Module / Unit - 1: P - N Diode
Module / Unit - 1: P - N Diode
p - n Diode
Review Questions:
1. In a n-semiconductor, hole concentration is less than its intrinsic value. Discuss.
2. How is depletion region formed across a p-n junction? What type of charges are
present in the depletion region when junction is not biased?
3. Draw potential energy diagrams for a forward as well as a reverse biased p-n junction
and explain the flow of currents in both the cases.
4. The width of depletion region varies with applied voltage. Explain.
5. Explain the zener and avalanche processes of p-n junction break down. How does a
zener diode stabilize voltage in a circuit? Draw the circuit and explain.
Problems:
1.1 p-silicon has resistivity of 100 Ωcm. The other parameters for silicon are:
Intrinsic carrier density, ni = 1010 cm-3,
Hole mobility, µp = 500 cm2/v.s.
Electron mobility, µn = 1200 cm2/v.s.
Calculate the number of electrons for every 5000 million holes in the semiconductor.
1
p.q. p
Therefore,
1
p 1.6 10 19 500
100
n.p = ni2
2
ni 10 20
or n 8 10 5 / cm 3
p 1.25 1014
Since for every 1.25 X 1014 holes, there are 8 X 105 electrons, therefore 5000 million (= 5 X
109) holes will have
8 10 5 5 10 9 40
32 electrons
1.25 1014 1.25
1.2 The resistivity of a silicon sample is 100 Ω cm. Calculate the hole density if silicon is p-
type and electron density if it is is n-type.
Charge mobilities are :
µp = 500 cm2/v.s
µn = 1300 cm2/v.s
Solution:
1
p.q. p
Then
1 1
p
.q. p 100 1.6 10 19 500
1
n.q. n
1 1
n
.q. n 100 1.6 10 19 1300
1.3 A germanium p-n step junction has donor density ND = 1015/ cm3 on n-side and
acceptor density NA = 1017/cm3 on p-side. Calculate the height of the potential barrier at
the junction if intrinsic carrier density ni, equals 2.5 X 1013 /cm3. Assume kT/q = 0.026V.
Solution:
kT N AND
VB ln
n2
q i
Where NA and ND are respectively acceptor and donor densities on p and n-sides and ni is
intrinsic carrier density.
Then,
1017 1015
VB 0.026 ln 2
2.5 1013
0.026 ln 1.6 10 5
0.026 11.98
Solution:
kT N A N D
VB ln 2
q ni
Therefore,
31015 2 1014
VB 0.026 ln
2 1010
2
0.026 ln 1.5 10 9
0.026 21.021
q N A N D
Solution:
The externally applied voltage, V, gives rise to maximum electric field, Emax, at the junction.
And Emax is expressed as,
1/ 2
2qN A N D
Emax VB V 1 / 2
N A N D
Now, VB << V, and junction breakdown occurs at reverse bias therefore, taking applied
voltage as negative and neglecting VB, we have
1/ 2
2qN A N D
Emax V
N A N D
( N A N D )
2
E
V max
2qN A N D
or V
2.2 10 10 1.510
5 2 12
1015
16
2 1.6 10 19 1.5 1016 1015
Vs Vz 1.5 k
RL
Solution:
The voltage drop across load RL will be constant and equal to zener voltage VZ as long as
zener diode works in reverse bias with a voltage equal to or larger than V Z,
R.I = VS - VZ
Where, I is the current through R. The minimum current required through load RL to maintain
a voltage of VZ is equal to VZ/RL.
RL
R VS VZ
VZ
or , R
24 91.5 10 3
9
or , R 2.5 k