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MOS Transistor Symbol

The document summarizes the MOS transistor symbol and its operation. It shows the basic n-channel and p-channel MOSFET symbols, indicating the gate, source, drain and substrate terminals. It then provides equations for the current in each region of operation - cutoff, linear and saturation. The key points are: 1) The MOSFET is a majority carrier device, with electrons as the majority carriers in n-channel MOSFETs and holes in p-channel MOSFETs. 2) Current equations are provided for each region of operation based on gate voltage, drain voltage, threshold voltage and device parameters like mobility. 3) In saturation, the current becomes independent of the drain

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Nishant Panchal
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143 views11 pages

MOS Transistor Symbol

The document summarizes the MOS transistor symbol and its operation. It shows the basic n-channel and p-channel MOSFET symbols, indicating the gate, source, drain and substrate terminals. It then provides equations for the current in each region of operation - cutoff, linear and saturation. The key points are: 1) The MOSFET is a majority carrier device, with electrons as the majority carriers in n-channel MOSFETs and holes in p-channel MOSFETs. 2) Current equations are provided for each region of operation based on gate voltage, drain voltage, threshold voltage and device parameters like mobility. 3) In saturation, the current becomes independent of the drain

Uploaded by

Nishant Panchal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOS Transistor Symbol

Gate terminal
Metal layer / Poly

Dielectric/ Oxide layer

Inversion layer / Channel


Semiconductor / Substrate / Body

Substrate / Body
VGS (Gate to Isolated MOSFET terminal
Substrate /
Source voltage)
N(Channel)MOSFET

n+ n+

P type Substrate n+ n+

P type Substrate

If Source and
Substrate Channel is
potentials are created by Vgs
same, then
required n+ n+ MOSFET is a
threshold voltage majority carrier-
become less device.
In NMOS, the majority charge
carrier is electrons, which should
move from Source to Drain.
P(Channel)MOSFET

p+
p+
Current Equation (Ids) @ Linear region
dQ Q
I  Where "Q "is QChannel
dt t
Qchannel  C gate V
A WL
C gate     ox
D tox
V Vgc  Vt
Vgc isVoltage betweenGate and Channel
One sideof Channel has lowerPotential(nearSource)
and Another side (near Drain) has higher potential.
So, we haveto find averagevoltageof channel Qchannel
Vgs  Vgd Vgs  Vsd  Vgs Vds
Vgc   Vgs 
2 2 2
Vds
V  Vgs   Vt Qchannel  (  ox
WL
)*(Vgs 
Vds
 Vt )
2 tox 2
Current Equation (Ids) @ Linear region
L
t
v
dis tan ce
Velocity  where " L "is Channel length
time
" v "isVelocity of ch arg e carrier
Vds
v E
L L2
where "  "is mobility of electron t
 Vds
" E "is electric field int ensity
Qchannel
WL Vds
Qchannel  (  ox )*(Vgs   Vt )
tox 2
 ox W Vds
I  ( )*(Vgs   Vt )Vds
tox L 2
Current Equation (Ids)
 ox W Vds
I  ( )*(Vgs   Vt )Vds for SaturationCurrent :
tox L 2 Subtitute V  V  V
ds gs t
W Vds (Vgs  Vt )
I   Cox ( )*(Vgs 
2
 Vt )Vds 1 W
L 2 I  k ( )*
L 2
W Vds 
I  k ( )*(Vgs 
1
 Vt )Vds I (Vgs  Vt )2
L 2 2
W
where   k 1
L
nMOS I-V Summary
 first order transistor models


 0 Vgs  Vt cutoff

  Vds V V  V
I ds    Vgs  Vt   ds linear
 2 
ds dsat

 
Vgs  Vt 
2
 Vds  Vdsat saturation
2
pMOS I-V Summary
 first order transistor models


 0 Vgs  Vt cutoff

  V V V  V
I ds    Vgs  Vt  ds  ds linear
 2 
ds dsat

 
Vgs  Vt 
2
 Vds  Vdsat saturation
2
Questions
Find out the region of the mos transistor?

Cut-off Deep linear / closer to


saturation

It is a wrong More/highly
representation saturated

VGS=2.5V, VDS=2.3V,
VT = 0.7V and VSB=0V
Saturation:

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