Product specification

TO-92 Plastic-Encapsulate Transistors

9013S TRANSISTOR (NPN) TO-92

FEATURES
z Complementary to 9012S 1. EMITTER
z Excellent hFE linearity
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Dissipation 625 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 5 V

Collector cut-off current ICBO VCB= 40V , IE=0 0.1 μA

Collector cut-off current ICEO VCE=20V , IE=0 0.1 μA

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA

hFE(1) VCE=1V, IC=50mA 64 400

DC current gain
hFE(2) VCE=1V, IC= 500mA 40

Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V

Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V

Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz

CLASSIFICATION OF hFE(1)

Rank D E F G H I J

Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400

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 S9013S
Product specification
Static Characteristic hFE —— IC
100 1000
COMMON EMITTER
COMMON
VCE=1V
480uA EMITTER
Ta=25℃
80
(mA)

420uA

hFE
Ta=100℃
360uA

DC CURRENT GAIN
IC

60
COLLECTOR CURRENT

300uA Ta=25℃
100
240uA
40
180uA

120uA
20

IB=60uA

0 10
0 4 8 12 16 20 1 3 10 30 100 500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
500 2000

300
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
1000

VOLTAGE VBEsat (mV)

Ta=25℃
VOLTAGE VCEsat (mV)

100
Ta=100℃

Ta=100℃

30 Ta=25℃

β=10 β=10
10 100
1 3 10 30 100 500 1 3 10 30 100 500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE fT —— IC
100 1000
COMMON EMITTER VCE=6V
VCE=1V Ta=25℃
(MHz)

30
(mA)

300
fT
IC

10
TRANSITION FREQUENCY

Ta=100℃
COLLECTOR CURRENT

3 100

Ta=25℃
1

0.3

0.1 10
0.0 0.2 0.4 0.6 0.8 1.0 2 10 30 100

BASE-EMMITER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)

Cob/ Cib —— VCB/ VEB PC —— Ta

100 700
f=1MHz
IE=0/ IC=0
600
COLLECTOR POWER DISSIPATION

Ta=25℃
Cib
30
500
(pF)

PC (mW)
C

400

10 Cob
CAPACITANCE

300

200
3

100

1 0
0.1 0.3 1 3 10 20 0 25 50 75 100 125 150
REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (℃ )

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