4 Pin Dip Phototransistor Photocoupler EL817-G Series: Features

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4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817-G Series

Schematic

Features: Pin Configuration


1. Anode
• Halogens free. 2. Cathode
• Current transfer ratio 3. Emitter
(CTR: 50~600% at IF =5mA, VCE =5V) 4. Collector
• High isolation voltage between input
and output (Viso=5000 V rms )
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact small outline package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved
• CQC approved

Description
The EL817-G series of devices each consist of an infrared emitting diodes, optically
coupled to a phototransistor detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Applications
• Programmable controllers
• System appliances, measuring instruments
• Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances

1 Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Absolute Maximum Ratings (Ta=25℃)

Parameter Symbol Rating Unit

Forward current IF 60 mA

Peak forward current (1us, pulse) IFP 1 A


Input Reverse voltage VR 6 V
100 mW
Power Dissipation PD
2.9 mW/°C

150 mW
Break Down Voltage PC
5.8 mW/°C

Output Collector current IC 50 mA

Collector-Emitter voltage VCEO 80 V

Emitter-Collector voltage VECO 7 V


Total Power Dissipation PTOT 200 mW
1
Isolation Voltage* VISO 5000 V rms
Operating Temperature TOPR -55 to 110 °C
Storage Temperature TSTG -55 to 125 °C
2
Soldering Temperature* TSOL 260 °C

Notes:
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*2 For 10 seconds

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)

Input
Parameter Symbol Min. Typ. Max. Unit Condition

Forward Voltage VF - 1.2 1.4 V IF = 20mA


Reverse Current IR - - 10 µA VR = 4V
Input capacitance Cin - 30 250 pF V = 0, f = 1kHz

Output

Parameter Symbol Min Typ. Max. Unit Condition

Collector-Emitter dark
ICEO - - 100 nA VCE = 20V, IF = 0mA
current
Collector-Emitter
BVCEO 80 - - V IC = 0.1mA
breakdown voltage
Emitter-Collector
BVECO 7 - - V IE = 0.1mA
breakdown voltage

Transfer Characteristics

Parameter Symbol Min Typ. Max. Unit Condition

EL817 50 - 600
EL817A 80 - 160
EL817B 130 - 260
Current
Transfer EL817C CTR 200 - 400 % IF = 5mA ,VCE = 5V
ratio 300
EL817D - 600
EL817X 100 - 200
EL817Y 150 - 300
Collector-Emitter
VCE(sat) - 0.1 0.2 V IF = 20mA ,IC = 1mA
saturation voltage
VIO = 500Vdc,
Isolation resistance RIO 5×1010 - - Ω
40~60% R.H.
Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz
VCE = 5V, IC = 2mA
Cut-off frequency fc - 80 - kHz
RL = 100Ω, -3dB
Rise time tr - 6 18 µs VCE = 2V, IC = 2mA,
Fall time tf - 8 18 µs RL = 100Ω

* Typical values at Ta = 25°C

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Typical Electro-Optical Characteristics Curves

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

VCC

IF Input
IC RL
Pulse
Output

Input 10%
Output
RIN Pulse
90%
tr tf
ton toff

Figure 7. Switching Time Test Circuit & Waveforms

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Order Information

Part Number

EL817X(Y)(Z)-FVG

Note

X = Lead form option (S, S1, S2, M or none)


Y = CTR Rank (A, B, C, D, X , Y or none)
Z = Tape and reel option (TA, TB, TU, TD or none).
F = Lead frame option (F: Iron, None: copper)
V = VDE safety (optional).
G = Halogens free

Option Description Packing quantity


None Standard DIP-4 100 units per tube

M Wide lead bend (0.4 inch spacing) 100 units per tube

S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel

S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel

S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel

S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel

S2 (TA) Surface mount lead form (Gull-wing) + TA tape & reel option 500 units per reel

S2 (TB) Surface mount lead form (Gull-wing) + TB tape & reel option 500 units per reel

S (TU) Surface mount lead form + TU tape & reel option 1500 units per reel

S (TD) Surface mount lead form + TD tape & reel option 1500 units per reel

S1 (TU) Surface mount lead form (low profile) + TU tape & reel option 1500 units per reel

S1 (TD) Surface mount lead form (low profile) + TD tape & reel option 1500 units per reel

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Package Dimension (Dimensions in mm)

Standard DIP Type

Option M Type

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Option S Type

Option S1 Type

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Option S2 Type

Recommended pad layout for surface mount leadform


For S and S1 option For S2 option

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Device Marking

EL
817
RYWWV

Notes

EL denotes EVERLIGHT
817 denotes Device Number
R denotes CTR Rank (A, B, C, D or none)
Y denotes 1 digit Year code
WW denotes 2 digit Week code
V denotes VDE (optional)

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Tape & Reel Packing Specifications

Option TA Option TB

Direction of feed from reel Direction of feed from reel

Tape dimensions

Tape dimensions

Dimension No. A B Do D1 E F

Dimension (mm) 10.5±0.1 4.65±0.1 1.55±0.1 1.50±0.1 1.75±0.1 7.5±0.1


Dimension (mm)
S2 12.15±0.1 4.65±0.1 1.55±0.1 1.50±0.1 1.75±0.1 7.5±0.1

Dimension No. Po P1 P2 t W K

Dimension (mm) 4.0±0.1 12.0±0.1 2.0±0.1 0.35±0.1 16.0±0.3 4.75±0.1

Dimension (mm)
S2 4.0±0.1 16.0±0.1 2.0±0.1 0.35±0.1 16.0±0.3 3.90±0.1

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Option TD Option TU

Direction of feed from reel Direction of feed from reel

Tape dimensions

Dimension No. A B C D E F

Dimension(mm) 16.00±0.3 7.5±0.1 1.75±0.1 8.0±0.1 2.0±0.1 4.0±0.1

Dimension No. G H I J K L

Dimension(mm) 1.55±0.05 10.4±0.1 0.4±0.05 4.60±0.1 5.1±0.1 1.55±0.05

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

Precautions for Use

1. Soldering Condition
1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile

Note: Reference: IPC/JEDEC J-STD-020D

Preheat
Temperature min (Tsmin) 150 °C
Temperature max (Tsmax) 200°C
Time (Tsmin to Tsmax) (ts) 60-120 seconds
Average ramp-up rate (Tsmax to Tp) 3 °C/second max

Other
Liquidus Temperature (TL) 217 °C
Time above Liquidus Temperature (t L) 60-100 sec
Peak Temperature (TP) 260°C
Time within 5 °C of Actual Peak Temperature: TP - 5°C 30 s
Ramp- Down Rate from Peak Temperature 6°C /second max.
Time 25°C to peak temperature 8 minutes max.
Reflow times 3 times

13 Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7 www.everlight.com

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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series

DISCLAIMER

1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for
above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in
these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the
product which does not comply with the absolute maximum ratings and the instructions included in these
specification sheets.
3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t
reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.

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