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    Nte382 PDF

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    Yeik Frey Caro C
    This document provides specifications for the NTE382 and NTE383 silicon complementary transistors which are designed for audio frequency applications. It lists the absolute maximum ratings and typical electrical characteristics for parameters like collector-base voltage, collector current, current gain, and capacitance. These transistors can handle collector currents up to 1A continuous and 2A peak, and have a current gain of 160-320 at typical operating conditions making them suitable for audio frequency driver applications.

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    Nte382 PDF

    Uploaded by

    Yeik Frey Caro C
    28 views2 pages
    This document provides specifications for the NTE382 and NTE383 silicon complementary transistors which are designed for audio frequency applications. It lists the absolute maximum ratings and typical electrical characteristics for parameters like collector-base voltage, collector current, current gain, and capacitance. These transistors can handle collector currents up to 1A continuous and 2A peak, and have a current gain of 160-320 at typical operating conditions making them suitable for audio frequency driver applications.

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    This document provides specifications for the NTE382 and NTE383 silicon complementary transistors which are designed for audio frequency applications. It lists the absolute maximum ratings and typical electrical characteristics for parameters like collector-base voltage, collector current, current gain, and capacitance. These transistors can handle collector currents up to 1A continuous and 2A peak, and have a current gain of 160-320 at typical operating conditions making them suitable for audio frequency driver applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views2 pages

    Nte382 PDF

    Uploaded by

    Yeik Frey Caro C
    This document provides specifications for the NTE382 and NTE383 silicon complementary transistors which are designed for audio frequency applications. It lists the absolute maximum ratings and typical electrical characteristics for parameters like collector-base voltage, collector current, current gain, and capacitance. These transistors can handle collector currents up to 1A continuous and 2A peak, and have a current gain of 160-320 at typical operating conditions making them suitable for audio frequency driver applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    NTE382 (NPN) & NTE383 (PNP)

    Silicon Complementary Transistors


    Audio Frequency Driver
    Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
    Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
    Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

    Electrical Characteristics: (TA = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 120 – – V
    Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 100 – – V
    Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V
    Collector Cutoff Current ICBO VCB = 100V, IE = 0 – – 10 µA
    DC Current Gain hFE VCE = 5V, IC = 150mA 160 – 320
    VCE = 5V, IC = 500mA 30 – –
    Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA – – 1.0 V
    Base–Emitter Voltage VBE VCE = 5V, IC = 150mA – – 1.5 V
    Current Gain–Bandwidth Product fT VCE = 5V, IC = 150mA – 140 – MHz
    Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 20 – pF
    .343
    (8.73)
    Max

    .492
    (12.5)
    Min .024 (0.62) Max

    EC B

    .102 (2.6) Max


    .059 (1.5) Typ

    .102 (2.6) Max


    .197
    (5.0)

    .018 (0.48)

    .118 (3.0) Max .102 (2.6) Max

    .236 (6.0)Dia Max .102 (2.6) Max

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