ii. What is a clamper? Discuss the operation of a positive clamping circuit with the help of Reg. No.

circuit diagram and wave forms.

31. a. Sketch the input and output characteristics of common collector configuration and explain B.Tech. DEGREE EXAMINATION, MAY 2018
the operation. 1st to 6rh Semester

(oR) 15EC2O1J _ ELECTRON DEVICES

b.i. Derive the operating point of a CE transistor amplifier that uses potential divider bias. (For the candidates admitted during the academic year 2015 - 2A16 onwards)
Note:
ii. Determine the operating point for the circuit of a potential divider bias arrangement with (i) Part - A should be answered in OMR sheet within frst 45 minutes and OMR sheet should be handed
Rt=39Ko-, R2=3.9 KQ., Rc =10 Kg>,Vcc=2V, f =fiO and Rp =1.5 Kf). (ii)
over to hall invigilator at the end of 45s minute.
Part - B and Part - C should be answered in answer booklet.
32. a. Explain the construction, operation and V-I characteristics of P-channel E-MOSFET.
Time: Three Hours Max. Marks: 100
(oR)
b. Derive and determine the Vgg, Ip, Vpg, Vgand Vp for the self-bias configuration of PART-A(20x1=20Marks)
Answer ALL Questions
D-MOSFET if IDSS =8 mA, Rs =1 KO, VDD =20 V, IOe=2.6 mA, RD =33 KA,
The most commonly used semiconductor is
k=lMel andVp=-6V. 1.
(A) Germanium (B) Silicon
(C) Carbon (D) Sulphur
***r<*
2. The tum on voltage of germanium diode is Voit.
(A)
0.7 (B) 0.3
(c) 1 (D) 0.1

3. The reverse current in a diode is of the order of

(A) kA (B) mA
(c) pA (D) A

4. When we apply reverse bias to ajunction diode, it

(A) Lowers the potential barrier (B) Raises the potential barrier
(C) Greatly increases the minority carrier (D) Greatly increases the majority carrier
curent current

5. APD's are preferred over PIN diodes because of

(A) Speed of operation (B) Higher sensitivity
(C) Largerbandwidth (D) Larger power handling capacity

6. When the reverse bias voltage of a varactor diode increases, its

(A) Capacitance decreases (B) Leakage current decreases
(C) Negative resistance increases (D) Depletion region decreases

7 . What type of diode is commonly used in electronic tuners in TVs?

(A) Varactor (B) Schottlqy
(c) LED (D) Gunn
8. The normal operating region for aZener diode is the
(A) Forward-bias region (B) Reverse-biasregion
(C) Zero-crossingregion (D) Reverse-breakdownregion

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 9. Efficiency of a centre tapped fulIwave rectifier is PART-B(5x4:20Marks)
(A) 40.6% (B) 8r.2% Answer ANY FM Questions
(c) 3s.8% (D) 8r.7%
21. List out the applications of PN junction diode.
10. Voltage multipliers are circuits best used to produce
(A) Low voltage and low current (B) Low voltage 22. Draw diode equivalent model for PN junction diode under forward and reverse bias.
and high cunent
(C) High voltage and low current (D) High voltage and high current 23. Explain the principle behind the laser diode with a neat sketch.
24. Write the significance of graded doping in step recovery diode.
11. A circuit that removes positive or negative parts of waveform is called
(A) Clamper (B) Clipper 25. Write a short note on precision half wave rectifier.
(C) Rectifier (D) Regulator
26. Draw a CE transistor h-parameter model and define forward current ratio.
12. Calculate the average DC voltage in a half wave rectifier with V* = 32.5 V 27. Write the operation of MOSFET as switch.
(A) 20Y (B) 10.3 v
(c) e.s v (D) 20.s v PART - C (5 x 12 = 60 Marks)
Answer ALL Questions
13. What is the current gain for a common base configuration where
In:4.2mA and Ic=4mA? 28. a.i. A silicon PN junction has a reverse saturation current of 40 nA at a temperature of 300 K.
(A) 0.es (B) 16.8
Calculate the junction curtent when the applied voltage is (4 Marks)

(c) 1.05 (D) 0.2

(1) 0.7 V forward bias
(2) 10 V reverse bias
14. In a transistor, base current is about of emitter current. ii. With the help of a neat sketch, explain the operation of PN junction diode in forward and
(A) 2s% (B) 20% reveres bias. (8 Marks)
(c) 3s% (D) s%
(oR)
b. Draw and explain energy band structure of PN diode with relevant equations.
1 5. If the value of o is 0.9, then value of B is
(A) e (B) 0.9 29. a. Discuss the different types of junction breakdown that can occur in a reverse biased diode.
(c) e00 (D) 90 Sketch the circuit symbol for a Zener diode and briefly explain its operation. Show that the
Zener diode can be used as a voltage regulator.
16. Hybrid n model is for analysis. (oR)
(A) Low frequency (B) Mid frequency b. Describe the construction and operation of IMPATT diode with relevant diagrams and also
(C) High frequency (D) Zero frequency mgntion its applications.
30. a. Explain the operation of bridge rectifier circuit and sketch the input and output waveforms.
t7. Common drain configuration used as
(A) Voitage amplifier (B) Current amplifier
List its advantages and disadvantages.
(C) Impedance matching circuits (D) Voltage regulator (oR)
b.i. Determine the output waveform for the network shown below.
18. Threshold voltage of N-channel enhanced-MOSFET is
(A) Zerc (B) Low negative
(C) High negative (D) Positive
19. The effective channel lenglh of a MOSFET in saturation decreases with increases in
(A) Gate voltage (B) Drain voltage
(C) Source voltage (D) Body voltage
20. CMOS stands for
(A) Common MOS (B) Coherent MOS
(C) Cathode MOS (D) Complementary MOS

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