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Power Device Evolution and The Advent of Igbt 2005

The Insulated Gate Bipolar Transistor.

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73 views33 pages

Power Device Evolution and The Advent of Igbt 2005

The Insulated Gate Bipolar Transistor.

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Edson
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POWER DEVICE EVOLUTION AND THE ADVENT OF IGBT 1.1 INTRODUCTORY BACKGROUND Power semiconductor devices are the essential components determining the efficiency, size, and cost of electronic systems for energy conditioning. The proliferating demand of controllable power electronic systems has promoted research on novel device materials, structures, and circuit topologies [1-7]. Present-day power devices are invariably fabricated using silicon as the base material. Among the upcoming semiconductor materials, silicon carbide has attracted the most attention [8-10]. The higher breakdown field of SiC (2.2 x 10° V/cm for 4H-SiC, 2.5 x 105 V/cm for Si) enables it to offer a projected 200-fold reduction in specific ON resistance as compared to Si devices. SiC devices also promise superior high-temperature performance due to the large energy gap (4H-SiC: 3.26 eV; 1.12 eV), high thermal conductivity (4H-SiC: 4.9 W/cm; Si: 1.5 W/cm), high chemical inertness, high pressure, and radiation resistance of this material. Power device and process design engincers worldwide are relentlessly searching for the perfect semiconductor switch defined by the following characteristic features: (i) Very low driving losses: The switch has high input impedance so that the drive current is infinitesimally small. Furthermore, the drive circuit is simple and inexpensive. (ii) Insignificant ON state or forward conduction losses: The forward voltage drop at the operating current is zero. Additionally, the operational current density is large, making the chip small in size and cost-effective for a given current-carrying capability. (iii) Minimal The Insulated Gate Bipolar Transistor (IGBT) Theory and Design, By Vinod Kumar Khanna. ISBN 0-471-23845-7 © 2003 Institute of Electrical and Electronics Engineers 2 POWER DEVICE EVOLUTION AND THE ADVENT OF IGBT OFF state or reverse blocking losses: Infinitely large reverse blocking voltage together with zero leakage current, even when exposed to elevated tempera- tures. (iv) Extremely low switching losses: Both the turn-on and turn-off times approach zero. In direct current (time period = =) and low-frequency (large but finite time period) applications, these losses are very small because the switching times are much less than the respective periodic times. Advancements in power devices have revolutionized power electronics, and today’s market offers a wide spectrum of devices intended for different applications. In applications where gate turn-off capability is not necessary, thyristors or silicon-controlled rectifiers (SCRs), the highest power density devices, have been the workhorse of power electronics [5-6], carrying high forward currents of ~ 3500 A with a forward drop <2 V and withstanding > 6000 V in the reverse direction. Thyristors have long been the solo devices catering to the megawatt power range, available in ratings like 12 kV/1.5 kA, 7.5 kV/1.65 kA, 6.5 kV/2.65 kA, and so on. They are classified as: phase- control thyristors used for a 50/60-Hz AC mains line and the inverter thyristors for higher frequencies of ~ 400 Hz. Typical turn-on and turn-off times are 1 and 200 ysec. Thyristors are widely used in high-voltage DC (HVDC) conversion, static var compensators, solid-state circuit breakers, large power supplies for electrochemical plants, industrial heating, lighting and welding control, DC motor drives, and so on. As turn-off is accomplished by collector—emitter voltage reversal in con- ventional thyristors, in applications where the load current is both turned on and turned off by the input signal, power bipolar junction transistors (BTs) have been extensively used. Modular double or triple Darlington transistors (1200 V, 800 A) are used in converters with switching frequencies up to several kilohertz. Although bipolar transistors have turn-off time <1 psec, they need very high base current drive both in the ON state and during turn-off. A competing device is the gate turn-off thyristor (GTO). It has forward current capability much higher than the BJT but requires excessively high gate drive current (750 A for 4000 V, 3000 A GTO). Its switching frequency is limited to 1-2 kHz with ¢,, = 4 ysec and t,, = 10 sec. GTOs are used in DC and AC motor drives, uninterruptible power supply (UPS) systems, static var compen- sators, and photovoltaic and fuel cell converters from a few kilowatts to several megawatts of power. Improvements in the GTO structure, the gate drive, the packaging, and the inverse diode led to a new switching compo- nent, the integrated gate commutated thyristor (IGCT), a hard-switched GTO, which may be viewed as the hybridization of a modified GTO structure with very low inductive gate drive. Also, 4.5-kV and 5.5-kV IGCTs with currents up to 4 kA, as well as 6-kV /6-kA IGCTs [11-12], are commercially available, with further possibility of extension up to 10 kV, depending on market demand. Another device accepted for gate turn-off applications is the vertical double-diffused MOSFET (VDMOSFET) [13]. Its gate drive current is very INTRODUCTORY BACKGROUND 3 low, and 500-V/50-A VDMOSFET devices have switching frequencies of ~ 100 kHz with turn-on and turn-off times below 100 nsec. Fast switching speed, ease of drive, wide safe operating area (SOA), and capability to withstand high rates of rise of ON-state voltage (dV/dt) have made VD- MOSFETs the logical choice in power circuit designs. However, VDMOS- FETs operate by unipolar conduction. So, their ON resistance drastically increases with drain-source voltage capability, restricting their exploitation to voltages less than a few hundred volts. Moreover, as the voltage rating increases, the inherent reverse diode shows increasing reverse recovery Gate EN* Substrate! Drain (b) Figure 1.1 Structure of (a) conventional MOSFET and (b) Cool MOSFET.

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