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Analysis and Design of MOSFET based Amplifier in Different Configurations

Conference Paper · April 2013

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 Analysis and Design of MOSFET based
Amplifer in Different Configurations
Paritosh Vyas, Tarun Singh Yadav Sunil Kumar
Department of Electronics and Communication Department of Electronics and Communication
Jaypee Institute of Information Technology Mewar University, Chittorgarh,
Noida, India Rajasthan, India
[email protected] [email protected]
[email protected]

Abstract— This paper presents the design of amplifier in usually in uF range, is required to provide very small
three different configurations. i.e. Common Source, Common impedance at signal frequencies of interest. In this way, the
Drain, Common Gate. It also presents their input output signal current passes through CS to ground and thus bypasses
characteristics, time domain analysis and frequency response the resistance RS, Hence CS is called bypass capacitor. A
of the amplifier. The voltage gain of a particular amplifier is
common source amplifier realized using the circuit of Fig. 1.
designed by choosing appropriate value of VGS in saturation
region in the input output voltage characteristics. After In order not to disturb dc bias current and voltages, the
choosing that value we applied an input sinusoidal signal and signal to be amplified, shown as voltage source Vsig with an
check the output waveform and compare it with the theoretical internal resistance Rsig, is connected to the gate through a
results. large capacitor CC1. Similarly, the drain is also connected to
load resistance RL via a large capacitor CC2. These two
Index Terms— CMOS Analog Integrated Circuits, T-Spice, capacitances are called coupling capacitors. Note that RL can
Voltage Swing, Overdrive. either be a load resistor, to which the amplifier is required to
I. INTRODUCTION provide its output voltage signal, or it can be the input
impedance of another amplifying stage. The resistances RG1
Amplification is an essential function in most analog (and and RG2 are used to provide a suitable dc bias to the transistor
many digital) circuits. We amplify an analog or digital signal to make it operate in saturation region.
because it may be too small to drive a load, overcome the In this paper we will use TSpice tool to compute the
noise of a subsequent stage, or provide logical levels to a voltage gain and frequency response of the CS amplifier.
digital circuit. Amplification also plays a critical role in Here we connected source and body of the MOSFET
feedback systems. In this paper, we study the low-frequency together to cancel the body effect. Also, we used the 2-um
behavior of single-stage CMOS amplifiers. Analyzing both CMOS technology and Spice level-1 parameters.
large signal and small signal characteristics of each circuit, The expressions for voltage gain(AV) and Input
we develop intuitive techniques and models that prove useful Impedance Rin of CS amplifier is given by
in understanding more complex systems. An important part
of designer’s job is to use proper approximations so as to (1)
create a simple metal picture of a complicated circuit. We
describe in this paper three types of amplifier configurations: (2)
Common Source, Common Gate, and Common Drain.
Firstly, we will draw voltage transfer characteristics
II. COMMON SOURCE AMPLIFIER
(VTC) of the amplifier. We will observe the change output
voltage with respect to the change in input voltage. This will
gives us the insight of choosing appropriate value of VGS
(operating point) so that our transistor works in saturation
region and gives us maximum voltage swing.

Figure 1: Schematic of CS Amplifier.

The Common-source(CS) configuration is the most

widely used of all MOSFET amplifier circuits. Observe that
to establish a signal ground we have connected a large
capacitor, CS, between the source and ground. This capacitor, Figure 2: Voltage Transfer Characteristics (VTC)A of CS
Amplifier.
 Now, we will choose VGS as such that our transistor
works in saturation region. Here saturation region of the √ (10)
transistor lies between 1V to 1.4V. So, we choose VGS= 1.3V
to ensure that our transistor works in saturation region and By using equation (1) we will find the value of RD, as AV=10
acts as an amplifier. is given
We applied an input signal of 1mV and frequency 1 KHz.
Our target is to amplify this signal 10 times; i.e Amplifier
(11)
Gain should be 10. We assume that power supply VDD=3.5V
and maximum power consumption P=1.5mW. We will also
assume a signal source resistance Rsig=10kΩ, a load Using all the values given, RD calculated as
resistance of RL=50kΩ and bypass and coupling capacitors of
10 uF. With a 3.5V power supply, drain current of MOSFET (12)
is limited to
Output voltage VO is given by
(3)
(13)

The equation of ID in saturation is given by Source Resistance RS can be written as

(4)
(14)

(Spice Level-1 Parameter)

For finding Gate voltage VG we apply KVL at the input loop
Overdrive, Vov = 0.3V (Typical Value) which gives

λ= 0.02 (Spice Level-1 Parameter) (15)

We use hit and trail method for finding RG1 and RG2 so it can
(For maximum Voltage Swing) satisfies this equation

(16)

By solving equation (4) for This gives,

(17)
(5)
(18)
After putting all the values in eq. (5) we get
With the help of above results we design CS amplifier on
TSpice tool. After doing its transient analysis we get the
(6) output signal waveform with respect to input signal. Also the
input signal is amplified 10 times as shown in Fig 3.
Here, L=2 µm as per 2-µm CMOS technology node.

(7)

Therefore,

(8)

Now, we will find drain to source resistance rds, which is

given by

(9)

The transconductance gm of the amplifier is given by Figure 3: Output Voltage with respect to Input VoltageB
We have applied the input signal of 2mV P-P and get the (26)
output voltage of 20.23mV. i. e
(27)
(19)

(20) AV1 → Gain without bypass capacitor CS.

Therefore, Voltage Gain AV is

(21)

We get our practical gain of 10.11 as our theoretical gain is

10. Therefore, % error is given by

(22)

(23)

Next, to measure the mid-band gain AM and the 3-dB Figure 5: Frequency response of CS amplifier without
frequencies fL and fH, we apply a 1-V ac voltage at the input, Bypass capacitorD.
perform an ac analysis simulation, and plot the output
voltage magnitude versus frequency as shown in Fig. 4. The mid-band gain in this case is AM = 2.09 and the 3-dB
frequencies are fL = 0.29Hz and fH = 415.86MHz. Therefore,
bandwidth (BW) is

(28)

So, we can see clearly that the bandwidth is increased by

three fold and gain is reduced by a factor of 4.8. Therefore,
the source degeneration resistor RS provides negative
feedback, which allows us to trade off gain for wider
bandwidth.

III. COMMON DRAIN AMPLIFIER

Figure 4: Frequency response of CS amplifier with Bypass

capacitorC.

This corresponds to the magnitude response of CS amplifier

because we chose a 1-V input signal. Accordingly, the mid-
band gain AM = 10.11 and the 3-dB frequencies are
fL=50.92Hz and fH=119.68MHz. Therefore, bandwidth (BW)
is

(24)

The effect of bypass capacitor CS is seen clearly from the

graph. Because gain is flattens at very low frequency, i.e
10Hz. This flattening of gain is due to capacitor CS and
resistor RS. Now, we will see the effect of unbypassed Figure 6: Schematic of CD Amplifier.
resistor RS, i.e CS=0. This will reduce the gain of the
amplifier by a factor of 1+gmRS and increase the bandwidth A common drain amplifier, also known as a source
(BW) of the amplifier. The effective reduction of gain and follower, is one of three basic single-stage field effect
increment of bandwidth (BW) is shown in Fig. 5. transistor (FET) amplifier topologies, typically used as a
voltage buffer. In this circuit the gate terminal of the
transistor serves as the input, the source is the output, and the
(25) drain is common to both (input and output), hence its name.
In addition, this circuit is used to transform impedances. For to ensure that our transistor works in saturation region and
example, the Thevenin resistance of a combination of a acts as an amplifier.
voltage follower driven by a voltage source with high We applied an input signal of 1mV and frequency 1 KHz.
Thevenin resistance is reduced to only the output resistance This is a CD amplifier or Source follower, i.e Amplifier Gain
of the voltage follower, a small resistance. That resistance should be approximately 1. We assume that power supply
reduction makes the combination a more ideal voltage VDD=3.5V and maximum power consumption P=1.5mW.
source. Conversely, a voltage follower inserted between a We will also assume a signal source resistance Rsig=10kΩ, a
driving stage and a high load (i.e. a low resistance) presents load resistance of RL=50kΩ and bypass and coupling
an infinite resistance (low load) to the driving stage, an capacitors of 10 uF. With a 3.5V power supply, drain current
advantage in coupling a voltage signal to a large load. A of MOSFET is limited to
common drain amplifier realized using the circuit of Fig. 6.
In order not to disturb dc bias current and voltages, the (31)
signal to be amplified, shown as voltage source Vsig with an
internal resistance Rsig, is connected to the gate through a
large capacitor C1. Similarly, the source is also connected to The equation of ID in saturation is given by
load resistance RL via a large capacitor C2. These two
capacitances are called coupling capacitors. Note that RL can (32)
either be a load resistor, to which the amplifier is required to
provide its output voltage signal, or it can be the input
impedance of another amplifying stage. The resistances R1 (Spice Level-1 Parameter)
and R2 are used to provide a suitable dc bias to the transistor
to make it operate in saturation region. Overdrive, Vov = 0.3V (Typical Value)
In this paper we will use TSpice tool to compute the
voltage gain and frequency response of the CS amplifier. λ= 0.02 (Spice Level-1 Parameter)
Here we connected source and body of the MOSFET
together to cancel the body effect. Also, we used the 2-um (For maximum Voltage Swing)
CMOS technology and Spice level-1 parameters.
The expressions for voltage gain(AV) and Input
Impedance Rin of CD amplifier is given by

(29) By solving equation (4) for

(30) (33)

Firstly, we will draw voltage transfer characteristics

(VTC) of the amplifier. We will observe the change output After putting all the values in eq. (5) we get
voltage with respect to the change in input voltage. This will
gives us the insight of choosing appropriate value of VGS (34)
(operating point) so that our transistor works in saturation
region and gives us maximum voltage swing.
Here, L=2 µm as per 2-µm CMOS technology node.

(35)

Therefore,

(36)

Now, we will find drain to source resistance rds, which is

given by

(37)
E
Figure 7: Voltage Transfer Characteristics (VTC) of CD
Amplifier. The transconductance gm of the amplifier is given by

Now, we will choose VGS as such that our transistor

works in saturation region. Here saturation region of the √ (38)
transistor lies between 1V to 2.9V. So, we choose VGS= 1.5V
By using equation (29) we will find the value of RS, as AV=1
 (48)
(39)

(49)
Using all the values given, RS calculated as

(40) Next, to measure the mid-band gain AM and the 3-dB

frequencies fL and fH, we apply a 1-V ac voltage at the input,
perform an ac analysis simulation, and plot the output
For finding Gate voltage VG we apply KVL at the input loop
voltage magnitude versus frequency as shown in Fig. 9.
which gives

(41)

We use hit and trail method for finding RG1 and RG2 so it can
satisfies this equation

(42)

This gives,

(43)
Figure 9: Frequency response of CD amplifierG.
(44)
This corresponds to the magnitude response of CD amplifier
With the help of above results we design CD amplifier on because we chose a 1-V input signal. Accordingly, the mid-
TSpice tool. After doing its transient analysis we get the band gain AM = 0.78 and the 3-dB frequencies are fL= 0.32Hz
output signal waveform with respect to input signal as shown and fH=1.27GHz. Therefore, bandwidth (BW) is
in Fig 8.
(50)

IV. COMMON GATE AMPLIFIER

Figure 8: Output Voltage with respect to Input VoltageF

We have applied the input signal of 2mV P-P and get the
output voltage of 1.57mV. i. e

(45)

(46)

Therefore, Voltage Gain AV is

(47)

We get our practical gain of 0.785 as our theoretical gain is 1. Figure 10: Schematic of CG Amplifier.
Therefore, % error is given by
A Common-Gate Amplifier typically used as a current
buffer or voltage amplifier. In this circuit the source terminal
of the transistor serves as the input, the drain is the output
and the gate is common to both, hence its name. It is useful (52)
in, for example, CMOS RF receivers, especially when
operating near the frequency limitations of the FETs, and it is
desirable because of the ease of impedance matching and The equation of ID in saturation is given by
potentially has lower noise. A common gate amplifier
realized using the circuit of Fig. 10. (53)
In order not to disturb dc bias current and voltages, the
signal to be amplified, shown as voltage source Vin is
connected to the source through a large capacitor C3. (Spice Level-1 Parameter)
Similarly, the drain is also connected to load resistance RL
via a large capacitor C2. These two capacitances are called Overdrive, Vov = 0.3V (Typical Value)
coupling capacitors. Note that RL can either be a load
resistor, to which the amplifier is required to provide its λ= 0.02 (Spice Level-1 Parameter)
output voltage signal, or it can be the input impedance of
another amplifying stage. The resistances R1 and R2 are used (For maximum Voltage Swing)
to provide a suitable dc bias to the transistor to make it
operate in saturation region.
In this paper we will use TSpice tool to compute the
voltage gain and frequency response of the CS amplifier.
Here we connected source and body of the MOSFET By solving equation (4) for
together to cancel the body effect. Also, we used the 2-um
CMOS technology and Spice level-1 parameters.
The expressions for voltage gain(AV) and Input (54)
Impedance Rin of CG amplifier is given by

(51) After putting all the values in eq. (5) we get

(55)
Firstly, we will draw voltage transfer characteristics
(VTC) of the amplifier. We will observe the change output
voltage with respect to the change in input voltage. This will Here, L=2 µm as per 2-µm CMOS technology node.
gives us the insight of choosing appropriate value of VGS
(operating point) so that our transistor works in saturation Therefore,
region and gives us maximum voltage swing.
(56)

Now, we will find drain to source resistance rds, which is

given by

(57)

The transconductance gm of the amplifier is given by

√ (58)
Figure 11: Voltage Transfer Characteristics (VTC)H of CG
Amplifier.
By using equation (51) we will find the value of RD, as
Now, we will choose VGS as such that our transistor AV=10
works in saturation region. Here saturation region of the
transistor lies between 0.5V to 0.8V. So, we choose Vin= (59)
0.6V to ensure that our transistor works in saturation region
and acts as an amplifier.
We applied an input signal of 1mV and frequency 1 KHz. Using all the values given, RD calculated as
Our target is to amplify this signal 10 times, i.e Amplifier
Gain should be 10. We assume that power supply VDD=5V (60)
and maximum power consumption P=1.5mW. We will also
assume a load resistance of RL=50kΩ and bypass and Output voltage VO is given by
coupling capacitors of 10 uF. With a 3.5V power supply,
drain current of MOSFET is limited to (61)
 Next, to measure the mid-band gain AM and the 3-dB
Source Resistance RS can be written as frequencies fL and fH, we apply a 1-V ac voltage at the input,
perform an ac analysis simulation, and plot the output
voltage magnitude versus frequency as shown in Fig. 13.
(62)

For finding Gate voltage VG we apply KVL at the input loop

which gives

(63)

We use hit and trail method for finding RG1 and RG2 so it can
satisfies this equation

(64)
Figure 13: Frequency response of CG amplifierJ.
This gives, This corresponds to the magnitude response of CG amplifier
because we chose a 1-V input signal. Accordingly, the mid-
(65) band gain AM = 8.8 and the 3-dB frequencies are fL= 31.84Hz
and fH=946.41MHz. Therefore, bandwidth (BW) is
(66)
(72)
With the help of above results we design CG amplifier on
TSpice tool. After doing its transient analysis we get the
output signal waveform with respect to input signal as shown V. CONCLUSION
in Fig 12. In this paper, we accomplished the goal of learning and
designing of the different types of amplifiers. i.e common
source, common drain, common gate using T-Spice tool. We
have seen their frequency response to check in which
frequency range our amplifier gives the optimal gain. We
also seen the effect of different biasing and feedback resistors
on gain and drawn their plots.
REFERENCES

Behzad Razavi, “Design of Analog CMOS Integrated Circuits”,

Tata McGraw Hill Publication.
Figure 12: Output Voltage with respect to Input VoltageI Adel S. Sedra, Kenneth C. Smith, “Microelectronic Circuits”,
Oxford University Press.
We have applied the input signal of 2mV P-P and get the Yannis Tsividis, “Operation and Modeling of the MOS Transistor”,
Oxford University Press.
output voltage of 17.60 mV. i. e
Paul R. Gray, Paul J. Hurst, Stephen H. Lewis, Robert G. Meyer,
“Analysis and Design of Analog Integrated Circuits”, John Wiley
(67) Sons, Inc.
Narain Arora, “MOSFET Modeling for VLSI Design", World
(68) Scientific.

Therefore, Voltage Gain AV is

(69)

We get our practical gain of 8.8 as our theoretical gain is 10.

Therefore, % error is given by

(70)

(71)

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