PROBLEM 1

Based from the Al-Cu phase diagram in

Figure 1, the 𝑇𝑚 (𝐴𝑙) = 660℃, 𝑇𝐸 = 548℃,
𝑋𝑚𝑎𝑥 = 5.65 𝑤𝑡% 𝐶𝑢, and 𝑋𝐸 =
33 𝑤𝑡% 𝐶𝑢. The diffusion coefficient for the
liquid 𝐷𝐿 = 3𝑥10−9 𝑚2 𝑠 −1. If an Al-0.5 wt%
Cu is solidified with no convection and a
planar solid/liquid interface at 5 𝜇𝑚 𝑠 −1:

1. What is the interface temperature in

the steady state?
2. What is the thickness of the diffusion
layer?
3. What temperature gradient will be
required to maintain a planar
interface? (Hint: Refer to Figure 2.)

Figure 2

660℃
653℃

Figure 1
The temperature at the steady state is given by the solidus temperature for the given composition.
Based from Figure 1,

𝑇𝑖𝑛𝑡𝑒𝑟𝑓𝑎𝑐𝑒−𝑠𝑡𝑒𝑎𝑑𝑦 𝑠𝑡𝑎𝑡𝑒 = 653℃

The thickness of the diffusion layer is equivalent to the characteristic width of the concentration profile,

𝐷𝐿 3 𝑥 10−9 𝑚2 𝑠 −1
𝑡ℎ𝑖𝑐𝑘𝑛𝑒𝑠𝑠 = = = 6 𝑥 10−4 𝑚
𝑣 5 𝑥 10−6 𝑚 𝑠 −1

A planar interface is only stable if there is no zone of constitutional undercooling ahead of it. Under
steady-state growth, consideration of the temperature and concentration profiles in the liquid ahead
of the interface as seen in Figure 2 gives that the critical gradient, 𝑇′𝐿

𝑇1 − 𝑇3 660℃ − 653℃
𝑇′𝐿 = = = 11.67 ℃ 𝑚𝑚−1 = 11.67 𝐾 𝑚𝑚−1
𝐷 6 𝑥 10−1 𝑚𝑚
𝑣

Where T1 and T3 are the liquidus temperature and solidus temperature respectively for the given alloy
composition
PROBLEM 2
A laboratory experiment was designed based on the Kirkendall Experiment Set-up in order to
determine the diffusion data of Zn in Cu, i.e. the pre-exponential diffusion coefficient (in 𝑚2 /𝑠), and
the activation energy (in 𝐽/𝑚𝑜𝑙). Two experimental set-ups were prepared with varying conditions as
shown in the table below.
Table 1. Experimental Set-up
Set-Up Temperature (℃) Duration (days)
A 950 30
B 875 60

The initial composition of the brass-Cu couple for each set-up was the same. The brass was an alloy of
90Cu-10Zn while Cu was an approximately pure metal (≈ 100%).

Compositional analysis of the diffusion couple after heat treatment was done. For set-up A, it was
determined that the concentration of Zn at the 957 𝜇𝑚 position into the pure copper side of the
diffusion couple was 2.5%. On the other hand, for set-up B, it was observed that at the 737 𝜇𝑚 position
into the pure copper side of the diffusion couple, the concentration of Zn was 2.5%.

Using the results from the experiment, determine the diffusion data of Zn in Cu, i.e. the pre-
exponential diffusion coefficient (in 𝑚2 /𝑠), and the activation energy (in 𝐽/𝑚𝑜𝑙).

Table 2. Table of error function values

 90Cu - 10Zn ≈100 Cu

Set-Up
Data
A B

Temperature (𝐾) 1223 1148

Time (𝑠) 2592000 5184000

Distance, 𝑥 (𝑚) 957 𝑥 10−6 737 𝑥 10−6
Concentration at 𝑥, (𝑤𝑡%) 5 5

Considering Set-Up A to solve for 𝐷1223 ,

𝐶1 + 𝐶2 𝐶1 − 𝐶2 𝑥
𝐶= ( )−( ) 𝑒𝑟𝑓 ( )
2 2 2√𝐷𝑡

10 + 0 10 − 0 𝑥
2.5 = ( )−( ) 𝑒𝑟𝑓 ( )
2 2 2√𝐷𝑡

957 𝑥 10−6 𝑚
𝑒𝑟𝑓 ( ) = 0.5
2√𝐷1223 (2592000 𝑠)

Interpolating z

z erf(z)
0.45 0.4755
z 0.5
0.50 0.5205

0.45 − 𝑧 0.4755 − 0.5

=
0.45 − 0.50 0.4755 − 0.5205
Thus

957 𝑥 10−6 𝑚
= 0.4772
2√𝐷1223 (2592000 𝑠)

𝐷1223 = 3.962 𝑥 10−13 𝑚2 𝑠 −1

Considering Set-Up B to solve for 𝐷1148 ,

𝐶1 + 𝐶2 𝐶1 − 𝐶2 𝑥
𝐶= ( )−( ) 𝑒𝑟𝑓 ( )
2 2 2√𝐷𝑡

10 + 0 10 − 0 𝑥
2.5 = ( )−( ) 𝑒𝑟𝑓 ( )
2 2 2√𝐷𝑡

737 𝑥 10−6 𝑚
𝑒𝑟𝑓 ( ) = 0.5
2√𝐷1148 (5184000 𝑠)

𝑒𝑟𝑓(0.4722) = 0.5

Thus

737 𝑥 10−6 𝑚
= 0.4722
2√𝐷1148 (5184000 𝑠)

𝐷1148 = 1.175 𝑥 10−13 𝑚2 𝑠 −1

Use the diffusion parameter obtained from two temperature and recall that

−𝑄𝑑
𝐷𝑇 = 𝐷0 𝑒𝑥𝑝 ( )
𝑅𝑇
 𝑄𝑑
𝑙𝑛(𝐷𝑇 ) = 𝑙𝑛(𝐷0 ) − ( )
𝑅𝑇

𝑄𝑑
𝑙𝑛(3.962 𝑥 10−13 𝑚2 𝑠 −1 ) = 𝑙𝑛(𝐷0 ) − ( )
𝐽
8.314 − 𝐾(1223𝐾)
𝑚𝑜𝑙

𝑄𝑑
𝑙𝑛(1.175 𝑥 10−13 𝑚2 𝑠 −1 ) = 𝑙𝑛(𝐷0 ) − ( )
𝐽
8.314 − 𝐾(1148𝐾)
𝑚𝑜𝑙

Solving for 𝐷0 and 𝑄𝑑

𝑙𝑛(𝐷0 ) = −9.952

𝑫𝟎 = 𝟒. 𝟕𝟔𝟑 𝒙 𝟏𝟎−𝟓 𝒎𝟐 /𝒔

𝑸𝒅 = 𝟏𝟖𝟗𝟏𝟕𝟓. 𝟔𝟒 𝑱/𝒎𝒐𝒍
PROBLEM 3
One integrated circuit design calls for the diffusion of aluminum into silicon wafers; the background
concentration of Al in Si is 1.75 𝑥 1019 𝑎𝑡𝑜𝑚𝑠/𝑚3. The predeposition heat treatment is to be
conducted at 975℃ for 1.25h, with a constant surface concentration of 4 𝑥 1026 𝐴𝑙 𝑎𝑡𝑜𝑚𝑠/𝑚3 . At a
drive-in treatment temperature of 1050℃, determine the diffusion time required for a junction depth
of 1.75𝜇𝑚. For this system, values of 𝑄𝑑 and 𝐷0 are 3.41 𝑒𝑉/𝑎𝑡𝑜𝑚 and 1.38 𝑥 10−4 𝑚2 /𝑠,
respectively.

𝐷𝑝 𝑡𝑝
𝑄0 = 2𝐶𝑠 √
𝜋

𝑚2 −3.41 𝑒𝑉/𝑎𝑡𝑜𝑚
𝐷1278 = (1.38 𝑥 10−4 ) 𝑒𝑥𝑝 ( ) = 4.974 𝑥 10−18 𝑚2 /𝑠
𝑠 𝑒𝑉
8.62 𝑥 10−5 𝑎𝑡𝑜𝑚 ∙ 𝐾 𝑥 1278

26 3 )√
(4.974 𝑥 10−18 𝑚2 /𝑠)(1.25 𝑥 3600𝑠)
(4
𝑄0 = 2 𝑥 10 𝑎𝑡𝑜𝑚𝑠/𝑚 = 6.753 𝑥 1019 𝑎𝑡𝑜𝑚𝑠/𝑚2
𝜋

𝑚2 −3.41 𝑒𝑉/𝑎𝑡𝑜𝑚
𝐷1323 = (1.38 𝑥 10−4 ) 𝑒𝑥𝑝 ( ) = 1.426 𝑥 10−17 𝑚2 /𝑠
𝑠 𝑒𝑉
8.62 𝑥 10−5 𝑎𝑡𝑜𝑚 ∙ 𝐾 𝑥 1323

𝑄0 −𝑥 2
𝑐(𝑥, 𝑡) = 𝑒𝑥𝑝 ( )
√𝜋𝐷𝑡 4𝐷𝑡

19 3
6.753 𝑥 1019 𝑎𝑡𝑜𝑚𝑠/𝑚2 −(1.75 𝑥 10−6 𝑚)2
1.75 𝑥 10 𝑎𝑡𝑜𝑚𝑠/𝑚 = 𝑒𝑥𝑝 ( )
√𝜋(1.426 𝑥 10−17 𝑚2 /𝑠)𝑡 4(1.426 𝑥 10−17 𝑚2 /𝑠)𝑡

1.0089 𝑥 1028 −53690.4

1.75 𝑥 1019 = 𝑒𝑥𝑝 ( )
√𝑡 𝑡

𝑡 = 3331.30 𝑠 = 𝟎. 𝟗𝟐𝟓 𝒉
PROBLEM 4
Consider a BCC single crystal produced for sensitive tensile stress applications. Due to a manufacturing
mistake, the single crystal contains 1 edge dislocation. The edge dislocation has a line direction of
〈12̅1〉 and a burgers vector of 〈111〉. Plot these poles on the stereogram.
Which slip plane will this edge dislocation move (glide) along on? Justify.
What tensile direction/s should you orient your single crystal so that failure due to slipping (gliding)
will not occur? Justify. Draw the locus and/or pole of this/these direction/s.
Note: Use tracing paper.
PROBLEM 5
It is widely recognized that stress-strain curves generated in a UTM tensile test is substantially affected
by the strain rate chosen. Consider two specimens of the same material tested at different strain rates.
Compute for the instantaneous work hardening rates (change of flow stress with time, in 𝑀𝑃𝑎 𝑠 −1) at
the onset of necking for each specimen respectively.
What is the true yield stress of the specimen/s?
Estimate the respective dislocation velocities if the two specimens have the same dislocation density
of 1010 𝑐𝑚/𝑐𝑚3 . Assume a burgers vector of 0.248 nm.

Figure 1

For the true yield stress, determine the engineering yield stress and corresponding strain based from
the graph,

𝜎𝑌,𝐴 = 219 𝑀𝑃𝑎 𝜀𝑌,𝐴 = 1.7%

𝜎𝑌,𝐵 = 171 𝑀𝑃𝑎 𝜀𝑌,𝐵 = 1.52%

Recall that

𝜎𝑇 = 𝜎(1 + 𝜀)

1.7
𝜎𝑌(𝑇),𝐴 = 219 (1 + ) = 𝟐𝟐𝟐. 𝟕𝟐𝟑 𝑴𝑷𝒂
100
 1.52
𝜎𝑌(𝑇),𝐵 = 171 (1 + ) = 𝟏𝟕𝟑. 𝟔 𝑴𝑷𝒂
100

1
𝜀̇ = 𝜌𝑏𝑣̅
2

1 𝑐𝑚
0.1 𝑠 −1 = (1010 ) (0.248 𝑥 10−7 𝑐𝑚)(𝑣̅ )
2 𝑐𝑚3

̅𝒗̅̅𝑨̅ = 𝟖. 𝟎𝟔𝟓 𝒙 𝟏𝟎−𝟒 𝒄𝒎/𝒔

1 𝑐𝑚
0.08 𝑠 −1 = (1010 3
) (0.248 𝑥 10−7 𝑐𝑚)(𝑣̅ )
2 𝑐𝑚

𝒗𝑩 = 𝟔. 𝟒𝟓𝟐 𝒙 𝟏𝟎−𝟒 𝒄𝒎/𝒔

̅̅̅̅