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Electronic Devices and Circuits (Formula Notes)

Thermal Voltage: (Voltage Equivalent of Temperature)
VT
VT = T
volt
11600

Leakage Current (I o)
Also called minority carrier current or thermally generated current.
In silicon it is in nano ampere range and in germanium it is in micro ampere
e > 10 µ
range.
Io doubles for every 10ºC. For 1ºC, Io increases by 7%.
Io is proportional to the area of the device.
Advantages of smaller Io:
(i) Suitable for high temperature applications
(ii) Good Thermal stability
(iii) No false triggering

Energy Gap: Difference between the lower energy level of conduction band (CB)
EC and upper energy level of valance band (VB) E v is called as energy gap.
Metals: VB and CB are overlap to each other.
This overlapping increases with temperature.
e is both in CB and VB.
-

Insulators: Conduction band is always empty. Hence no current passes.

Band gap: 5 eV – 15 eV.
Semiconductor: Energy gap is small and it is in range of 1 eV.
At room temperature current can pass through a semi conductor.
Energy Gap Ge Si Ga As
Eg T = 0 7.85 eV 1.21 eV XX
Eg T = 300 K 0.72 eV 1.1 eV 1.47 eV
Energy gap at temperature T
For Ge
= - ´
Eg(T) 0.785 7.2 10- T
For Si Eg(T) = - ´ 4
1.21 3.6 10- T
4

Energy gap decreases with temperature.

- dv volt
Electric Field Intensity = ____
dx meter
drift velocity m= = v m2
Mobility of charge carriers electric field intensity
e sec

Mobility V s curve
e < 103

m= constant
103 < e <104 µ - 1/ 2

e > 104 µ 1

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So drift velocity: V d µ

Mobility indicates how quick is the

another.
eV µ 1/2 Vd
e-or
hole moving from one place to
= constant

Electron mobility > hole mobility

Mobility of charge carriers decreases with the temperature.
µ Tm -

Mass Action Law: In a semi conductor under thermal equilibrium (at constant
temperature) the product of electrons and holes in a semiconductor is always
constant and equal to the square of intrinsic concentration.

®
®®
no
[ no po= ni2]
Concentration of e-in conduction bandPo
Concentration of holes in valance band ni
Intrinsic concentration at given temperature
ni2
Majority carrier concentration =
Minority carrier concentration
- Eg
Intrinsic concentration n2 i= A o T3e2 KT

ni is a function of temperature and energy gap.

Einstein’s Equation: Relation between diffusion constant, mobility and thermal
voltage.
Dn D P
= _____ = V
T
= KT
n P Dn ® e- diffusion constant
The unit of D is volts. Where,
D ®Hole diffusion constant
m p

Diffusion and Drift Current:

Diffusion Current: It is defined as migration of charge carriers from higher
concentration to lower concentration due to concentration gradient.
Drift Current: It is flow of current through the material or device under the
influence of voltage or electric field intensity.

= +
Total current density in a semi conductor

¯ =¯ + ¯¢¢
J Jn Jp

¯ ¯¢
n

¯
(Total current)
J

current due to e -
(Current carried by e-)
J
n
(Current carried by holes)
J

e drift current density e- diffusion current density

-
n

dn
For e - J = nq + qD _____ A/cm 2
n n ndx

dp
For holes J = pq c - q D A/ c m 2
p p pdx

e– diffusion length
L n= D n cm
Hole diffusion length L = D cm
P P

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Conductivity
In Metals: Metals are uni-polar, so current is carried only by e -

= nq n
In metal, conductivity decreases with temperature.
In Semi Conductors = nq n + pq P
Concentration of in CB
e -

n ® Concentration of holes in VB
e®
m n , m p ® Mobility of holes and electrons

· Conductivity of pure semi-conductor increases with temperature

In Extrinsic Semi-conductor
For n type =NDqn ND = donor concentration

For p type = NA qp NA = acceptor concentration

In extrinsic semiconductor (SC) below the room temperature, conductivity
increases. But above the room temperature their conductivity decreases.

Periodic Table:
III IV V
B C N
Al Si P
Ga Ge As
In Sn Sb

~ e   1.602 1019 m
C,
   9 .1 1 0 3 1 k g , ‘F’ force o n electron in uniform electric field ‘E’
 

eE
~ F=eE; acceleration a
m
~ If electron with velocity ' v ' moves in field ' E ' making an angle ' ' can be 

resolved to v sin ,vcos .  

~ Effect of Magnetic Field ‘B’ on Electron.

mv t m
; Period ' ' 2
 

~ When B & Q are perpendicular path is circular r 

Be Be
~ When slant with ' ' path is # Helical.


~ EQUATIONS OF CRT
~ ELECTROSTATIC DEFLECTION SENSITIVITY S
lL
e
2 dVa
e
~ MAGNETIC DEFLECTION SENSITIVITY SmlL
2mVa

~ Velocity due to voltage V, v 2eV

m

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~ When E and B are perpendicular and initial velocity of electron is zero, the path is
u
Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where Q ,


Be
E ,  .
u B m 

~ S i , G e have 4 electrons in covalent bands. Valency of 4. Doping with trivalent

elements makes ' p ', Pentavalent elements makes ' n ' semiconductor.
Conductivity  e n p  n  p  where n, p a r e c o n c e n t r a t i o n s o f D o p a n t s .

n & are mobility’s of electron and hole respectively.

p 

Diode equation

   
Vd

Is 
    
kT nV T

V
IdT e; K= Boltzman
1 Constant
q

 V T •  kT NANP 
V d 
> r
 "d
d
'o q n  


> T 00 C273; q 1.602  1 0 1 9  C

> Diode drop changes @2.2mv/0 C , Leakage current Is doubles on 100C

> Diffusion capacitance is cd dq of forward biased diode it is I

dv
> Transition capacitance CT is capacitance of reverse biased diode V n n 1 2 to
13

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> ZENER DIODE FWD Bias Normal
si Diode 0.7 V Drop
Reverse Bias
Zener drop V z forV V z

> ZENER REGULATOR

> I s V i V z ; Vi Vz
Rs
> z

r V I z
z

> TUNNEL DIODE

> Conducts in f,r

b b , Quantum mechanical tunneling in region a-0-b-c.
> -ve resistance b-c, normal diode c-d.
Ip = peak current, Iv = valley current; v =peak voltage ≈ 65 mV,vv=valley voltage
p
0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.

> VARACTOR DIODE

Used in reverse bias & as tuning variable capacitance.

K C o
>CT ; n=0.3 for diffusion, n=0.5 for alloy junction, CT 
 1 V R  
n

VTV R n


      V T 

CB is figure of merit, Self resonance 1

C25 fo
2 L C
 
ST

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> PHOTO DIODES

-4-

> Diode used in reverse bias for light detection.

> Different materials have individual peak response to a range of wave lengths.

> BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC

nE nE
> Components of current are I nE , IpE at EB junction where 

InEI  I
pE E

I nc
~   Emitter efficiency,  *  transportation factor.
I nE
> BE f / b; BC r /b

I e I bI c
I I
    ;c    

c
Ie Ib
Doping Emitter Highest
Base Lowest

I e I c I b

> Leakage currents : ICBO , ICEO , IEBO >

I CEO 1  I CBO
  

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> 3 Configurations are used on BJT, CE, CB & CC

IC

 
VCE
IB
COMPARISON

BE BC

SATURATION f/b f/b

ACTIVE f/b r/b

AMPLIFIER COMPARISON

CUT OFF r/b r/b

CB CE CF

Ri LOW MED HIGH

AI AI 
 1 

AV High High <1

Ro High High low

> FIELD EFFECT TRANSISTOR, FET is Unipolar Device

Construction n-Channel p-Channel

> S=Source, G=Gate, D=Drain

> GS Junction in Reverse Bias Always
> Vgs Controls Gate Width
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> MOSFET: Metal Oxide Semiconductor FET, IGFET

De pletion Type Mosfet Symbols Enhancement Mosfet

> Depletion Type MOSFET can work width V gs 0 and Vgs0
MOSFET JPET

High 1010 108

Ri

R 0 50 k 1m 

Depletion Depletion
Enhancement Mode Mode
Transfer Forward
Characteristics Characteristics Delicate Rugged

> Enhancement MOSFET operates with, VgsVt VtThreshold Voltage

,

Forward Characteristics Transfer Characteristics

VDS (s at) VGSV T , Ids (ON ) K VGS V T



2


JFET ID Table COMPARISIONS

BJT FET
Vgs ID
0 IDSS Current controlled Voltage controlled
IDSS
0.3 VP High gain Med gain
2
IDSS Bipolar Unipolar
0.5 VP 4 Temp sensitive Little effect of T
VP 0 High GBWP Low GBWP

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