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The document is an assignment from Chaibasa Engineering College for a Physics I course. It contains 8 questions about semiconductor properties and characteristics, such as deriving the expression for equilibrium hole concentration, calculating carrier concentrations given doping levels and intrinsic carrier concentrations, determining whether a material is n-type or p-type based on carrier concentrations, and calculating intrinsic carrier concentrations and Fermi level positions at different temperatures and bandgaps. Students are instructed to answer all questions in a notebook and submit it by October 13th, mentioning their name, roll number, and branch.

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Roshan Rìtìk
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74 views1 page

Assignment1 1

The document is an assignment from Chaibasa Engineering College for a Physics I course. It contains 8 questions about semiconductor properties and characteristics, such as deriving the expression for equilibrium hole concentration, calculating carrier concentrations given doping levels and intrinsic carrier concentrations, determining whether a material is n-type or p-type based on carrier concentrations, and calculating intrinsic carrier concentrations and Fermi level positions at different temperatures and bandgaps. Students are instructed to answer all questions in a notebook and submit it by October 13th, mentioning their name, roll number, and branch.

Uploaded by

Roshan Rìtìk
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Chaibasa Engineering College, Chaibasa, Jharkhand

Assignment - 1 (Physics - I, BSC 101)


(Please buy a notebook and answer all the questions in that notebook and submit to me by
13.10.2018, mention your name, roll no., and branch in the notebook)

1. Derive the expression for equilibrium hole concentration in a semiconductor.

2. A semiconductor material is doped with donor type impurities with 1015 atoms/cm3. If the
intrinsic carrier concentration is 1010 /cm3, then what will be the concentration of holes in
the doped semiconductor in equilibrium?

3. The electron concentration in silicon at T=300 K is 5x104 cm-3. Determine hole


concentration. Is this n- or p-type material?

4. For a particular semiconductor, Eg=1.50 eV, mp=10mn, T=300 K, and ni=1x105 cm-3.
Determine the position of the intrinsic Fermi energy level with respect to the center of the
bandgap.

5. If two semiconductors have exactly same properties except that the material A has a
bandgap of 1.5 eV and material B has a bandgap of 1.7 eV, then what will be the ratio of
intrinsic concentration of material A to material B at T=300 K?

6. In Si at T=300 K, if Fermi level is 0.22 eV above valence band, then what will be the
value of hole concentration? (Take NV=1.04x1019 cm-3)

7. In an intrinsic Si semiconductor, effective mass of electron is four times the effective


mass of hole. Then what will be the position of Fermi level at T=27 0C?

8. In Ge at T=200 K and T=400 K, what is the value of intrinsic carrier concentration?


(Take NC=1.04x1019 cm-3, NV=6.0x1016 cm-3 and Eg=0.66 eV at T=300 K)

Sumit Saha, Assistant Professor,


Department of ECE, Chaibasa Engineering College

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