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Process-Induced Variability I: Random

This document discusses within-die variations in 45nm bulk CMOS technology. It notes that random variability sources and their characterization are important factors to consider. MOSFET structures with smaller channel or active region areas are more susceptible to device performance variability that can be layout dependent and difficult to predict, whereas larger structures experience variability that is less layout dependent but can only have the standard deviation predicted as the dominant factor.

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47 views2 pages

Process-Induced Variability I: Random

This document discusses within-die variations in 45nm bulk CMOS technology. It notes that random variability sources and their characterization are important factors to consider. MOSFET structures with smaller channel or active region areas are more susceptible to device performance variability that can be layout dependent and difficult to predict, whereas larger structures experience variability that is less layout dependent but can only have the standard deviation predicted as the dominant factor.

Uploaded by

eleenaamohapatra
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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45nm Bulk CMOS Within-Die Variations. Courtesy of C.

Spanos (UC Berkeley)

Lecture 11
• Process-induced Variability I: Random
– Random Variability Sources and Characterization
– Comparisons of Different MOSFET Structures

Reading: multiple research articles (reference list at


the end of this lecture)
Device Performance Variability
- An issue for small channel or active region area MOSFETs

• Layout dependent • Less layout dependent


• Performance can be predicted • Only standard deviation
can be predicted
• Dominant factor
T. Hiramoto, FD-SOI Workshop (2011)

11/5/2013 Nuo Xu EE 290D, Fall 2013 2

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