The BAS28 consists of two electrically isolated high speed silicon switching diodes packaged in a surface mount SOT-143 case. Each diode is rated for reverse voltages up to 75V and forward currents up to 250mA continuous or 500mA peak. The device is designed for high speed switching applications and provides electrical isolation and protection against fault currents and voltages.
The BAS28 consists of two electrically isolated high speed silicon switching diodes packaged in a surface mount SOT-143 case. Each diode is rated for reverse voltages up to 75V and forward currents up to 250mA continuous or 500mA peak. The device is designed for high speed switching applications and provides electrical isolation and protection against fault currents and voltages.
The BAS28 consists of two electrically isolated high speed silicon switching diodes packaged in a surface mount SOT-143 case. Each diode is rated for reverse voltages up to 75V and forward currents up to 250mA continuous or 500mA peak. The device is designed for high speed switching applications and provides electrical isolation and protection against fault currents and voltages.
The BAS28 consists of two electrically isolated high speed silicon switching diodes packaged in a surface mount SOT-143 case. Each diode is rated for reverse voltages up to 75V and forward currents up to 250mA continuous or 500mA peak. The device is designed for high speed switching applications and provides electrical isolation and protection against fault currents and voltages.
w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED DESCRIPTION: SWITCHING DIODES The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MARKING CODE: A61 or JTW
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage VR 75 V Peak Repetitive Reverse Voltage VRRM 85 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current IFRM 500 mA Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A Peak Forward Surge Current, tp=1.0ms IFSM 2.0 A Peak Forward Surge Current, tp=1.0s IFSM 1.0 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=25V, TA=150°C 30 μA IR VR=75V 1.0 μA IR VR=75V, TA=150°C 50 μA VF IF=1.0mA 715 mV VF IF=10mA 855 mV VF IF=50mA 1.00 V VF IF=150mA 1.25 V CJ VR=0, f=1.0MHz 2.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 6.0 ns Qs IF=10mA, VR=5.0V, RL=500Ω 45 pC VFR IF=10mA, tr=20ns 1.75 V
R8 (19-September 2018) BAS28
SURFACE MOUNT SILICON
DUAL, ISOLATED HIGH SPEED SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.003 0.008 0.08 0.20 B 0.006 - 0.15 - C 0.000 0.005 0.01 0.13 D 0.035 0.045 0.89 1.14 E 0.110 0.120 2.79 3.04 F 0.075 1.90 G 0.083 0.102 2.10 2.60 H 0.047 0.055 1.19 1.40 LEAD CODE: J 0.012 0.020 0.30 0.50 1) Cathode D1 K 0.030 0.037 0.76 0.93 2) Cathode D2 L 0.067 1.70 3) Anode D2 SOT-143 (REV: R3) 4) Anode D1
MARKING CODE: A61 or JTW
R8 (19-September 2018) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES
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