DANANG UNIVERSITY OF TECHNOLOGY

(FAST)
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LAB REPORT
Subject: EE215
Fundamentals of Electrical Engineering

Student: Nguyễn Văn Minh Nhân

Class: 17ECE2

Da Nang: 06/2019
 Laboratory 1 – Introduction to Circuit Analysis
Procedure 1: Ohm’s Law

Laboratory 2 – Nodal Analysis and Thévenin

Equivalents
Objectives:
• Construct, analyze and measure multiple-source circuits
• Model transistors as dependent sources, and confirm the model with
measurements
• Develop Thévenin equivalent models of real world components (a potato battery!)
• Design an experiment to determine a Thévenin equivalent model (of a diode)

Parts for This Lab:

For parts (or, types of parts, like resistors) that you have already used in Lab 1, you
should be able to pick the parts out from the circuit diagram and find them in your
part kit. This section will discuss parts you have not worked with yet. These are:
• A raw potato
• Copper and tin (galvanized) nails
• Red Light Emitting Diode (LED)
• Bipolar Junction Transistor (BJT), NPN, 2N3904

Procedure 1: Node and Mesh Analysis, Thévenin Equivalent

- Construct the circuit:

a. Calculate the voltage v across the 20 kΩ resistor using node voltage analysis.

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 𝑉−9 𝑉 𝑉 − 1.5
+ + = 0 => 𝑉 = 3.1448
(8.2 + 10)103 20 ∗ 103 10 ∗ 103
b. Calculate the current i through the 20 kΩ resistor using mesh current analysis.
𝑉 3.1448
𝐼= = = 0.158 𝑚𝐴
20 ∗ 10−3 20 ∗ 10−3
c. Measure the voltage v across the 20 kΩ resistor. Measure the current i through
the 20 kΩ resistor. Are these values consistent with your calculations in parts a and
b? Explain any differences. (Remember to return your meter to voltage
measurement or off as soon as you have completed the current measurement).
Vreality = 3.168 V
Ireality = 0.162 mA
*Comment: the measured values are a little bit larger from calculated values due to
resistors tolerance and inner resistance in each source, and the accuracy of the
measuring device also affect directly to the result.

d. Compute the values of the Thévenin equivalent seen by the 20 kΩ resistor using
circuit analysis techniques. Draw the equivalent circuit and list the values.
*Circuit analysis technique: Source transformation
_ 𝑅𝑒𝑞 =(10 kΩ+ 8.2 kΩ)//10 kΩ = 6.454 kΩ
_ Apllying KCL
9 − Va Va − 1.5
− =0
18.2 kΩ 10 kΩ
+ Req = 6.454 kΩ
+ veq = 4.159 V
* Equivalent circuit

e. Remove the 20 kΩ resistor from the circuit you built and measure the open circuit
voltage v. Replace the 20 kΩ resistor with a short circuit (your multimeter set on
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current works nicely) and measure the short circuit current i. Use these values to
compute a Thévenin equivalent. Compare to the Thévenin equivalent from part d.
+ The measured voltage between two terminals of removed 20kΩ
resistor:
vth = 4.162 (V)
+ The measured current through short circuit of removed
20kΩ:
ith = 0.654 (mA)
+ The Thevenin equivalent resistance:
𝑣
Rth = 𝑡ℎ = 6.363 (kΩ)
𝑖𝑡ℎ

*Comment: the measured and computed values of vth and Rth are closed to those
calculated values in part d. The difference occurs due to resistor’s tolerance and
the accuracy of the measuring device also affect directly to the result.

Procedure 2: Thévenin Equivalents as Models

Computing Thévenin equivalents is easy when the circuit components have
known values. Computing equivalents from measured values is easy when open
circuit voltage and short circuit current is available. What about components with
unknown quantities, that should not be short circuited? That's what this procedure
covers.
Ideal voltage sources have zero internal resistance (Req = 0) but real voltage
sources have non-zero internal resistance. For many applications, the non-zero
resistance is important. In this procedure you will determine internal resistance by
finding Thévenin Equivalent circuits for two real voltage sources, a 1.5V AA
battery and a potato.
Pay attention to the values of Req!

a. Connect a 100 Ω resistor and the 1.5 V AA battery as shown in Figure P2-
Measure the open circuit voltage and the short circuit current at the circuit
terminals, marked a and b in Figure P21. Do NOT short circuit the battery all by
itself, i.e. always have the 100 Ω resistor in the circuit. If you like, you can find
current by measuring the voltage across the resistor and applying Ohm's Law. This
is a safer way of measuring current than using an ammeter. If you do this, consider
whether you should use the nominal or measured value of the resistance.

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*Measurement
+ The measured open circuit voltage:
v(m) = 1.532 V
+ The measured short circuit current:
i(m) = 14.9 (mA)
b. Using the measurements made in part a, calculate the Thévenin Equivalent
circuit for the battery and series resistor taken together. Then calculate the internal
resistance of the battery. Draw the Thévenin Equivalent of the battery, only. Label
values.
𝑣(𝑚)
The thevenin equivalent resistance: Rth = = 102.82 (Ω)
𝑖(𝑚)
Internal resistance of the source: Rs = Rth – 100 = 2.82Ω

c. Stick a piece of zinc (the galvanized nail is zinc coated onto iron) into one end of
your raw potato and a piece of copper (the copper nail, although a penny will work)
into the other end. Connect a 100 Ω resistor in series with the potato. (Alligator
clips help here.) Measure the open circuit voltage and short circuit current at the
circuit terminals.

Potato battery
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 + The measured open circuit voltage of potato:
vp (m) = 0.78 V
+ The measured short circuit current of potato:
ip (m) = 0.006 (mA)
d. Calculate and draw the Thévenin Equivalent circuit for the potato battery without
the 100 Ω resistor.
𝑣𝑝 (𝑚)
Req = = 130kΩ
𝑖𝑝 (𝑚)
Rp = Req – 100 = 129.9kΩ

e. Which is a better battery, and why?

The battery is much better since the internal resistance is much smaller than
that of potato with much higher voltage developed.
Internal resistance would depend on ion mobility inside a potato, moisture
content, mineral content, size of potato so it is not stable as a battery and easy to run
out of energy when it goes bad.

Procedure 3: Dependent sources

Unlike resistors or capacitors, you can't buy a dependent source off the shelf.
At least, not a cheap one. However, dependent sources are the basis of models for
important electronics components, like the Bipolar Junction Transistor (BJT). In
this procedure, you will determine the parameters (current gain, β, and base-to-
emitter voltage vBE) of a dependent source model for a BJT.
A BJT has three connections, which appear as pins emerging from the
transistor package. They are the collector, emitter and base. A simple model of the
BJT is that current flow into the base controls the current flow between the collector
and emitter. Thus a Current Controlled Current Source (CCCS) can be used as a
model. The base is connected to the emitter through a voltage source, vBE.. Figure
P3-1 shows the transistor package pins, the transistor circuit symbol, and the CCCS
model.

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a. Construct the circuit of figure P3-2 using the bipolar junction transistor (BJT). Adjust the trim pot to obtain a voltage between the
collector and emitter of the transistor, vCE, of approximately 5 volts Measure and record the battery voltage, the voltage across the 20
kΩ resistor R1, the voltage across the 10 kΩ resistor R2, the voltage between the base and emitter of the transistor, vBE, and the voltage
between the collector and emitter of the transistor, vCE. Calculate the currents passing through R1 and R2, iB and iC, respectively, from
the voltages measured in part a, and Ohm's Law.
Hint: The 10 turn pot is the long rectangular one. Mount it on the breadboard so the adjustment screw is close to one
end of the board.

b. Use the results of part a to compute the parameters of the CCCS model for the transistor, vBE and current gain β.

c. Redraw the circuit replacing the transistor with the CCCS model, using the parameters computed in part b. (Don't worry about the
potentiometer setting in your drawing.)

d. Assume the potentiometer is set so base current iB = 3.50 μA. Find the voltage across R1 for this base current. Calculate the
collector-emitter voltage vCE from the circuit of part c for this base current. In the physical circuit, adjust the potentiometer to obtain
the voltage across R1 you just computed. Measure the voltage from the transistor emitter to collector, vCE.. Compare the computed and
measured values. Comment on differences.

e. Look up the data sheet for the 2N3904 transistor by searching for the part number on the Web. Compare your values of β and vBE to
those in the data sheet. (Note: β may appear as hFE in the data sheet.) Comment on differences.