4 Pin Dip Phototransistor Photocoupler EL817-G Series: Features
4 Pin Dip Phototransistor Photocoupler EL817-G Series: Features
4 Pin Dip Phototransistor Photocoupler EL817-G Series: Features
EL817-G Series
Schematic
Description
The EL817-G series of devices each consist of an infrared emitting diodes, optically
coupled to a phototransistor detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
• Programmable controllers
• System appliances, measuring instruments
• Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Forward current IF 60 mA
150 mW
Break Down Voltage PC
5.8 mW/°C
Notes:
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*2 For 10 seconds
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Input
Parameter Symbol Min. Typ. Max. Unit Condition
Output
Collector-Emitter dark
ICEO - - 100 nA VCE = 20V, IF = 0mA
current
Collector-Emitter
BVCEO 80 - - V IC = 0.1mA
breakdown voltage
Emitter-Collector
BVECO 7 - - V IE = 0.1mA
breakdown voltage
Transfer Characteristics
EL817 50 - 600
EL817A 80 - 160
EL817B 130 - 260
Current
Transfer EL817C CTR 200 - 400 % IF = 5mA ,VCE = 5V
ratio 300
EL817D - 600
EL817X 100 - 200
EL817Y 150 - 300
Collector-Emitter
VCE(sat) - 0.1 0.2 V IF = 20mA ,IC = 1mA
saturation voltage
VIO = 500Vdc,
Isolation resistance RIO 5×1010 - - Ω
40~60% R.H.
Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz
VCE = 5V, IC = 2mA
Cut-off frequency fc - 80 - kHz
RL = 100Ω, -3dB
Rise time tr - 6 18 µs VCE = 2V, IC = 2mA,
Fall time tf - 8 18 µs RL = 100Ω
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
VCC
IF Input
IC RL
Pulse
Output
Input 10%
Output
RIN Pulse
90%
tr tf
ton toff
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Order Information
Part Number
EL817X(Y)(Z)-FVG
Note
M Wide lead bend (0.4 inch spacing) 100 units per tube
S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel
S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel
S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel
S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel
S2 (TA) Surface mount lead form (Gull-wing) + TA tape & reel option 500 units per reel
S2 (TB) Surface mount lead form (Gull-wing) + TB tape & reel option 500 units per reel
S (TU) Surface mount lead form + TU tape & reel option 1500 units per reel
S (TD) Surface mount lead form + TD tape & reel option 1500 units per reel
S1 (TU) Surface mount lead form (low profile) + TU tape & reel option 1500 units per reel
S1 (TD) Surface mount lead form (low profile) + TD tape & reel option 1500 units per reel
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Option M Type
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Option S Type
Option S1 Type
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Option S2 Type
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Device Marking
EL
817
RYWWV
Notes
EL denotes EVERLIGHT
817 denotes Device Number
R denotes CTR Rank (A, B, C, D or none)
Y denotes 1 digit Year code
WW denotes 2 digit Week code
V denotes VDE (optional)
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Option TA Option TB
Tape dimensions
Tape dimensions
Dimension No. A B Do D1 E F
Dimension No. Po P1 P2 t W K
Dimension (mm)
S2 4.0±0.1 16.0±0.1 2.0±0.1 0.35±0.1 16.0±0.3 3.90±0.1
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Option TD Option TU
Tape dimensions
Dimension No. A B C D E F
Dimension No. G H I J K L
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
1. Soldering Condition
1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile
Preheat
Temperature min (Tsmin) 150 °C
Temperature max (Tsmax) 200°C
Time (Tsmin to Tsmax) (ts) 60-120 seconds
Average ramp-up rate (Tsmax to Tp) 3 °C/second max
Other
Liquidus Temperature (TL) 217 °C
Time above Liquidus Temperature (t L) 60-100 sec
Peak Temperature (TP) 260°C
Time within 5 °C of Actual Peak Temperature: TP - 5°C 30 s
Ramp- Down Rate from Peak Temperature 6°C /second max.
Time 25°C to peak temperature 8 minutes max.
Reflow times 3 times
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
DISCLAIMER
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for
above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in
these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the
product which does not comply with the absolute maximum ratings and the instructions included in these
specification sheets.
3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t
reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.
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