Physical Realization of Logic Gates
Physical Realization of Logic Gates
Physical Realization of Logic Gates
The purpose of this lecture is to present a set of models which show how logic gates are made, and how they
behave in practice. We will set the scene by discussing what is meant by a physical model. It is important to re-
alise that our understanding of the laws of nature is just an approximation.This is true for any branch of physics.
For example, by means of Newton’s laws we can explain to a high degree of accuracy the orbits of the planets
in the solar system. Until the end of the last century it was widely believed that Newton’s laws were correct,
since they fitted data exactly to the precision that could be measured. However, when more accurate means
of measuring the planetary motion were found, it was discovered that the orbits deviated from the predictions
made from Newton’s laws by very small amounts that couldn’t be attributed to experimental error. Hence it had
to be concluded that Newton’s laws were only approximately correct, and a more complex and accurate theory
was required. This was provided by quantum mechanics, but particle physics again demonstrated that this was
also only approximate and worse still that it was not possible to make complete measurements. It remains a
conjecture as to whether there really are laws of physics and whether we can discover them. However, the ap-
proximate theories are still of use since they provide models of the real world that we can use in design. In many
instances we are interested in the simplest model that we can find that encapsulates the physical behaviour of
the system we are designing. For example, it would clearly be ludicrous to use quantum mechanics if we were
designing a car, since Newtonian mechanics will be more accurate than we need. Further, for the bearing parts
of a machine, which are machined accurately and lubricated, we would choose a simple mechanical model in
which friction did not appear. Thus, we see that we pick a model to suit the purpose and accuracy required by
our task, and we will now investigate how this is done for logic design.
We have already been using an approximate model in the form of Boolean algebra. We saw at the end of the
last lecture that there are details that are not represented by Boolean algebra - such as the area of silicon used
to implement a circuit - that need to be considered to obtain the best design. We will find a further limitation
of Boolean algebra when we come to consider timed circuits. In order to understand those limitations more
deeply we now introduce a more detailed model of how digital circuits operate.
The components found in logic gates are of three kinds: resistors, capacitors and transistors. For our
simplest models we will ignore the capacitors. The resistors will be modelled by Ohm’s law, which states that
the electric current flowing in the resistor is related to the voltage difference across the ends by the equation
V = IR. (This of course is only an approximate model but is sufficiently accurate for logic circuit design at
any level of detail).
We will start with a very simple, procedural model of the transistor. It has three terminals marked G, S and
D, standing for the Gate (G), the Source (S) and the Drain (D), and it obeys the following rules:
2. If the voltage between G and S (Vgs) is less than 0.5 volts the switch is
open and there is no connection between D and S.
3. If the voltage Vgs is greater than 1.7 volts the switch is closed and D is
connected directly to S.
Although this is a highly simplified model it contains the sufficient detail to explain how the gates are
constructed to compute the correct logic. An inverter is shown in Figure 1, and we shall consider how it works.
Suppose that the input voltage (which in this case is the same as the voltage Vgs in the rules above) is set to
zero. The switch remains open, and so there is nothing connected to the S terminal. It is therefore not possible
for any current to flow through the resistor, and the voltage drop across it is therefore zero by Ohm’s law. Thus
the output voltage is the same as the battery voltage, that is 5v. Now suppose that a voltage of 5 volts was
applied to the input (Vin=Vgs=5v). The switch now closes, and there is a voltage of 5V across the resistor.
Current flows, and the voltage at the output becomes zero, since it is connected through the transistor to the 0v
line. Hence, if we think of 5v as logic state 1 and 0v as logic state 0, we can see that the circuit is an inverter.
Figure 2 shows how the inverter is simply adapted to make NAND and NOR gates. In the case of the NAND
gate, it is clear that both transistor switches must be closed before the output voltage is connected to the 0v
battery terminal, and therefore becomes 0. For the NOR gate either transistor can make the connection. Clearly
we can construct AND and OR gates by adding an inverter stage after the NAND and NOR gates respectively.
This explains why the AND and OR gates take up more silicon area than the NAND and NOR gates. The XOR
gate can be constructed from four NAND gates, though in practice there is a simpler implementation which we
will not discuss.
Although this simple transistor model captures all the logic behaviour correctly, and tells us something
about the size of the final implementation, it does not tell us anything about how fast our circuit will work.
As we will see this is a very important question, particularly for modern computer design. Thus the next new
property we consider is the transistor time delay which we denote td. We can think of this as the length of time
it takes to close or open the switch. This can be expressed best in the form of an idealised timing diagram.
Consideration of the time delay is important since we need to ensure that the correct logic values are present
The next refinement that we make to our transistor model takes account of the fact that the switch does not
change instantaneously. In fact it is more accurately modelled as a variable resistor rather than a switch. The
relationship between the gate voltage and the resistance between the source and drain is called the transistor
characteristic, and looks typically like Figure 4(a). It will be seen that the change in resistance is gradual, and
there is a band during which the transistor is said to be changing state. This is in contrast to the simpler switch
model where the change of state was instantaneous.
To complete the picture we must make one further refinement which is to add a capacitor between the G
terminal and the D terminal. The model of the transistor could now be depicted by the symbol shown in Figure
4(b), but to make drawings simpler, we will adopt the normal symbol also shown in Figure 4(b). We now have
a fairly accurate model of the NMOS silicon transistor.
The effect of the capacitor is to prevent the voltage on the gate changing instantaneously. To see this we
need to discuss the behaviour of a capacitor. This is governed by the equation:
a second transistor. The second transistor isn’t shown in the diagram - just its capacitor. To make the analysis
simple we will choose the switch model for the first transistor, so while A is at logic 1, the voltage across the
capacitor is zero. If we denote it as V we have the following equations:
5 − V = IR (Ohm’s law modelling the resistors behaviour)
5 − V = RC dV (eliminate I using the capacitor law above)
dt
(5
Z − V )dt = RCdV
Z Z
1
(1/RC)dt = (1/(5 − V ))dV (remember (1/(aV + b))dV = ln(aV + b) )
a
t/RC + k = −ln(5 − V ) (since we take V = 0 at t = 0 it follows that k = −ln(5))
5 − V = exp(−t/RC + ln(5))
= exp(−t/RC)exp(ln(5))
= 5exp(−t/RC)
V = 5(1 − exp(−t/RC))
This yields the output voltage shown in the timing diagram of Figure 5. Notice that the voltage will never
reach 5v, and that the bigger the value of C the longer the time taken for V to rise. The second thing that we
now must note is that since no voltage ever changes instantaneously, there will be a period of time when it
is not possible to determine whether the transistor has changed or not. In other words the gate will not be at
either logic 0 or at logic 1, it will be in a non-deterministic state. It is principally the input capacitance that is
responsible for the time delay td that we introduced earlier on.
We can now describe with greater accuracy what happens when an inverter changes state. Since in our more
accurate model there is a variable resistor between the source and drain, the circuit can be viewed as a potential
divider. In practice the resistor used will be chosen to be in the middle of the transistor range, so that it is small
compared with the largest resistance of the transistor, and big by comparison with the smallest resistance. Since
the resistance of the transistor is never infinite and never zero, the output voltage is never either zero or 5 volts,
but in practice ranges between about 0.2 and about 3.5 volts, with a non deterministic band stretching from
roughly 0.5 to 1.5 volts. Thus, in practice our waveforms will look like this.
One last feature should be observed, and this is that there is a second capacitor which goes between the gate and
the source. (It is in fact a symmetric device, so we can swap the source and drain connections.) The addition
of the second capacitor does not change the behaviour except when the gate is not connected to anything when
it will drift up towards 5v. Thus the default input is logic 1, and not logic 0 as we might suppose. This means
that all inputs to a circuit that we require to be 0v must be physically connected to the 0v terminal of the power
supply.