The document describes the 2SK1611 silicon n-channel power F-MOS FET. It provides key features and specifications such as a high avalanche energy capacity of 20mJ, a drain-source breakdown voltage of 800V, and a low drain-source on-resistance of 3.2-4 ohms. The device is suitable for applications requiring high-speed switching such as in switching power supplies and AC adapters due to its low RDS(on) and fast switching characteristics. Electrical characteristics including cutoff current, leakage current, threshold voltage, and transition times are provided.
The document describes the 2SK1611 silicon n-channel power F-MOS FET. It provides key features and specifications such as a high avalanche energy capacity of 20mJ, a drain-source breakdown voltage of 800V, and a low drain-source on-resistance of 3.2-4 ohms. The device is suitable for applications requiring high-speed switching such as in switching power supplies and AC adapters due to its low RDS(on) and fast switching characteristics. Electrical characteristics including cutoff current, leakage current, threshold voltage, and transition times are provided.
The document describes the 2SK1611 silicon n-channel power F-MOS FET. It provides key features and specifications such as a high avalanche energy capacity of 20mJ, a drain-source breakdown voltage of 800V, and a low drain-source on-resistance of 3.2-4 ohms. The device is suitable for applications requiring high-speed switching such as in switching power supplies and AC adapters due to its low RDS(on) and fast switching characteristics. Electrical characteristics including cutoff current, leakage current, threshold voltage, and transition times are provided.
The document describes the 2SK1611 silicon n-channel power F-MOS FET. It provides key features and specifications such as a high avalanche energy capacity of 20mJ, a drain-source breakdown voltage of 800V, and a low drain-source on-resistance of 3.2-4 ohms. The device is suitable for applications requiring high-speed switching such as in switching power supplies and AC adapters due to its low RDS(on) and fast switching characteristics. Electrical characteristics including cutoff current, leakage current, threshold voltage, and transition times are provided.
2SK1611 Silicon N-Channel Power F-MOS FET ■ Features ● High avalanche energy capacity ● VGSS: 30V guaranteed unit: mm ● Low RDS(on), high-speed switching characteristic 10.0±0.2 4.2±0.2
0.7±0.1 ■ Applications 5.5±0.2 2.7±0.2
4.2±0.2 ● High-speed switching (switching power supply, AC adaptor)
7.5±0.2 ● For high-frequency power amplification φ3.1±0.1
16.7±0.3 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Unit Drain to Source breakdown voltage VDSS 800 V 1.3±0.2
4.0 1.4±0.1
14.0±0.5 Gate to Source voltage VGSS ±30 V
Solder Dip 0.5 +0.2 –0.1 0.8±0.1 DC ID ±3 A Drain current Pulse IDP ±6 A 2.54±0.25
Avalanche energy capacity EAS* 20 mJ
5.08±0.5 Allowable power TC = 25°C 50 1 2 3 1: Gate PD W 2: Drain dissipation Ta = 25°C 2 3: Source EIAJ: SC-67 Channel temperature Tch 150 °C TO-220 Full Pack Package (a) Storage temperature Tstg −55 to +150 °C * Single pulse
■ Electrical Characteristics (TC = 25°C)
Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 640V, VGS = 0 0.1 mA Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 800 V Avalanche energy capacity EAS* L = 4.5mH, ID = 3A, VDD = 50V 20 mJ Gate threshold voltage Vth VDS = 25V, ID = 1mA 1 5 V Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 2A 3.2 4 Ω Forward transfer admittance | Yfs | VDS = 25V, ID = 2A 1.5 2.4 S Input capacitance (Common Source) Ciss 730 pF Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz 90 pF Reverse transfer capacitance (Common Source) Crss 40 pF Turn-on time ton 40 ns VGS = 10V, ID = 2A Fall time tf 35 ns VDD = 200V, RL = 100Ω Turn-off time (delay time) td(off) 105 ns * Avalanche energy capacity test circuit
ID Gate VDS C VDD Drain
PVS Source RGS
1 Power F-MOS FETs 2SK1611
ID VDS | Yfs | ID RDS(on) ID
6 3.2 10
Drain to source ON-resistance RDS(on) (Ω)
TC=25˚C VDS=25V TC=25˚C
Forward transfer admittance |Yfs| (S)
TC=25˚C VGS=15V 10V 2.8 5 8 7V 2.4 Drain current ID (A)
6V 4 2.0 6
3 1.6
4 1.2 VGS=10V 2 5V 15V 0.8 50W 2 1 0.4
4V 0 0 0 0 10 20 30 40 50 60 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A)
ID VGS Ciss, Coss, Crss VDS ton, tf, td(off) ID
