Scribd
Upload
428 views13 pages

Diode Capacitance

This document discusses the frequency response and capacitance of diode circuits. It defines the diode current equation and explains how reverse saturation current is determined by diffusion constants, carrier lifetimes, and doping concentrations. It describes two types of diode capacitances: depletion or junction capacitance due to charge in the depletion region, and diffusion capacitance due to minority carrier injection. Equations are provided for drift and diffusion capacitance. Example problems calculate junction capacitance values and diffusion capacitance based on given diode parameters.

Uploaded by

Suresh Reddy Tamanampudi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
428 views13 pages

Diode Capacitance

This document discusses the frequency response and capacitance of diode circuits. It defines the diode current equation and explains how reverse saturation current is determined by diffusion constants, carrier lifetimes, and doping concentrations. It describes two types of diode capacitances: depletion or junction capacitance due to charge in the depletion region, and diffusion capacitance due to minority carrier injection. Equations are provided for drift and diffusion capacitance. Example problems calculate junction capacitance values and diffusion capacitance based on given diode parameters.

Uploaded by

Suresh Reddy Tamanampudi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 13

Analog Electronic Circuits

Unit I - Diode Frequency response

Diode Capacitance Low and High frequency Response of


diode
 Diode current equation
 VV 
I D  I S  e T  1
 
 
V voltage across diode
VT is voltage equivalent of temperature = T/11600.
(ŋ = 1 for Ge and 2 for Si)
TK = Tc + 273
Is is the reverse saturation current

 DP ni2 D n 2


I s  qV   n i 
 N  N 
 P D n A 

DP/N Diffusion constants of holes / e- s, q elementary charge, A cross sectional area, ND/A Donor and
acceptor concentrations, ni intrinsic carrier concentration, τn/p carrier lifetimes of holes/electrons.
PN Junction diode i-v characteristics
Diode capacitances
 Two charge storage phenomena

a. Charge stored in depletion region (RB)


- Drift / Depletion / Junction capacitance

b. Charge stored in n and p materials due to minority


carrier injection (FB)
- Diffusion capacitance
Drift capacitance


Drift capacitance


Diffusion capacitance

 In a forward biased PN - junction diode, the minority


carrier distribution is given in figure below
Diffusion capacitance


For a PN junction with NA = 1017/cm3 and ND =
1016/cm3, operating at T = 300 K, find
(a) the value of Cj0 per unit junction area.
(b) the capacitance Cj at a reverse bias voltage of 2V,
assuming a junction area of 2500 µm2.
Use m = 0.5, V0 = 0.728 V.

Ans: 0.0322 pF/cm2 or


0.3223 fF/µm2

0.4162 pF
A pn junction operating in the forward bias region with
a current I of 1 mA is found to have a diffusion
capacitance of 10 pF. What diffusion capacitance do you
expect this junction have at I = 0.1 mA? What is the
mean transit time for this junction?

Ans: 1 pF,
250 ps
A silicon pn junction with NA = 3×1016/cm3 and ND =
8×1015/cm3, operating at T = 300 K, has a cross-sectional area
of A = 5×10-5cm2. Determine the junction capacitance at VR =
5 V.

Ans:
0.478 pF

You might also like