VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.

PbF
www.vishay.com
Vishay Semiconductors
Three Phase Bridge (Power Modules), 45 A to 100 A
FEATURES
• Low VF
• Low profile package
• Direct mounting to heatsink
• Flat pin/round pin versions with PCB solderable
terminals
• Low junction to case thermal resistance
• 3500 VRMS insulation voltage
• UL approved file E78996 vie
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
MT...PA MT...PB please see www.vishay.com/doc?99912

APPLICATIONS
• Power conversion machines
• Welding
PRIMARY CHARACTERISTICS • UPS

IO 45 A to 100 A
• SMPS
• Motor drives
VRRM 1600 V
• General purpose and heavy duty application
Package MTP
Circuit configuration Three phase bridge DESCRIPTION
A range of extremely compact three phase rectifier bridges
offering efficient and reliable operation. The low profile
package has been specifically conceived to maximize space
saving and optimize the electrical layout of the application
specific power supplies.

MAJOR RATINGS AND CHARACTERISTICS

VALUES VALUES VALUES
SYMBOL CHARACTERISTICS UNITS
40MT 70MT 100MT
45 75 100 A
IO
TC 100 80 80 °C
50 Hz 270 380 450
IFSM A
60 Hz 280 398 470
50 Hz 365 724 1013
I2t A2s
60 Hz 325 660 920
I2t 3650 7240 10 130 A2s
VRRM 1600 V
TStg -40 to 125
Range °C
TJ -40 to 150

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
VOLTAGE CODE VRSM, MAXIMUM IRRM MAXIMUM AT
REPETITIVE PEAK
TYPE NUMBER REVERSE VOLTAGE NON-REPETITIVE PEAK TJ = 150 °C
REVERSE VOLTAGE
V V mA
V
VS-40MT160P, VS-70MT160P,
160 1600 1700 5
VS-100MT160P

Revision: 14-Sep-17 1 Document Number: 94538

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors

FORWARD CONDUCTION
VALUES VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
40MT 70MT 100MT
Maximum DC output 45 75 100 A
current at case IO 120° rect. to conduction angle
temperature 100 80 80 °C
t = 10 ms No voltage 270 380 450
Maximum peak, one cycle t = 8.3 ms reapplied 280 398 470
forward, non-repetitive on IFSM 
state surge current t = 10 ms 100 % VRRM 225 320 380
t = 8.3 ms reapplied
Initial  240 335 400
t = 10 ms TJ = TJ maximum 365 724 1013
No voltage
t = 8.3 ms reapplied 325 660 920
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 253 512 600
t = 8.3 ms reapplied 240 467 665
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3650 7240 10 130 A2s
Value of threshold voltage VF(TO) 0.78 0.82 0.75 V
TJ maximum
Slope resistance rt 14.8 9.5 8.1 m
Maximum forward voltage TJ = 25 °C; tp = 400 μs single junction 
VFM 1.45 1.45 1.51 V
drop (40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A)

INSULATION TABLE
VALUES VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
40MT 70MT 100MT
RMS insulation voltage VINS TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s 3500 V

THERMAL AND MECHANICAL SPECIFICATIONS

SYMBO VALUES VALUES VALUES
PARAMETER TEST CONDITIONS UNITS
L 40MT 70MT 100MT
Maximum junction operating
TJ - 40 to 150
temperature range
°C
Maximum storage
TStg - 40 to 125
temperature range
DC operation per module 0.27 0.23 0.19
Maximum thermal resistance, DC operation per junction 1.6 1.38 1.14
RthJC
junction to case 120° rect. conduction angle per module 0.38 0.29 0.22
120° rect. conduction angle per junction 2.25 1.76 1.29 K/W
Mounting surface smooth, flat and greased
Maximum thermal resistance, case to
RthCS Heatsink compound thermal conductivity 0.1
heatsink per module
= 0.42 W/mK
Mounting torque to heatsink A mounting compound is recommended
4 Nm
± 10 % and the torque should be rechecked after a
period of 3 h to allow for the spread of the
Approximate weight compound. Lubricated threads 65 g

CLEARANCE AND CREEPAGE DISTANCES

PARAMETER TEST CONDITIONS MT...PA MT...PB UNITS
External shortest distances in air between terminals 
Clearance
which are not internally short circuited together
10.9 12.3 mm
Shortest distance along external surface of the insulating material 
Creepage distance
between terminals which are not internally short circuited together

Revision: 14-Sep-17 2 Document Number: 94538

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)

160 250

Peak Half Sine Wave On-state Current (A)

40MT...P At Any Rated Load Condition And With
R thJC (DC) = 0.27 K/W Rated Vrrm Applied Following Surge.
150 Initial Tj = 150˚C
Per Module
140 200 @ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
130

120 150
120˚
110
(Rect)
100 100
40MT...P
90 Per Junction
80 50
0 10 20 30 40 50 1 10 100
Total Output Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 1 - Current Rating Characteristics Fig. 3 - Maximum Non-Repetitive Surge Current

1000 300

Peak Half Sine Wave On-state Current (A)

Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Instantaneous On-state Current (A)

Of Conduction May Not Be Maintained.

Tj = 25˚C 250 Initial T j = 150˚C
No Voltage Reapplied
100 Tj = 150˚C Rated V rrm Reapplied
200

150
10
100
40MT...P
40MT...P Per Junction
1 50
0 1 2 3 4 5 6 0.01 0.1 1
Instantaneous On-state Voltage (V) Pulse Train Duration(s)

Fig. 2 - On-State Voltage Drop Chracteristics Fig. 4 - Maximum Non-Repetitive Surge Current

250
40MT...P
Maximum Total Power Loss (W)

Rt
0.

hS

200
2

Tj = 150˚C
A

0.
K/

3
=
W

K
0.

0.5 /W
1
K/

K/
W

120˚ W
-D

150 0.4
elt

(Rect) K/
a

W
R

1K
100 /W

50

0
0 10 20 30 40 50 0
60 30 60 90 120 150
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)

Revision: 14-Sep-17 3 Document Number: 94538

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors

160 350

Peak Half Sine Wave On-state Current (A)

Maximum Allowable Case Temperature (°C)

At Any Rated Load Condition And With

150 70MT...P Rated Vrrm Applied Following Surge.
R thJC (DC) = 0.23 K/W Initial Tj = 150˚C
140 Per Module 300 @ 60 Hz 0.0083 s
130 @ 50 Hz 0.0100 s

120 250
110
100 120˚ 200
(Rect)
90
80 150 70MT...P
70 Per Junction
60 100
0 10 20 30 40 50 60 70 80 1 10 100
Total Output Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 6 - Current Rating Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current

1000 400

Peak Half Sine Wave On-state Current (A)

Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Instantaneous On-state Current (A)

Tj = 25˚C 350 Of Conduction May Not Be Maintained.

Initial T j = 150˚C
Tj = 150˚C 300 No Voltage Reapplied
100 Rated V rrm Reapplied
250

200
10
150

100 70MT...P
70MT...P Per Junction
1 50
0 1 2 3 4 5 0.01 0.1 1
Instantaneous On-state Voltage (V) Pulse Train Duration(s)

Fig. 7 - On-State Voltage Drop Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current

300
70MT...P
Rt
hS
Maximum Total Power Loss (W)

0.
250
A

Tj = 150˚C 2
K/
=

W
0.
1

0.3
K/

K/
W

200 0.4 W
-D

K/W
elt
a

0.5
R

120˚ K/W
150 (Rect)
1K
/W
100

50

0
0 20 40 60 0
80 30 60 90 120 150
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)

Revision: 14-Sep-17 4 Document Number: 94538

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors

140 400

Peak Half Sine Wave On-state Current (A)

Maximum Allowable Case Temperature (°C)

100MT...P At Any Rated Load Condition And With

R thJC (DC) = 0.19 K/W Rated Vrrm Applied Following Surge.
350 Initial Tj = 125˚C
120 Per Module @ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
300
100
250
80 120˚
(Rect) 200

60
150 100MT...P
Per Junction
40 100
40 50 60 70 80 90 100 110 120 130 1 10 100
Total Output Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 11 - Current Rating Characteristics Fig. 13 - Maximum Non-Repetitive Surge Current

1000 500

Peak Half Sine Wave On-state Current (A)

Maximum Non Repetitive Surge Current
100MT...P
Instantaneous On-state Current (A)

450 Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.
400 Initial T j = 125˚C
350 No Voltage Reapplied
100 Rated V rrm Reapplied
300
250
200
10
Tj = 150˚C 150
100 100MT...P
Tj = 25˚C 50 Per Junction
1 0
0.5 1 1.5 2 2.5 3 3.5 4 0.01 0.1 1 10
Instantaneous On-state Voltage (V) Pulse Train Duration(s)

Fig. 12 - On-State Voltage Drop Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current

500
100MT...P Rt
hS
Maximum Total Power Loss (W)

0.0 A =
Tj = 150˚C 5K 0
400 .0
0.1 /W 25
K/ K/
W W
-D
0.2 elt
300 K/W a
R
0.3
K/W
120˚
200 (Rect) 0.5
K/W

1 K/W
100

0
0 20 40 60 80 0
100 30 60 90 120 150
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)

Revision: 14-Sep-17 5 Document Number: 94538

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors

10

Transient Thermal Impedance Z thJC (K/W)

Steady State Value
RthJC per junction =
1.6 K/W (40MT...P)
1.38 K/W (70MT...P
1
1.14 K/W (100MT...P)
40MT...P
DC Operation) 70MT...P
100MT...P

0.1

0.01
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 16 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VS- 10 0 MT 160 P B PbF

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

4 = 45 A
2 - Current rating code 7 = 75 A
10 = 100 A

3 - Circuit configuration code: 0 = three phase rectifier bridge

4 - Essential part number
5 - Voltage code x 10 = VRRM (see Voltage Ratings table)

A = flat pins
6 - Pinout code B = round pins
7 - Lead (Pb)-free

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95244

Revision: 14-Sep-17 6 Document Number: 94538

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

MTP Flat and Round Pin

DIMENSIONS FOR MTP WITH FLAT PIN in millimeters

7 14 Electrical
2
circuit

3, 4

42 ± 0.1
4

5
2.5 6
7

12

1, 2

44.5
7
7
7
7 7.4
22
Ø 5.2 (x 2)
0.5 0.5
32.5 ± 0.5

4 3 2 1 5.5 5.5
27.5
22

5 6 7

14 14 Ø5
10.5

39.5 16
12 ± 0.5

1.3 48.7

63.5 ± 0.25

Document Number: 95244 For technical questions, contact: [email protected] www.vishay.com

Revision: 07-Nov-07 1
Outline Dimensions
Vishay Semiconductors MTP Flat and Round Pin

DIMENSIONS FOR MTP WITH ROUND PIN in millimeters

Ø5 14
Electrical
7 7
circuit
4
3, 4

20.5 ± 0.1
2.5

12
5
6
7

1, 2

44.5
7
7
7 7 Ø 1.1

Ø5
Ø 5.2 (x 2)

12 ± 0.5
4 3 2 1 4
32.5 ± 0.1

10.5
27.5
22

5 6 7 16

14 14 7.4
31.8

1.3 39.5

48.7

63.5 ± 0.25

www.vishay.com For technical questions, contact: [email protected] Document Number: 95244

2 Revision: 07-Nov-07
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Vishay:
VS-70MT160PBPBF VS-100MT160PBPBF VS-40MT160PAPBF VS-40MT160PBPBF VS-70MT160PAPBF VS-
100MT160PAPBF