and also
as collector for NPN transistor
3
IGBT(Insulated Gate Bipolar Transistor)
P serves as collector for PNP device and as base
for NPN transistor.
Two and n+ layers constitute NPN transistor
n- serves as base for PNP transistor and also as
collector for NPN transistor
p serves as collector for PNP transistor and as
base for NPN transistor
Two npn and pnp transistors can be connected
together to give the equivalent circuit of an
IGBT
Circuit Elements: Gate, Emitter and Collector 4
Basic Structure, Equivalent structure
and Symbol of IGBT

5
IGBT Characteristics

6
Transfer Characteristics
Plot of collector current
and gate-emitter voltage
Identical to that of power
MOSFET
When VGE is less than
Vget , IGBT is in the off
state
When the device is off ,
junction J2 blocks forward
voltage and in case reverse
voltage appears across
collector and emitter ,
Junction J1 blocks 7
Static V-I (output)Characteristics

Plot of Ic and Vce


In the forward
direction it is
similar to BJT
characteristics
Here controlling
parameter is Vce
Since IGBT is a
voltage controlled
device
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Switching Characteristics of IGBT

9
Switching Characteristics of IGBT
 The turn on time – Time between the instants of
forward blocking to forward on state
Ton = tdn + tr
 Delay time = time for the collector emitter
voltage to fall from Vce to 0.9 Vce (Vce = initial
collector emitter voltage) = time for the collector
current to rise from its initial leakage current Ice
to 0.1 Ic (Ic is the final value)
 Rise time = time during which collector emitter
voltage falls from 0.9 Vce to 0.1 Vce=Time for
the collector to rise from 0.1 Ic to its final value
Ic
10
Switching Characteristics of IGBT
 After Ton, the collector is Ic and the collector emitter
voltage falls in to small value called conduction drop
(Vces)
Turn off time = tdf + tf1+tf2
 Tdf = time during which gate voltage falls from Vce to
threshold voltageVget
 As Vce falls to Vget during tdf, the collector Ic falls to
0.9Ic.
At the end of tdf, the collector emitter voltage begins to
rise
 Tf1 = time during which collector current falls from
90% to 20% of its initial value= time during which
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collector emitter voltage rises from Vces to 0.1 Vce
Switching Characteristics of IGBT
 Tf2 =time during which collector current falls from 20
to 10% of Ic=time during which collector emitter
voltage rises from 0.1 Vce to final value Vce
Applications of IGBT:
 Used in medium power applications----ac, dc motor
drives, UPS systems, power supplies and drives for
solenoids , relays and contactors
 IGBT –expensive than BJT-but popular due to low
gate drive requirements, lower switching losses and
smaller snubber circuit requirements
IGBT converters -more efficient –less size , cost
IGBT inverter fed IM are widely used-less audio-noise
IGBT are available up to 1200 V ,500 A
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