Tsv-To-Tsv Crosstalk Induced Delay Analysis For 3D Ics: Qifan Hu, Qin Wang, Jing Chen, Jing Xie, Zhigang Mao
Tsv-To-Tsv Crosstalk Induced Delay Analysis For 3D Ics: Qifan Hu, Qin Wang, Jing Chen, Jing Xie, Zhigang Mao
Qifan Hu1, Qin Wang1*, Jing Chen2, Jing Xie1, Zhigang Mao1
1
Department of Microelectronics and Nanoscience, Shanghai Jiao Tong University, Shanghai, PR China
2
Shanghai Aerospace Electronics Technology Institute, Shanghai, PR China
* Email: [email protected]
1. Introduction
In three-dimensional integrated circuit (3D IC), TSV Figure 1.(a) Physical structure of a pair of TSVs and (b)
parasitic capacitance is quite larger than wire capacitance. simplified circuit of a pair of TSVs
So TSV induced interconnect delay cannot be neglected.
By employing SPEF file which consists of TSV parasitic Table 1. TSV parameters
parameters, traditional static timing analysis (STA) tool
is still able to calculate interconnect delay [1]. [2] and [3] parameter value/um parameter value/um
uses Elmore delay model to calculate interconnect delay TSV 3.2 TSV pitch 10.0
which consists TSV delay. [4] predicts interconnect diameter
delay with distribution models. Analytic model is
TSV 10.0 Oxide 0.25
proposed for crosstalk excitation and propagation in
height layer
VLSI circuit [5]. A detailed crosstalk induced delay
Pad size 6.0 Pad height 2.0
analysis of the coupled interconnects considering process
is presented in [6]. [7] considers multiple aligned RDL 2.0 Upper 0.50
aggressors coupled to a delay-sensitive victim path. height oxide
Quantitative analysis of the crosstalk voltage impact layer
on the output signal is performed in [8]. They also Substrate 9.0 Lower 0.50
propose a signal transmission noise reduction method. thickness oxide
TSVs pair and multiple TSV crosstalk modeling method layer
are given in [9] [10].
1
sC Gm Gm U 1 (1)
R 1 R U s
1
Gm sC Gm U 2 0
R